膜分离法回收合成氨弛放气中氢气

介绍了膜分离的原理和应用。实践表明该方法具有效率高、流程简单、操作灵活容易、纯度高和收率高等优点。     

硫酸铵-氯化亚锡-孔雀绿体系浮选分离铂

研究了在盐酸介质中硫酸铵存在下氯化亚锡—孔雀绿—水体系浮选分离铂的方法。在最佳实验条件下，铂的浮选率可达100．0％，并与常见贱金属完全分离。     

某难选铅锌矿石浮选分离新工艺试验研究

针对某难选铅锌矿的矿石性质，进行了较为系统的小型试验研究。结果表明：在铅循环中采用Bx SN—9^#组合捕收剂、石灰 ZL—01组合抑制剂，在锌循环中采用捕收剂磁处理浮选技术等措施，可以较好地解决该难选矿的浮选分离问题。     

电分标准工作曲线的推导与实践研究

本文根据人眼视觉特性、孟塞尔方程及彩色复制理论,并结合实际工艺路线和工艺条件,推导出标准阶调复制曲线和标准电分工作曲线。它与德国Hell公司所绘的电分标准工作曲线基本一致。并做到了各工序有数据,有质量标准,使平印制版做到有规可循。     

循环流液相等电聚焦方法及应用研究

利用循环流液相等电聚焦技术，对Ｈｂ、Ｃｙｔ．Ｃ和ＢＳＡ混合物进行分离，对ＲＮａｓｅＡ粗制品进行精制。该方法上样量大，活性回收好。对聚焦过程中扩散、对流和电渗的影响进行了讨论。     

Influence of two-step process and of different stoichiometric ratios on morphologies generated in castor oil epoxy resins

Phase separation during polymerization was studied in a model system consisting of a diepoxide based on diglycidyl ether of bisphenol A (DGEBA), variable amounts of ethylenediamine (EDA) and the mass of castor oil (CO) necessary to obtain a mass fraction equal to 0-15 in a final system where the stoichiometric ratio of amine to epoxy equivalents, r, was equal to 1. A two-step polymerization process was performed by curing first a system with r = 0-5, during variable times before phase separation, and then carrying the system to r = 1. Thermodynamic analysis of samples with different r values led to a linear relationship between the Flory-Huggins interaction parameter and r. The concentration (P) and average size (D?) of dispersed-phase particles followed opposite trends, i.e. P increased while D? decreased, when either r was increased or the time of curing in the first step of a two-step process was decreased. This was explained by assuming that the competition between nucleation and growth was determined by the viscosity at the cloud point, η_cp. Low values of η_cp favoured growth over nucleation and led to fewer but larger particles.     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

松香及其衍生物在浮选分离中的应用

介绍了松香的来源、化学组成及理化性质；讨论了松香及其衍生物在非硫化物矿浮选分离、有色金属离子的浮选分离以及从水溶液中浮选分离有机物等方面的应用情况。     

A new approach to the mechanism of chlorine evolution: Separate examination of the kinetic steps using ac impedance on a rotating thin ring electrode

In the absence of a bulk diffusion effect, it is shown for the first time that the impedance spectra for the chlorine evolution reaction on a rotating thin ring electrode comprise three consecutive semicircles in the capacitive half of the complex plane. The first (highest frequency) semicircle is due to the charge-transfer resistance for chloride discharge and the simultaneous chlorine adsorption coupled to the double-layer capacitance. The second semicircle (around 5 Hz) is due to the adsorption and desorption of a chlorine intermediate. The third (lowest frequency, around 0.5 Hz) semicircle is due to the relaxation of surface oxygen species. The impedance data allow the steps of the overall reaction to be examined individually. On a Pt surface the rate of chloride discharge and simultaneous chlorine adsorption (the admittance of the first semicircle) is first order with respect to chloride concentration and has a potential-dependence close to 58 mV/decade. The rate of the adsorption and desorption process (the admittance of the second semicircle) is second order with respect to chloride concentration, and has a potential dependence close to 30 mV/decade. The time constant for the adsorption/desorption processes is ca 20 ms, independent of electrode potential in the range studied. These features are consistent with a mechanism in which a faster discharge reaction (Cl⁻ Cl_ad + e) is followed by a slower surface combination reaction (2Cl_ad → Cl₂), but inconsistent with mechanisms in which ion + atom desorption is predominant, the initial chloride discharge is slow, or a unipositively charged chlorine species is involved.