大功率LED路灯散热器自然对流的数值研究

采用CFD软件对常规型大功率LED路灯散热器建立了三维数值模型,在大空间中进行了耦合数值传热计算,并用实验验证了数值计算的可靠性。研究了自然对流散热过程中散热器的温度场和周围扰流空气的速度矢量场分布。针对散热器散热过程中,扰流空气不能进入散热器肋片中间让肋片充分发挥自然对流冷却效果,提出了一种新的结构设计,通过数值计算得到了较理想的结构。在同等功率下散热器基板底面最高温度比原模型低了5℃,肋片平均换热系数提高了17.6%,显著提高了大功率LED路灯散热器的散热能力。     

Ku波段宽带大功率多芯片合成设计

设计针对多个Ku波段宽带MMIC功率放大芯片进行大功率合成.对波导多路功率合成结构进行了分析,基于单个Ku波段6W功放单片,进行了16路的功率合成,研制出了工作在12～17 GHz,带宽达到6 GHz的固态功率放大器.通过测试发现该固态功率放大器的输出功率≥70 W,功率增益≥15 dB,工作电压48 V,效率≥16％...     

高功耗抗恶劣环境计算机散热研究

以某高功耗军用加固计算机热设计为实例,介绍了热设计过程中,加固计算机主板芯片到风道这一传导路径热阻计算的具体方法,对比了军用加固计算机采用单、双风道各自的传导热阻.并用IcePak热分析软件对采用单、双风道的加固计算机主板温度分布进行了仿真计算,通过实践证明了双风道散热形式在高功耗加固计算机中的可实施性和优越性.     

Potential of asymmetrical Si/Ge and Ge/Si based hetero-junction transit time devices over homo-junction counterparts for generation of high power

Static and dynamic properties of both complementary n-Ge/p-Si and p-Ge/n-Si hetero-junction Double-Drift IMPATT diodes have been investigated by an advanced and realistic computer simulation technique, developed by the authors, for operation in the Ka-, V- and W-band frequencies. The results are further compared with corresponding Si and Ge homo-junction devices. The study shows high values of device efficiency, such as 23%, 22% and 21.5%, for n-Ge/p-Si IMPATTs at the Ka, V and W bands, respectively. The peak device negative conductances for n-Si/p-Ge and n-Ge/p-Si hetero-junction devices found to be 50.7 ? 10⁶ S/m² and 71.3 ? 10⁶ S/m², which are ～3-4 times better than their Si and Ge counterparts at the V-band. The computed values of RF power-density for n-Ge/p-Si hetero-junction IMPATTs are 1.0 ? 10⁹, 1.1 ? 10⁹ and 1.4 ? 10⁹ W/m², respectively, for Ka-, V- and W-band operation, which can be observed to be the highest when compared with Si, Ge and n-Si/p-Ge devices. Both of the hetero-junctions, especially the n-Ge/p-Si hetero-junction diode, can thus become a superior RF-power generator over a wide range of frequencies. The present study will help the device engineers to choose a suitable material pair for the development of high-power MM-wave IMPATT for applications in the civil and defense-related arena.     

808nm波长锁定大功率半导体激光器列阵

大功率半导体激光器列阵(DLA)具有功率高、电光转换效率高、可靠性强、寿命长、体积小及成本低等诸多优点,但其波长随温度变化较大,光谱线宽较宽,这些缺点直接限制了其实际应用.为了解决此问题,采用体布拉格光栅(VBG)构成波长锁定大功率半导体激光器系统.体布拉格光栅可以把波长锁定,同时把光谱线宽压窄,从而有效改善了DLA波...     

高功率光纤激光器及其在战术激光武器中的应用

作为目前世界上最先进的固体激光器——光纤激光器具有无以伦比的独特优势,它已广泛应用于战术激光武器。本文评述和分析了高功率光纤激光器的特点、最新进展,光束合成技术和光学相控阵,以及它们在战术激光武器中的应用。Abstract：     

Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source: a generalized large-signal analysis

A full-scale, self-consistent, non-linear, large-signal model of double-drift hetero-structure IMPATT diode with general doping profile is derived. This newly developed model, for the first time, has been used to analyze the large-signal characteristics of hexagonal SiC-based double-drift IMPATT diode. Considering the fabrication feasibility, the authors have studied the large-signal characteristics of Si/SiC-based hetero-structure devices. Under small-voltage modulation (～ 2%, i.e. small-signal conditions) results are in good agreement with calculations done using a linearised small-signal model. The large-signal values of the diode's negative conductance (5 × 10⁶S/m²), susceptance (10.4 × 10⁷ S/m^2}), average breakdown voltage (207.6 V), and power generating efficiency (15%, RF power: 25.0 W at 94 GHz) are obtained as a function of oscillation amplitude (50% of DC breakdown voltage) for a fixed average current density. The large-signal calculations exhibit power and efficiency saturation for large-signal (> 50%) voltage modulation and thereafter decrease gradually with further increasing voltage-modulation. This generalized large-signal formulation is applicable for all types of IMPATT structures with distributed and narrow avalanche zones. The simulator is made more realistic by incorporating the space-charge effects, realistic field and temperature dependent material parameters in Si and SiC. The electric field snap-shots and the large-signal impedance and admittance of the diode with current excitation are expressed in closed loop form. This study will act as a guide for researchers to fabricate a high-power Si/SiC-based IMPATT for possible application in high-power MM-wave communication systems.     

大功率LED驱动电路研究设计

根据大功率LED的供能要求,从EMI滤波、功率因素校正、半桥谐振转换三个方面着手,以FAN6961和FSFR2100为控制芯片,设计了一款大功率的高效率LED驱动电路,在90～264VAC的线路输入和满载下,功率因数高于93%,效率高于85%,并具有低输入电流谐波失真和低EMI.     

Design and Simulation of High-power LED Array Packaging

Thermal management is one of the key technologies for high-power Light emitting diode（LED） entering into the general illuminating field. Successful thermal management depends on optimal packaging structure and selected packaging materials. In this paper, the aluminum is employed as a substrate of LED, 3×3 array chips are placed on the substrate, heat dissipation performance is simulated using finite element analysis（FEA） software, analyzed are the influences on the temperature of the chip with different convection coefficient, and optical properties are simulated using optical analysis software. The results show that the packaging structure can not only effectually improve the thermal performance of high-power LED array but also increase the light extraction efficiency.     

基于阴影的激光深熔焊熔池形态分析

熔池形态特别是熔池体积使用现有测量手段难以直接进行测量.采用大功率盘形激光对304型不锈钢厚板进行平板堆焊,通过外加辅助强红外激光光源投射熔池阴影,采用高速摄像机加装组合滤光片摄取清晰地熔池及其阴影动态图像,提取焊接过程中熔池投射阴影的面积变化,并进行一元线性回归和相关性分析.结果表明,熔池的阴影面积变化与焊接质量存在正相关性,为焊接质量检测提供了新方法.