Properties of fluorine-doped SnO2 thin films by a green sol–gel method

Fluorine doped tin oxide (FTO) films were fabricated on a glass substrate by a green sol–gel dip-coating process. Non-toxic SnF₂ was used as fluorine source to replace toxic HF or NH₄F. Effect of SnF₂ content, 0–10 mol%, on structure, electrical resistivity, and optical transmittance of the films were investigated using X-ray diffraction, Hall effect measurements, and UV–vis spectra. Structural analysis revealed that the films are polycrystalline with a tetragonal crystal structure. Grain size varies from 43 to 21 nm with increasing fluorine concentration, which in fact critically impacts resultant electrical and optical properties. The 500 °C-annealed FTO film containing 6 mol% SnF₂ shows the lowest electrical resistivity 7.0×10⁻⁴ Ω cm, carrier concentration 1.1×10²¹ cm⁻³, Hall mobility 8.1 cm²V⁻¹ s⁻¹, optical transmittance 90.1% and optical band-gap 3.91 eV. The 6 mol% SnF₂ added film has the highest figure of merit 2.43×10⁻² Ω⁻¹ which is four times higher than that of un-doped FTO films. Because of the promising electrical and optical properties, F-doped thin films prepared by this green process are well-suited for use in all aspects of transparent conducting oxide.     

Photoelectrolytic hydrogen production using Bi2MNbO7 (M = Al, Ga) semiconductor film electrodes prepared by dip-coating

The performance of Bi₂MNbO₇ (M = Al, Ga) films on AISI/SAE 304 stainless steel was evaluated in the photoelectrochemical hydrogen production as a function of the annealing temperature of the films (400, 500 and 600 °C) and the composition of the electrolyte solution (containing KOH, KCN and KCl). The films were prepared by sol-gel dip-coating on AISI/SAE 304 stainless steel followed by a thermal annealing. The photoelectrochemical evaluation (UV-Vis, 2.5 V) was carried out in a conventional two-compartment electrochemical cell by using the prepared films as photoanode and a silver plate as cathode. During the process, circulating current was recorded and hydrogen production and cyanide degradation were measured. In both cases, it was found that the higher activity was obtained with the films annealed at 500 °C and using an electrolyte solution 0.3 M of KOH and 120 ppm of CN⁻. Further works on the subject should involve a cathode evaluation to avoid the electrode polarization in presence of KCl and an experimental design to optimize the evaluated variables.     

丙纶织物涂层整理的研究

本文研究了以天然胶乳为涂层剂、多硫化物为交联剂的胶乳体系在丙纶织物上的涂层加工工艺 ,采用浸渍涂层工艺流程 ,交联剂占天然胶乳的 5%时 ,涂层烘燥温度为 1 0 5℃ ,烘燥时间为 1 0min时得到较好的丙纶篷布的涂层效果。     

Surface morphologies and properties of pure and antimony-doped tin oxide films derived by sol–gel dip-coating processing

A simple laboratory technique for the routine preparation of antimony-doped tin oxide (ATO) on float glass substrates (25 mm × 76 mm × 1 mm) was described. As-prepared thin films were dried at temperature of 100 ± 5 °C and annealed at temperatures of 400–550 °C. Microstructural and morphological analyses of as-prepared films were performed at different conditions. The evolution of grain size and the morphologies of ATO films were analyzed by means of atom force microscopy (AFM) and digital microscope. The studies suggested that higher Sb-doped level and higher annealing temperature led to a decrease in the surface roughness of the deposited films. The XRD patterns revealed that as-prepared ATO films were in the crystallization of a tetragonal rutile structure of SnO₂ with highly (1 1 0) preferred orientation. Their optical properties were analyzed by U-3310 spectrophotometer. The transmission of the ATO thin films was obtained as high as 80–90% in visible region, but decreased substantially in IR region. The sheet resistance of the investigated thin films was determined by four-probe method, showing that it was about 85–100 Ω □⁻¹which decreased with the increase of antimony-doped concentration.     

银线表面浸涂法制备Bi2Sr2Ca1Cu2Ox超导膜

通过浸涂法在银圆线表面制备了Bi2Sr2Ca1Cu2Ox(Bi-2212)超导厚膜.在热处理过程中,局部熔化温度和固相烧结温度对Bi-2212相的形成起关键作用.表面涂覆的直径为0.5 mm银线在液氮温度、0 T磁场下临界电流密度可达10 000 A/cm2.系统研究了在不同氧分压下,经不同温度退火处理后样品的临界温度Tc值,结果表明:最优退火温度为760℃,样品的Tc值为96.98 K,氧分压越高,样品的Tc值越大.此外,Bi-2212材料在空气中放置具有时间效应,会对Tc产生影响.     

Preparation and Corrosion Resistance of Rare Earth Ceramic Film on AZ91 Magnesium Alloy

With the purpose of improving corrosion resistance and solving environmental pollution caused by traditional protective technique, rare earth ceramic film on AZ91 magnesium alloy was prepared by dip coating process, and technical parameters of preparation were defmed. Microstructure and composition of the film were studied and corrosion resistance was evaluated as well. The results show that rare earth ceramic film is uniform,dense, with strong cohesion and intact coverage. The film is mainly made up of CeO2 and MgCeO3. The results of corrosion experiments approve that the film acts as a barrier to isolate the contact of the substrate with corrosion media and decreas corrosion rate. Polarization curve of the coated sample shiftes to positive potential obvito 2.7 × 104 Ω. These facts indicate that rare earth ceramic film could effectively improve corrosion resistance of AZ91 magnesium alloy.     

陶瓷湿膜形成机理及增厚动力学

讨论了在用浸浆法制备非对称α-Al2O3微滤膜过程中陶瓷湿膜在多孔支撑体上的形成机理,建立了湿膜增厚动力学模型.根据该模型,可以定量地预计在不同浸涂时间内湿膜的厚度,从而为膜厚的有效控制提供了理论根据.由模型计算的结果与α-Al2O3微滤膜的实验数据符合得很好.     

聚丙烯腈炭-炭气体分离复合膜的制备

以聚丙烯腈(PAN)为前驱体采用浸渍涂膜法在煤基炭管支撑体上制备出聚丙烯腈炭-炭复合膜,考察了涂膜液浓度,浸涂和干燥条件以及涂膜次数对聚丙烯腈炭-炭复合膜性能的影响.结果表明,涂膜液浓度、干燥条件以及涂膜次数对炭-炭复合膜性能的影响显著.随着涂膜液浓度的增大,炭-炭复合膜的平均孔径和气体通量均呈现先减后增的趋势.升高干燥温度和延长干燥时间,使炭-炭复合膜平均孔径减小,但当达到一定程度时变化不明显.增加涂膜次数使炭-炭复合膜平均孔径减小,但过多的涂膜次数会使膜层在炭化后产生裂纹和剥落现象.通过调整实验参数制备出了复合效果较好,表面光滑无缺陷的聚丙烯腈炭-炭复合膜.     

浸渍-提拉法制备 PS胶晶模板及有序 ZnO多孔薄膜

采用浸渍-提拉法制备聚苯乙烯微球(PS)模板,以醋酸锌(Zn(CH3COO)2·2H2O)、二乙醇胺(NH(C2H2OH)2)、乙醇和水等配制的前驱体溶胶填充PS模板间隙,经过干燥过程原位形成凝胶,最后通过煅烧除去PS微球模板得到有序规则排列的多孔ZnO薄膜。重点讨论了模板在溶胶中的浸渍时间、溶胶的浓度对有序多孔结构形成的影响．通过TG-DTA分析、 XRD、TEM、SEM、IR反射光谱和UV-VIS光谱对结构和性能进行了表征．结果表明, 用无皂聚合制备的PS直径约为400nm,IR反射光谱布拉格反射测定PS模板为fcc结构,平行于基底的密排面为(111),ZnO由无定形向纤锌矿转变温度是460℃,多孔薄膜的孔径约为 280nm,孔壁由晶粒直径约46nm的ZnO粒子构成,．透光率为60％,禁带宽度Eg约为3．24eV．     

溶胶-凝胶提拉法制备ZnO薄膜及其性能研究

采用溶胶-凝胶提拉法在石英玻璃衬底上生长了ZnO薄膜.对薄膜的XRD分析表明ZnO薄膜为纤锌矿结构并沿c轴择优取向生长.透射光谱表明薄膜的禁带宽度为3.28eV,与ZnO体材料的禁带宽度3.30eV基本相同.用荧光光谱分析了经过400～600℃热处理获得的ZnO薄膜,结果表明ZnO薄膜在室温下可获得较强的紫外带边发射.适当选择热处理温度可以获得无可见波段发射的ZnO薄膜.