用强流脉冲离子束(HIPIB)方法在玻璃表面制备ITO膜

强流脉冲离子束(HIPIB)方法以新的成膜机理通过高强度(约108W/cm2),脉冲(约70ns)离子束照射到ITO陶瓷靶材上产生的高密度、高温二次等离子体快速地沉积到室温玻璃基片上成功地制得ITO薄膜。经一次脉冲发射即可制得约65nm厚的膜。通过原子力显微镜(AFM)图象分析膜的表面形貌,膜的平整性与膜厚有直接关系,一次沉积的膜的平整度良好。     

纳米碳管对MWPCVD过程增强金刚石形核的影响

利用石英钟罩式微波等离子体化学气相沉积（ＭＷＰＣＶＤ）实验装置,研究了硅基体表面沉积金刚石薄膜时纳米碳管对金刚石形核过程的影响。扫描电子显微镜（ＳＥＭ）形貌分析结果显示,纳米碳管处理能够促进金刚石形核。对非研磨基体而言,这是一种有效的增强金刚石形核的表面预处理方式。     

Y，Er离子注入对γ—TiAl金属间化合物高温氧化性能的影响

采用金属蒸气真空电弧(MEVVA)离子源将稀土Y,Er离子分别注入γ-TiAl金属间化合物,注入能量为50～60 keV,注入剂量为1×1017 cm-2.研究了γ-TiAl在空气中800～900℃,200 h的循环氧化行为.结果表明,Y,Er离子注入γ-TiAl的氧化增重比原始试样均未见明显减小,同时出现了严重的氧化膜剥落现象.不同于稀土改善Fe,Co和Ni基高温合金抗氧化性能,Y,Er离子注入不具有增加氧化膜粘附性,改善γ-TiAl抗氧化性能的作用.     

基片温度对强流脉冲离子束烧蚀等离子体沉积类金刚石薄膜结构和性能的影响

利用强流脉冲离子束 (High intensitypulsedionbeam HIPIB)烧蚀等离子体技术在Si(1 0 0 )基体上沉积类金刚石 (Dia mond likecarbon DLC)薄膜 ,基片温度的变化范围从 2 5℃ (室温 )到 40 0℃。利用Raman谱、X射线光电子谱 (XPS)、X射线衍射(XRD)和原子力显微镜 (AFM)研究基片温度对DLC薄膜的化学结合状态、表面粗糙度、薄膜显微硬度和薄膜内应力的影响。根据XPS和Raman谱分析得出 ,基片温度低于 30 0℃时 ,sp3C杂化键的含量大约在 40 %左右 ;从 30 0℃开始发生sp3C向sp2 C的石墨化转变。随着沉积薄膜时基片温度的提高 ,DLC薄膜中sp3C的含量降低 ,由 2 5℃时 42 .5 %降到 40 0℃时 8.1 % ,XRD和AFM分析得出 ,随着基片温度的增加 ,DLC薄膜的表面粗糙度增大 ,薄膜的纳米显微硬度降低 ,摩擦系数提高 ,内应力降低。基片温度为 1 0 0℃时沉积的DLC薄膜的综合性能最好 ,纳米显微硬度 2 2GPa ,表面粗糙度为 0 75nm ,摩擦系数为 0 .1 1 0。     

等离子熔射成形件真空浸渗处理

为提高等离子熔射成形制件的强度等机械性能，结合其微观结构特点，着重研究该类零件真空浸渗处理工艺，并讨论相关问题。     

Optical Emission Spectroscopic Studies of ICP Ar Plasma

The ion line of 434.8 nm and atom line of 419.8 nm of Ar plasma produced by an inductively coupled plasma （ICP） were measured by optical emission spectroscopy and the influences from the working gas pressure, radio-frequency （RF） power and different positions in the discharge chamber on the line intensities were investigated in this study. It was found that the intensity of Ar atom line increased firstly and then saturated with the increase of the pressure. The line intensity of Ar^＋, on the other hand, reached a maximum value and then decreased along with the pressure. The intensity of the line in an RF discharge also demonstrated a jumping mode and a hysteresis phenomenon with the RF power. When the RF power increased to 400 W, the discharge jumped from the E-mode to the H-mode where the line intensity of Ar atom demonstrated a sudden increase, while the intensity of Ar^＋ ion only changed slightly. If the RF power decreased from a high value, e.g., 1000 W, the discharge would jump from the H-mode back to the E-mode at a power of 300 W. At this time the intensities of Ar and Ar^＋ lines would also decrease sharply. It was also noticed in this paper that the intensity of the ion line depended on the detective location in the chamber, namely at the bottom of the chamber the line was more intense than that in the middle of the chamber, but less intense than at the top, which is considered to be related to the capacitance coupling ability of the ICP plasma in different discharge areas.     

利用反应溅射沉积在γ—Al_2O_3粉末上制备TiO_x/γ—A1_2O_3催化剂

在微波ECR等离子体中,用平面磁控溅射靶,在γ-Al_2O_2粉末上沉积了TiO_x膜.为了使γ-Al_2O_3颗粒能被TiO_x均匀覆盖,使用了振荡器.文中详细地介绍了实验装置.甲烷转化率,C_2和C_2H_2的产额与选择性的对比结果表明:这种方法制备的催化剂优于传统的化学方法所制备的催化剂,同时也表明振荡器的作用明显.     

Cu Films Deposited by Unbalanced Magnetron Sputtering Enhanced by ICP and External Magnetic Field Confinement

Metallic copper（Cu） films were deposited on a Si （100） substrate by unbalanced magnetron sputtering enhanced by radio-frequency plasma and external magnetic field confinement. The morphology and structure of the films were examined by scanning electron microscopy （SEM）, atomic force microscope （AFM） and X-ray diffraction （XRD）. The surface average roughness of the deposited Cu films was characterized by AFM data and resistivity was measured by a four-point probe. The results show that the Cu films deposited with radio-frequency discharge enhanced ionization and external magnetic field confinement have a smooth surface, low surface roughness and low resistivity. The reasons may be that the radio-frequency discharge and external magnetic field enhance the plasma density, which further improves the ion bombardment effect under the same bias voltage conditions. Ion bombardment can obviously influence the growth features and characteristics of the deposited Cu films.     

磁再约束等离子弧切割陶瓷实验研究

通过磁再约束等离子弧切割陶瓷实验，考察约束磁场对等离子弧特性，切割质量及无渣切速的影响规律，分析了所用磁约束装置的性能和方法的局限性，指出了进一步研究高质量约束磁场装置的必要性。     

常压辉光放电等离子体制备荧光碳纳米粒子

采用常压辉光放电等离子体制备了超细荧光碳纳米粒子。分别采用聚乙二醇(PEG)2000和聚乙烯吡咯烷酮(PVP)20000作为表面活性剂和表面修饰剂,利用辉光放电等离子体射流产生的大量高能电子等活性粒子分解乙醇溶液制备碳纳米粒子。采用透射电子显微镜和荧光分光光度计对生成物的形貌和荧光特性进行了检测。结果表明,生成物为石墨相的荧光碳纳米颗粒。随着反应时间的延长,生成物的荧光强度增强;采用PEG-2000修饰后产物的荧光强度比采用PVP-20000更强;丝状放电模式下生成物的荧光强度高于辉光放电模式。制备的碳纳米颗粒的荧光量子产率为46.58%。