Cd对Mg-Zn表面膜与腐蚀特性的影响研究

采用砂型铸造工艺制备Mg-1Zn和Mg-1Zn-2Gd镁合金试样,采用EDS对试样表面的元素分布情况进行测试。测试结果表明,添加Gd后,在合金表面随深度增加氧原子含量迅速下降,Gd元素在表面聚集,使得合金表面的氧化膜致密度比较高,具有较强的保护作用。对全浸腐蚀后的Mg-1Zn-2Gd合金表面进行SEM分析,发现合金表面发生局部腐蚀,第二相的不连续分布导致其主要作为阴极相起加速腐蚀的作用,但其腐蚀阻挡作用依然存在。     

Gd55Fe30P15非晶条带的磁热效应

采用熔体快淬法制备了Gd55Fe30P15合金条带,利用X射线衍射仪(XRD)分析了合金的相结构,通过综合物性测量系统(PPMS)研究了合金的居里温度及磁热效应。研究结果表明,Gd55Fe30P15合金条带是完全的非晶态,其居里温度TC为240K,在居里温度附近发生的磁性转变为二级相变;在5T外场下,最大等温磁熵变为2.73 J/kg.K,低场下,在185～295K宽温区出现一个磁熵变平台;高场下185～270K宽温区出现一个磁熵变平台,从而能够满足磁Ericsson型磁制冷机的要求。     

Effects of Gd2O3 and MgSiN2 sintering additives on the thermal conductivity and mechanical properties of Si3N4 ceramics

Si₃N₄ ceramics were prepared by gas pressure sintering at 1900°C for 12 h under a nitrogen pressure of 1 MPa using Gd₂O₃ and MgSiN₂ as sintering additives. The effects of the Gd₂O₃/MgSiN₂ ratio on the densification, microstructure, mechanical properties, and thermal conductivity of Si₃N₄ ceramics were systematically investigated. It was found that a low Gd₂O₃/MgSiN₂ ratio facilitated the thermal diffusivity of Si₃N₄ ceramics while a high Gd₂O₃/MgSiN₂ ratio benefited the densification and mechanical properties. When the Gd₂O₃/MgSiN₂ ratio was 1:1, Si₃N₄ ceramics obtained an obvious exaggerated bimodal microstructure and the optimal properties. The thermal conductivity, flexural strength, and fracture toughness were 124 W·m⁻¹·k⁻¹, 648 MPa, and 9.12 MPa·m^1/2, respectively. Comparing with the results in the literature, it was shown that Gd₂O₃-MgSiN₂ was an effective additives system for obtaining Si₃N₄ ceramics with high thermal conductivity and superior mechanical properties.     

Effect of Y_2Ba_4CuNbO_y on the Properties of Single Domain YBCO Superconductor by TSIG Process

The top-seeded infiltration and growth process (TSIG) is an important method to fabricate YBCO bulk superconductors. In this paper, single domain YBCO superconductors with different Gd2Ba4CuWOx (GdW2411) additions have been fabricated by TSIG process, the amount of GdW2411 added to Y2BaCuO5 (Y211) is in the range from 0wt% to 8 wt%, but there is no other additions to the liquid source. The growth morphology, microstructure and levitation force of the YBCO bulks have been investigated, it is found that the l...     

SrMoO_4：0.05Eu~（3＋）,0.05Gd~（3＋）的制备及发光性能研究

分别采用化学沉淀法、微波法、水热法制备了SrMoO4：0.05Eu3＋,0.05Gd3＋荧光粉,并通过X-射线粉末衍射（XRD）、荧光光谱和扫描电子显微镜（SEM）对其晶体结构、荧光光谱和形貌进行了表征。结果表明：SrMoO4：0.05Eu3＋,0.05Gd3＋的结构属体心四方晶系;其宽激发带由Eu3＋-O2-、Gd3＋-O2-电荷迁移带和Mo6＋-O2-基质吸收峰组成,荧光发光以在616nm处Eu3＋的5 D0→7 F2跃迁引起的红光发光最强;254nm紫外光激发时,化学沉淀法制备SrMoO4：0.05Eu3＋,0.05Gd3＋的发光峰比SrMoO4：0.05Eu3＋的相应发光峰强度增大,这是由于Gd3＋向Eu3＋的能量传递敏化增强了Eu3＋的发光。     

Phase control of magnetron sputtering deposited Gd2O3 thin films as high-κ gate dielectrics

Gd2O3 thin films as high-κ gate dielectrics were deposited directly on Si(001) substrates by magnetron sputtering at a pressure of 1.3 Pa and different temperatures. X-ray diffraction results revealed that all the films grown from 450 to 570℃ were crystalline, and the Gd2O3 thin films consisted of a mixture of cubic and monoclinic phases. The growth temperature was a critical parameter for the phase constituents and their relative amount. Low temperature was favorable for the formation of cubic phase while higher temperature gave rise to more monoclinic phase. All the Gd2O3 thin films grown from different temperatures exhibited acceptable electrical properties, such as low leakage current density (JL) of 10-5 A/cm2 at zero bias with capacitance equivalent SiO2 thickness in the range of 6-13 nm. Through the comparison between films grown at 450 and 570℃, the existence of monoclinic phase caused an increase in JL by nearly one order of magnitude and a reduction of effective dielectric constant from 17 to 9.     

溶剂热-溶胶凝胶两步法合成(Y,Gd)(P,V)O_4:Eu~(3+),Bi~(3+)荧光粉及其发光研究

采用溶剂热-溶胶凝胶两步法合成了(Y1-z,Gd z)1-x-y(P z,V1-z)O4:x Eu3+,yBi3+系列红色荧光粉。用XRD、SEM和荧光分光光度计,对试样的晶体结构、表面形貌及发光性能进行了表征。结果表明:样品为四方晶系,掺杂离子的加入对基质晶体结构影响不大;样品形貌均一,呈短杆状或椭圆状;激发光谱由位于250~400 nm的O2--V5+带和Eu3+-O2-带组成;最强发射峰位于619 nm,归属于Eu3+的5D0→7F2特征跃迁发射;Eu3+的最佳掺杂量为5 mol%(x=0.05);掺杂Bi3+、Gd3+、P5+后,样品发射强度得到显著提高,Bi3+的掺杂还会使激发带红移至400 nm。说明这类荧光粉是可用于近紫外芯片激发的白光LED用红色荧光粉。     

Sm2Ce2O7-Gd2Zr2O7复合材料制备及热导率

目的探讨了Gd_2Zr_2O_7的颗粒度和含量对(Sm_2Ce_2O_7)1-x(Gd_2Zr_2O_7)x复合材料热导率的影响。方法用纳米级和微米级粉体制备了两个系列的(Sm_2Ce_2O_7)1-x(Gd_2Zr_2O_7)x复合材料。用X射线衍射技术分析了材料的相组成,用扫描电镜观察了复合材料的显微形貌,用纽曼科普定律计算了复合材料的比热,用激光脉冲法测试了材料的热扩散系数。根据比热、密度和热扩散系数计算了复合材料的热导率,并根据最终热导率结果,分析了Gd_2Zr_2O_7颗粒度和含量对复合材料热导率的影响。结果所合成的粉体均具有单一的萤石晶体结构,纳米级Gd_2Zr_2O_7粉体最大比表面积为15.413 m~2/g,微米级Sm_2Ce_2O_7粉体最小比表面积为0.226 m~2/g。所制备的两个系列的(Sm_2Ce_2O_7)1-x(Gd_2Zr_2O_7)x复合材料也表现出单一的萤石晶体结构,但晶粒大小不均匀。结论当x=0.5时,纳米粉体制备的复合材料存在明显的纳米晶。微米级Gd_2Zr_2O_7对复合材料声子热导率抑制不明显,但可以抑制高温光子热导率;纳米级Gd_2Zr_2O_7的引入可明显降低复合材料的声子热导率,但对高温光子热导率抑制不明显。两个系列复合材料的热导率均低于YSZ。     

Sensitive and fast response ethanol chemical sensor based on as-grown Gd2O3 nanostructures

Well crystalline gadolinium oxide(Gd2O3) nanostructures were grown by annealing the hydrothermally as-prepared nanostructures without using any template. Microscopic studies of Gd2O3 nanostructures were recorded along the [111] direction due to the clearly resolved interplanar distance d(222)~0.31 nm of the cubic crystal structure Gd2O3. Sensing mechanism of Gd2O3 as efficient electron mediator for the detection of ethanol was explored. As-fabricated sensor demonstrated the high-sensitivity of ~0.266 μAm/M/cm2 with low detection limit(~52.2 μmol/L) and correlation coefficient(r2, 0.618). To the best of our knowledge, this was the first report for the detection of ethanol using as-grown(at 1000 oC) Gd2O3 nanostructures by simple and reliable I-V technique and rapid assessment of the reaction kinetics(in the order of seconds). The low cost of the starting reagents and the simplicity of the synthetic route made it a promising chemical sensor for the detection of various toxic analytes, which are not environmentally safe.