Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs

The suitability of the semiconductor-device modeling program PC-1D for high-accuracy simulation of silicon photodiodes is discussed. A set of user interface programs optimized to support high-accuracy batch-mode operation of PC-1D for modeling the internal quantum efficiency of photodiodes is also described. The optimization includes correction for the dark current under reverse- and forward-bias conditions before calculating the quantum efficiency, and easy access to the highest numerical accuracy available from PC-1D, neither of which is conveniently available with PC-1D 19;s standard user interface.     

A formal model of asynchronous communication and its use in mechanically verifying a biphase mark protocol

We present a formal model of asynchronous communication between two digital hardware devices. The model takes the form of a function in the Boyer-Moore logic. The function transforms the signal stream generated by one processor into that consumed by an independently clocked processor, given the phases and rates of the two clocks and the communications delay. The model can be used quantitatively to derive concrete performance bounds on communications at ISO protocol level 1 (physical level). We use the model to show that an 18-bit/cell biphase mark protocol reliably sends messages of arbitrary length between two processors provided the ratio of the clock rates is within 5% of unity.     

二(二甲苯基)丙烷合成工艺的研究

二氯丙烷(DCP)与二甲苯在混合金属氯化物催化剂(HD90)作用下合成二(二甲苯基)丙烷,生产过程简单,产品收率高。在60—80℃的温度下,二甲苯与二氯丙烷摩尔比为6∶1,HD用量50克/摩尔DCP的条件下反应5—6小时,二(二甲苯基)丙烷的收率可达88％以上。     

推广的Kantorovi多项式的L_p保持Lipschitz条件性

本文研究推广的Kantorovi多项式P_n~*(f, x)在L_p[0,1]空间中的保持Lipschitz条件性质。     

Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy

The defect engineering in metalorganic vapor phase epitaxy In_xGa_1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in In_xGa_1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on a series of In_xGa_1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction band and led to a high electron concentration in oxygen doped In_0.53Ga_0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels.     

超低膨胀陶瓷K_（2x）Ba_（1－x）Zr_4（PO_4）_6系统的X射线衍射

用高温Ｘ射线衍射方法对磷酸锆钡钾系统陶瓷材料的各向异性热膨胀作了研究．对七个组份试样的７７套高温Ｘ射线衍射图作了仔细的指标化和精密点阵常数测定．点阵常数随温度作非线性变化·对Ｋ_２ｘＢａ_１－ｘＺｒ_４（ＰＯ_４）_６的不同组份不同温度（３００～１３００Ｋ）的热膨胀系数。α_ａ、α_ｃ、　作了测定·该系统零膨胀陶瓷的组份为Ｋ_１．１６Ｂａ_０．４２Ｚｒ_４（ＰＯ_４）_６（ｘ＝０．５８）     

COIL中BHP浓度对发生O_2(~1△)的影响

本文实验研究了BHP的浓度对产生O2（1△）的影响。实验结果表明：当BHP浓度大于3.5M时，Cl2利用率以及O2（1△）的产率将不依赖于BHP浓度的变化而变化，同时，实验结果表明，使用低浓度的BHP对COIL的操作是可行的。     

稠油油藏的注汽量预测

利用HCZ预测模型，可对已开发油田的年产量和累计产量进行全程预测，并且在实际应用中取得了较好的预测结果。本文结合稠油田的实际情况，推导出HXZ预测模型在热采中注汽参数的预测公式。结合曙光油田曙1－7－5块的开发数据进行了预测，效果较好。