Limits for hydrogen leaks that can support stable flames

Quenching and blowoff limits of hydrogen diffusion flames on small burners were observed. Four burner types, with diameters as small as 8 μm, were considered: pinhole burners, curved-wall burners, tube burners, and leaky fittings. In terms of mass flow rate, hydrogen had a lower quenching limit and a higher blowoff limit than either methane or propane. Hydrogen flames at their quenching limits were the weakest flames recorded to date, with mass flow rates and heat release rates as low as 3.9 μg/s and 0.46 W. The quenching limit for a hydrogen flame at a 6 mm leaky compression fitting was found to be 28 μg/s. This limit was independent of supply pressure (up to 131 bar) and about an order of magnitude lower than the corresponding limits for methane and propane.     

Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD

The study of ultrathin ZrO₂ films grown on surface passivated germanium substrates by plasma enhanced Atomic Layer Deposition (PEALD) has been carried out. Nitride passivation has been used to form an interfacial layer between ZrO₂/Ge. The ultra-thin ZrO₂ film deposited with thickness of ~5.75 nm and refractive index of ~2.05 as observed through ellipsometry. The Ge3d, Zr3d, N1s and O1s are XPS core level spectra's confirm the formation of GeON and ZrO₂ ultra-thin films. The AFM results show the roughness of deposited films as low as 0.3 nm. The effect of post metallization annealing (PMA) on electrical properties of Au/Cr/ZrO₂/GeON/Ge capacitors has been investigated. The improvement in k value (~38) and an EOT value (~0.5 nm) after PMA on Ge/GeON/ZrO₂ stack has been observed. The flat band voltage and hysteresis of post metallization annealed devices has been reduced as compared to that of without PMA GeON/ZrO₂ stack.     

Scaling of analog LDPC decoders in sub-100 nm CMOS processes

Analog implementations of digital error control decoders, generally referred to as analog decoding, have recently been proposed as an energy and area competitive methodology. Despite several successful implementations of small analog error control decoders, little is currently known about how this methodology scales to smaller process technologies and copes with the non-idealities of nano-scale transistor sizing. A comprehensive analysis of the potential of sub-threshold analog decoding is examined in this paper. It is shown that mismatch effects dominated by threshold mismatch impose firm lower limits on the sizes of transistors. The effect of various forms of leakage currents is also investigated and minimal leakage current to normalizing currents are found using density evolution and control simulations. Finally, the convergence speed of analog decoders is examined via a density evolution approach. The results are compiled and predictions are given which show that process scaling below 90 nm processes brings no advantages, and, in some cases, may even degrade performance or increase required resources.     

Thickness limit of BaTiO3 thin film capacitors grown on SUS substrates using aerosol deposition method

We fabricated BaTiO₃ thin films with 2.2-0.1 μm thickness on hard stainless steel (SUS) substrates by using the ADM to confirm the causes of dielectric thickness limit showing in BaTiO₃ thin films prepared on SUS substrates and suggest key factors which can overcome the limit. Then, from the measurements of thickness dependence of their dielectric properties, the thickness limit of 0.2 μm was confirmed and to confirm the reason why their dielectric properties could not be measured in the thickness below 0.2 μm, the thickness dependence of leakage current mechanisms in BaTiO₃ films were investigated. As a result, by decreasing the thickness of films from 2.2 to 0.2 μm, the mechanism changed from Poole-Frenkel emission to modified-Schottky emission indicating increase of interface effects. Especially, in the case of 0.2 μm thickness, it was confirmed that the dominant mechanism was Fowler-Nordheim tunneling based on electric field concentration at a high electric field. Consequently, from this investigation of leakage current mechanism, it can be expected that the cause of thickness limits was electric field concentration at rough BaTiO₃/SUS interfaces forming in AD process, and to get over the thickness limit and decrease level of leakage currents, the hard substrates are required to reduce the interface roughness and oxygen vacancies acted as donors should be decreased.     

Burst detection using hydraulic data from water distribution systems with artificial neural networks

This paper presents research into the application of artificial neural networks (ANNs) for analysis of data from sensors measuring hydraulic parameters (flow and pressure) of the water flow in treated water distribution systems. Two neural architectures (static and time delay) are applied for time series pattern classification from the perspective of detecting leakage. Results are presented using data from an experimental site in a distribution system of a UK water company in which bursts were simulated by hydrant flushing. Field trials have shown how ANNs can be used effectively for a leakage detection task. Both static and time delay ANNs learned patterns of leaks/bursts. The time delay neural network showed improved performance over the static network. It is concluded that the effectiveness of an ANN in discovering relationships within the data is dependent upon two key factors: availability of sufficient exemplars and data quality.     

A Method to Measure Emissions from Dryers with Diffuse Leakages,Using Evaporated Water as a Tracer

Abstract

This paper describes a novel method to measure emission from dryers. The method resolves the known difficulties caused by diffuse emissions, and also solves the problems associated with high moisture content of the drying medium. The basic idea is to use water vapor to determine the exhaust flow, while a dry ice trap is used both to preconcentrate emitted VOCs and to determine the moisture content of the drying medium.     

Comparison of the Electrical Characteristics of PZT and SBT Thin Films

The electrical properties of lead zirconate titanate (PZT) and strontium bismuth tantalate (SBT) thin films are compared for nonvolatile random access memory applications. PZT thin films have high switchable polarization with poor fatigue resistance and higher leakage current densities as compared to SBT thin films deposited on platinized silicon substrates. Characterization of these films in terms of their domain dynamics under application of sub-switchable and switchable electric fields give valuable insight about the observed differences in the electrical behavior. In the present work the dielectric behaviors of SBT and PZT thin films at sub-switchable electric field were analyzed in terms of Rayleigh law. The reversible and irreversible polarization component of switchable polarization was separated by the measurement of capacitance-voltage (C-V) and polarization hysteresis loops. The conduction mechanisms in these films were evaluated by measuring field dependence of leakage current densities at various temperatures. The observed differences in electrical properties are explained in terms of the intrinsic defects and defect-domain interaction of these two materials.     

使用二级脱盐水时外啮合齿轮泵的径向间隙

基于二级脱盐水水质标准,对二级脱盐水在液压传动中的使用特点进行了分析,研究了使用二级脱盐水时外啮合齿轮泵齿轮径向间隙的确定方法。     

漏泄电缆在井下移动通信中应用的研究

阐述了井下无线电波传播特性,指出井下无线通信受阻的根本原因在于存在各种衰落。根据漏泄电缆通信理论,将漏泄电缆技术应用到井下移动通信中,设计一个可用于井下通信的抗衰落能力强的移动通信系统———漏泄电缆移动通信系统。漏泄电缆技术的应用,将可实现井下无线数据、图像及话音的高质量传输,为矿山的安全生产提供强有力保障。     

电力绝缘性能检测

通过绝缘介质的理论分析,阐述了电气设备绝缘检查通常的摇表检查,直流耐压及漏泄电流的测量,交流工频耐压,介质损失角的测量,在线检测等方法,以用来指导电气工程施工的安装和调试.