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41.
色散控制孤子系统的应用设计研究 总被引:2,自引:2,他引:0
对色散控制孤子(DMS)系统的设计展开研究,首次通过DMS系统的传输理论研究系统参数受限度,确定DMS传输系统的参数以及系统设计步骤,然后研究将DMS传输系统应用于一段实际的干线网络。作为优化设计DMS系统传输参数的例子,改建后的干线网的传输特性和眼图性能良好,基本上能得到理想的结果。为色散管理孤子方案应用于实际系统提供有价值的参考,为升级传统光纤线路,实现高速大容量传输提供有益的参考。 相似文献
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Volatile organic sulfide (VOS) causes of odors were studied at Philadelphia's Northeast Water Pollution Control Plant between September 11 and November 25, 2003. Results showed that dimethyl sulfide (DMS) dominated the VOS pool whenever VOS concentration rose above the background level (<50 microg/L). Methanethiol was generally less than 10% of VOS and it was mainly found at sites with limited or reduced dissolved oxygen (DO). Dimethyl disulfide occupied approximately 1% of the VOS and was often not detectable. Carbon disulfide was not detected. The concentrations of DMS varied by three orders of magnitude, ranging from <5 to 1260 microg/L. High concentrations of DMS, averaging 419 and ranging from <5 to 1000 microg/L, were generally found in return activated sludge. The DMS concentration in the primary effluent ranged from <5 to 729 microg/L and averaged 245 microg/L. Concentrations of DMS in the aeration tank (AT) with high DO were from <5 to 997 microg/L with an average of 250 microg/L. However, DMS concentrations in the AT representing anaerobic conditions were as high as 1260 microg/L. The estimated average purge efficiency of DMS was about 78%, which required a DMS production rate of 108 microg/Lh(-1) to keep the analyzed concentration in the AT. While a valid but weak statistical relationship between acetone and DMS was observed, there was no strong evidence to support that the methylation of hydrogen sulfide with acetone could be the mechanism for the DMS formation. Instead, DMS production was found to be associated with the characteristics of incoming wastewater. Thus, a VOS precursor was believed to be present in the incoming wastewater, which warranted a need for further investigation. 相似文献
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Zahra Pezeshki-Nejad Sima Alikhanzadeh-Arani Amir Ehsan Rezaee Mohammad Almasi Kashi 《Ceramics International》2019,45(6):6912-6924
While combining semiconductor and magnetic properties at the nanoscale provides dilute magnetic semiconductor (DMS) nanomaterials with a wide range of applications in next-generation electronic devices, tuning DMS properties still presents a challenge. Here, the synthesis of pure ZnO and transition metal (TM)-doped ZnO nanoparticles (NPs) with different magnetic (Fe and Co) and nonmagnetic (Mn) dopant concentrations (ranging from 2% to 10%) is reported using a co-precipitation method. Introducing the TM-dopants into ZnO NPs with 35?nm wurtzite structure causes crystallite and mean NP sizes to decrease, as characterized by X-ray diffraction and field-emission scanning electron microscopic analyses. Room-temperature magnetic measurements indicate coexistence of paramagnetic and ferromagnetic phases with tunability in the resulting TM-doped NPs. The maximum ferromagnetic coercivity and saturation magnetization are found to be 89?Oe and 0.074?emu/g for 10% Fe-doped ZnO NPs. UV–visible spectra showed a blue shift with increasing the dopant concentration, being in agreement with increasing trend in band gap energy calculated from band structure and density of state of TM-doped ZnO nanocrystal systems. 相似文献
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M. Li B. Zhang J.Z. Wang L.Q. Shi H.S. Cheng Y.Z. Wang H.Y. Lv T.Y. YangW. Wen F.C. Hu 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2011,269(21):2610-2613
Mn-doped ZnO films were prepared by radio frequency (RF) magnetron sputtering on sapphire substrate. Mn content was determined by proton induced X-ray emission (PIXE). Only Mn, no other magnetic impurities such as Fe, Co and Ni were observed. Also, no precipitates such as MnO, Mn3O4 and other secondary phases or Mn clusters, were found by SR-XRD, even in Mn-doped content up to 11 at.%. EXAFS analyses showed that Mn atoms were incorporated into ZnO crystal lattice by occupying the sites of zinc atoms. 相似文献
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Multilayer thin films of ZnSe/Mn diluted magnetic semiconductor have been physically deposited onto a glass substrate using thermal evaporation technique and vacuum annealed at 333 K for 1 h at base pressure of 10−5 Torr. These thin films have been hydrogenated at different pressures (15-45 psi) for half an hour at room temperature. Hydrogenation process has been performed for as- grown as well as annealed thin films and named as-grown hydrogenated and annealed hydrogenated DMS thin films respectively. Structural characteristics of as-grown and vacuum annealed thin films have been performed by X-ray diffractometer. Current-voltage measurement has been studied for both as- grown hydrogenated and annealed hydrogenated DMS thin films by Keithly electrometer. X-ray diffraction pattern has been revealed nanocrystalline single phase of cubic zinc blende structure of film. Due to the annealing the conductivity has been found to be increased indicating the mixing of multilayer whereas the conductivity for as-grown hydrogenated and annealed hydrogenated ZnSe/Mn DMS thin films was found to be reduced indicating the electronic passivation effect of hydrogenation. Raman spectra of as-grown and annealed hydrogenated samples have been taken to see the presence of hydrogen in these samples. Surface topography of as-grown and annealed multilayer thin films has been confirmed by optical microscopy. Surface topography of annealed hydrogenated samples clearly shows the effect of hydrogenation at the surface. 相似文献
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