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31.
Wenlin HE Qishan ZANG+ Zhongguang WANG State Key Laboratory for Fatigue Fracture of Materials 《材料科学技术学报》1993,9(2):107-110
The distributions of plastic strain near grain boundaries induced by fatigue loading were investigatedby the fiducial grid method in pure aluminum specimens, and the resulted grain boundary sliding(GBS) was systematically analysed. The results show that the strain field near a grain boundary isnonuniform. GBS is restricted by the junction of grain boundaries and causes discontinuities of bothdisplacement and strain. A peak value of shear strain was created in short-range area across the grainboundary. GBS plays an important role in cyclic softening and secondary hardening. The control fac-tor of GBS is the relative orientation between two grains and the macro orientation of the grainboundary rather than the ∑ value of the boundary. 相似文献
32.
F. Baldoni 《Journal of Engineering Mathematics》1996,30(6):647-659
The mechanism of surface diffusion is taken at the basis of the phenomenon of slippage of the contact line of a liquid film. With the aid of the condition of continuity of the traction vectors at the solid-liquid interface, we obtained an evolution equation for the velocity of the fluid particles at the wall which shows a marked resemblance with Millikan's equation for the slippage coefficient of gases and reduces, in the limit of small surface diffusivity, to the classical Stokes-Einstein model. The influence of surface roughness is explicitely taken into account and, among other results, cases of absence of slip caused by the attachment of the liquid film to the solid surface and of slippage solely induced by surface roughness are found. Finally, the effect of the surface deformation upon the surface velocity of the fluid particles is examined in some detail. 相似文献
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Rotating-bending uniaxial fatigue tests and micro-fatigue crack initiation tests were carried out using a permanent mold cast
(PMC) and semi-solid die cast (SDC) with Al−7%Si−0.35%Mg composition in order to examine the relationship between solidification
structures and fatigue behaviors. The crack length was measured using a replication method. Fatigue strength was improved
in SDC, which was almost consistent with the predicted fatigue strength using the size of Si particle cluster. Resistance
to fatigue crack initiation and fatigue strength were improved in SDC owing to the finer Si cluster and to higher ultimate
tensile strength. Fatigue crack in PMC was preferentially initiated at pores. For SDC, the fatigue crack was initiated at
the Si particle/matrix interface, and then sucessively grew along eutectic cell boundaries. 相似文献
37.
The requirements on an object-oriented DBMS for management of information in a large, complex enterprise are presented. These requirements aid in the achievement of an environment characterized by data sharing, open architectures, application and data portability, and assurance of data integrity. They were defined from the point of view of a user of the DBMS; therefore they describe the expected functionality of the DBMS and do not specify the method of implementation to achieve this functionality. They encompass requirements on the data model, query and data manipulation languages, the system architecure, interfaces to the system, change management, and transaction management. 相似文献
38.
在不同频率流量和阻水程度条件下,采用一维明渠非恒定流网河数学模型,分析规划中的佛山市桥梁群对区间河道洪季行洪、枯季水环境的影响,计算洪季不同频率洪峰流量下规划桥梁群对区间河道行洪洪水位、分流比的影响,枯季时规划桥梁群对区间河道过流量、分流比的影响,结果表明,利用一维网河数学模型计算佛山市中心组团规划桥梁群对区间河道断面平均水位、流量和流速的影响,结果有足够的数值精度,是可信的。 相似文献
39.
天然河流的横断面多为由主槽和漫滩组成的复式断面,水流在这种断面中比在单一断面中受到更多因素影响,流态也更加复杂。通过将明渠横断面上微元体在水流方向的N-S控制方程沿水深积分,得出描述垂线平均流速和边界剪切应力横向分布的模型,并通过对实验数据的验证,确定了模型的实用性。 相似文献
40.
I.H. Song 《Thin solid films》2007,515(19):7598-7602
This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower. 相似文献