匀相沉淀法制备NiO纳米粒子及磁性研究

以Ni（N03）2·6H20和CO（NH2）2为原料,采用均相沉淀法制备尺寸为39．3nm的NiO粒子;以热重分析仪确定了前驱体的分解温度,X射线衍射仪、透射电镜等分析方法表征了产物的结构及形貌;利用振动样品磁强计对产物的磁性质进行了分析,磁滞回线显示：5K时产物具有铁磁性行为,矫顽力HC=899Oe;讨论了反应原料摩尔比、反应温度、反应时间等因素对制备NiO粒子粒径的影响,得到了优化实验条件：反应原料摩尔比（C／N）为5,反应温度为85℃,反应时间为4h,在此条件下,NiO收率达84％。     

衬底温度对NiO:Cu/ZnO异质pn结的光电性能影响

利用磁控溅射方法改变衬底温度,制备了一系列Ni O:Cu/ZnO异质pn结。实验结果表明,当衬底温 度从室温升高到300℃时,NiO:Cu/ZnO异质pn结的整流特性明显得到 改善;与此同时,NiO:Cu/ZnO异质 pn结的光学透过率也从40%增大到80%。这可能是由于NiO:Cu薄膜结晶质量改善,薄膜内 缺陷减少所致。 继续增加衬底温度至400℃,异质结的整流特性有所削弱,这可能是 由于生长在异质结下层 的NiO:Cu薄膜影响了其上ZnO薄膜的生长,进而影响到异质结的整流特性。这一结论,得到 X射线衍射(XRD)、原子力显微镜(AFM)和紫外(UV)谱测试结果的支持。     

Preparation and characterization of nanostructured NiO thin films by reactive-pulsed laser ablation technique

Nanostructured nickel oxide (NiO) thin films were prepared using pulsed laser ablation technique on heated quartz substrates under an oxygen partial pressure of 2×10⁻³ mbar. X-ray diffraction (XRD) studies indicate enhancement in growth along (1 1 1) and (2 0 0) crystal planes with increase of substrate temperature. The atomic force microscopic (AFM) studies indicate a self-assembly of NiO nanocrystals having size 84 nm, with a uniform height profile along the assembly for films prepared at a substrate temperature of 673 K. Formation of arrays of confined two-dimensional NiO layers in the films prepared at a substrate temperature of 473 K is also reported. The optical band gap and electrical resistivity of the films synthesized under different deposition conditions are also discussed.     

核壳结构氧化镍/碳微球的制备及葡萄糖传感性能

以碳球为模板, 六水合氯化镍和尿素为原料, 通过水热反应制备前驱体Ni(OH)₂/C, 在高纯氮气中煅烧获得核壳结构的NiO/C微球。采用扫描电镜(SEM)、X射线衍射(XRD)、X射线光谱(EDX)和热重分析(TGA)等技术手段, 分析NiO/C微球的形貌结构以及物相组成, 结果表明: NiO/C微球直径约1.4 μm, 由厚度为50 nm的纳米片包覆碳球形成花状核壳结构, NiO呈立方相。通过循环伏安法和计时电流法研究了NiO/C微球的电化学行为及葡萄糖传感能力。与单纯NiO相比, NiO/C具有优异的葡萄糖传感性能, 其灵敏度为31.37 mA/(mmol·L^-1·cm²)线性响应范围为2~1279 μmol/L, 最低检测限为2 μmol/L。该传感器具有灵敏度高、抗干扰能力强和稳定性好等特点。     

Y2O3掺杂对17Ni/(NiFe2O4-10NiO)金属陶瓷高温氧化性能的影响

氩气气氛保护下采用气压烧结技术制备掺杂Y2O3的17Ni/(NiFe2O4-10NiO)金属陶瓷惰性阳极,在电解温度(960℃)下,对材料进行抗高温氧化性能研究.采用SEM分析材料及氧化产物的各物相分布情况、氧化形貌,并利用XRD进行成分分析.结果表明,金属陶瓷阳极的氧化动力曲线均大致符合抛物线规律;掺杂适量的Y2 O3对金属相的分散有一定作用,并能有效抑制烧结试样及氧化物的孔洞生成,从而显著改善该金属陶瓷的抗高温氧化性能,其中,当Y2 O3掺杂量为0.5％时,材料抗高温氧化性能最好,30 h后单位面积氧化增重量仅为10.6591 mg/cm2.     

NASICON基NO_2气体传感器

文中介绍了一种管式结构的固体电解质NO_2气体传感器.该传感器是用溶胶–凝胶法制备的NASICON(钠离子导体) 为导电层材料,利用化学沉淀法制备的NiO和贵金属Au作为敏感电极材料制得的.文中研究了不同敏感电极材料对气体传感器性能的影响.以NiO+Au 作为敏感电极材料的传感器具有较大的灵敏度,当工作温度在300 ℃时,对浓度为(5～200)×10-6的NO_2表现出了良好的气敏性能,传感器的灵敏度大于70 mV/decade.     

Sol-gel synthesis of nickel oxide thin films and their characterization

Sol-gel method has been employed for the synthesis of nanocrystalline nickel oxide (NiO). The NiO powders were sintered at 400-700 °C for 1 h in an air. Thin films of sintered powders were prepared on glass substrate using spin coating technique and changes in the structural, morphological, electrical and optical properties were studied. The structural and microstructural properties of nickel oxide films were studied by means of X-ray diffraction and field emission scanning electron microscopy. Structural analysis shows that all the films are crystallized in the cubic phase and present a random orientation. Surface morphology of the nickel oxide film consists of nanocrystalline grains with uniform coverage of the substrate surface with randomly oriented morphology. The electrical conductivity showed the semiconducting nature with room temperature electrical conductivity increased from 10^− 4 to 10^− 2 (Ω cm) ^− 1 after sintering. The electron carrier concentration (n) and mobility (μ) of NiO films annealed at 400-700 °C were estimated to be of the order of 1.30 to 3.75 × 10¹⁹ cm^− 3 and 1.98 to 4.20 × 10^− 5 cm² V^− 1 s^− 1.The decrease in the band gap energy from 3.86 to 3.47 eV was observed for NiO sintered between 400 and 700 °C. These mean that the optical quality of NiO films is improved by sintering.     

Optical properties of NiO thin films fabricated by electron beam evaporation

Nickel oxide (NiO) thin films were deposited onto quartz substrates by the electron beam deposition technique, and obtained high crystal quality after annealing at 1173 K. The structural and microstructural properties of the films were studied by X-ray diffraction (XRD) and atomic force microscope (AFM), respectively. We focus on the optical characterization of the films, indicating the enhancement of the crystal quality, which was confirmed by the photoluminescence and Raman spectrum. Furthermore, PL studies exhibited room temperature emission at 377 nm, and also shown high ultraviolet/visible rejection ratio (>100).     

Hydrothermal method to prepare porous NiO nanosheet

Porous NiO nanosheet has been synthesized by hydrothermal method, using Ni(NO₃)₂·6H₂O and urea as the raw materials and DI water as solvent, then followed by calcination process. It has been indicated by TEM and BET analysis that the as-prepared NiO was porous nanosheet. With the increase of annealing temperature, the pore size on the nanosheet becomes larger and the specific surface area becomes much smaller. All isotherms of NiO display type IV with H3 type hysteresis loop with pore size distribution of 2-60 nm. The annealing temperature turns out to be the key factor to pore size, pore distribution and pore volume.     

用脉冲电沉积法制备两类纳米介孔氧化镍电致变色薄膜的研究

采用脉冲电沉积技术在ITO导电玻璃上制备了NiO电致变色薄膜,并用X射线衍射仪、扫描电镜和能谱仪分析薄膜的结构、形貌和成份,用紫外-可见光分光光度计测试薄膜的光学性能,用循环伏安法测试薄膜的电化学性能,对比研究了Co掺杂对NiO薄膜电致变色性能的影响。结果表明Co掺杂优化了NiO薄膜表面形貌,形成了均匀分布的纳米介孔微结构,从而提高了薄膜电化学活性,同时提高了薄膜的光调制幅度。