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正A fully integrated multi-mode multi-band directed-conversion radio frequency(RF) receiver front-end for a TD-SCDMA/LTE/LTE-advanced is presented.The front-end employs direct-conversion design,and consists of two differential tunable low noise amplifiers(LNA),a quadrature mixer,and two intermediate frequency(IF) amplifiers.The two independent tunable LNAs are used to cover all the four frequency bands,achieving sufficient low noise and high gain performance with low power consumption.Switched capacitor arrays perform a resonant frequency point calibration for the LNAs.The two LNAs are combined at the driver stage of the mixer,which employs a folded double balanced Gilbert structure,and utilizes PMOS transistors as local oscillator(LO) switches to reduce flicker noise.The front-end has three gain modes to obtain a higher dynamic range.Frequency band selection and mode of configuration is realized by an on-chip serial peripheral interface(SPI) module.The frontend is fabricated in a TSMC 0.18-μm RF CMOS process and occupies an area of 1.3 mm~2.The measured doublesideband (DSB) noise figure is below 3.5 dB and the conversion gain is over 43 dB at all of the frequency bands. The total current consumption is 31 mA from a 1.8-V supply. 相似文献
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正A radio frequency(RF) receiver frontend for single-carrier ultra-wideband(SC-UWB) is presented. The front end employs direct-conversion architecture,and consists of a differential low noise amplifier(LNA),a quadrature mixer,and two intermediate frequency(IF) amplifiers.The proposed LNA employs source inductively degenerated topology.First,the expression of input impedance matching bandwidth in terms of gate-source capacitance, resonant frequency and target S_(11) is given.Then,a noise figure optimization strategy under gain and power constraints is proposed,with consideration of the integrated gate inductor,the bond-wire inductance,and its variation.The LNA utilizes two stages with different resonant frequencies to acquire flat gain over the 7.1-8.1 GHz frequency band,and has two gain modes to obtain a higher receiver dynamic range.The mixer uses a double balanced Gilbert structure.The front end is fabricated in a TSMC 0.18-/im RF CMOS process and occupies an area of 1.43 mm~2.In high and low gain modes,the measured maximum conversion gain are 42 dB and 22 dB,input 1 dB compression points are -40 dBm and -20 dBm,and S_(11) is better than -18 dB and -14.5 dB.The 3 dB IF bandwidth is more than 500 MHz.The double sideband noise figure is 4.7 dB in high gain mode.The total power consumption is 65 mW from a 1.8 V supply. 相似文献
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设计了一款新型的CT-SIM三维激光灯定位装置,通过精确的运动设计和高效控制电路设计,保证等中心点的标定精度达到0.1mm。整个装置具有结构简单、响应迅速、定位准确的优点。 相似文献
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