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41.
设计并制备了一种基于忆阻器结构且具有可编程特性的Ge基光控晶体管,它由两个结构为Ni/Ge/GeOx/Al2O3∶HfO2/Pd的忆阻器背对背组成,共用阻变层GeOx/Al2O3∶HfO2、衬底Ge和底电极Ni,阻变层的设计是实现光控晶体管功能的关键。两个顶电极Pd作为光控晶体管源漏极,中间区域作为栅极接受外加光源的栅控。探究了Ge基忆阻器光电响应特性,并实现光控晶体管基于光源栅控的输出与转移特性。进一步地,探究了器件的物理机制并验证设计的科学性和可行性。该光控晶体管具有非易失性与标准CMOS工艺兼容性等优势,能有效简化器件制备工艺、降低制造成本,可为下一代光电芯片研发提供参考。 相似文献
42.
Usman Khan Yuting Luo Lei Tang Changjiu Teng Jiaman Liu Bilu Liu Hui‐Ming Cheng 《Advanced functional materials》2019,29(14)
Atomically thin 2D materials have received intense interest both scientifically and technologically. Bismuth oxyselenide (Bi2O2Se) is a semiconducting 2D material with high electron mobility and good stability, making it promising for high‐performance electronics and optoelectronics. Here, an ambient‐pressure vapor–solid (VS) deposition approach for the growth of millimeter‐size 2D Bi2O2Se single crystal domains with thicknesses down to one monolayer is reported. The VS‐grown 2D Bi2O2Se has good crystalline quality, chemical uniformity, and stoichiometry. Field‐effect transistors (FETs) are fabricated using this material and they show a small contact resistivity of 55.2 Ω cm measured by a transfer line method. Upon light irradiation, a phototransistor based on the Bi2O2Se FETs exhibits a maximum responsivity of 22 100 AW?1, which is a record among currently reported 2D semiconductors and approximately two orders of magnitude higher than monolayer MoS2. The Bi2O2Se phototransistor shows a gate tunable photodetectivity up to 3.4 × 1015 Jones and an on/off ratio up to ≈109, both of which are much higher than phototransistors based on other 2D materials reported so far. The results of this study indicate a method to grow large 2D Bi2O2Se single crystals that have great potential for use in optoelectronic applications. 相似文献
43.
对"四论注入光敏器件的物理基础"一文的商榷 总被引:1,自引:1,他引:0
利用受光PN 结伏安特性方程,分别对受光PN 结的光电流输出、注入电流输出和零电流输出三种情况进行了讨论,进一步对注入光敏器件的物理基础进行探讨,并对一些实验问题进行讨论。 相似文献