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We argue that the collective mode as observed in angle resolved photoemission spectroslopy (ARPES) on a large class of cuprates can be associated with dynamic incommensurate CDW fluctuations present in these materials. This scenario is substantiated by a comparison of calculated spectra with experimental ARPES data where we obtain a mode frequency that decreases toward optimal doping, thus strongly supporting the existence of a quantum critical point around this concentration. Moreover, we extract the temperature dependence of the associated bosonic spectrum from ARPES data, where it turns out that there is a continuous evolution from mode-type behavior below T c to a marginal Fermi liquid structure well above T c.  相似文献   
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重费米子体系可以通过维度等调控手段来展现出丰富而有吸引力的量子基态。首次通过分子束外延技术在石墨烯/6H-SiC(0001)衬底成功制备了高质量的USb2薄膜。结合反射式高能电子衍射、X射线衍射、电输运和X射线光电子能谱测量,证明了所制备的USb2薄膜是高质量的单晶薄膜。此外,利用扫描隧道显微镜和角分辨光电子能谱对USb2薄膜的表面形貌、原子结构和能带结构进行了表征。结果显示,生长的USb2薄膜的表面原子结构、电输运性质和能带结构与块体USb2单晶相似。最后,高质量USb2薄膜的成功制备和表征为未来通过生长理想厚度的超薄膜在低维铀基重费米子系统中探索奇妙性能提供了宝贵的实验经验。  相似文献   
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The doping-dependent evolution of the d-wave superconducting state is studied from the perspective of the angle-resolved photoemission spectra of a high-Tc cuprate, Bi2Sr2CaCu2 O8+δ (Bi2212). The anisotropic evolution of the energy gap for Bogoliubov quasiparticles is parametrized by critical temperature and superfluid density. The renormalization of nodal quasiparticles is evaluated in terms of mass enhancement spectra. These quantities shed light on the strong coupling nature of electron pairing and the impact of forward elastic or inelastic scatterings. We suggest that the quasiparticle excitations in the superconducting cuprates are profoundly affected by doping-dependent screening.  相似文献   
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We argue that the collective mode as observed in angle resolved photoemission spectroscopy (ARPES) on a large class of cuprates can be associated with dynamic incommensurate CDW fluctuations present in these materials. This scenario is substantiated by a comparison of calculated spectra with experimental ARPES data where we obtain a mode frequency which decreases towards optimal doping thus strongly supporting the existence of a quantum critical point around this concentration. Moreover we extract the temperature dependence of the associated bosonic spectrum from ARPES data where it turns out that there is a continuous evolution from mode-type behavior below T c to a marginal Fermi liquid structure well above T c.  相似文献   
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In order to understand the effects of electron-phonon coupling and Coulomb interactions in angle-resolved photoemission spectroscopy(ARPES),a spin-1/2 Hubbard-Holstein model at half-filling is theoretically investigated by means of the mean field theory and classical Monte Carlo simulation method.It shows that the spectral shape of the one-dimensional system is significantly modified by the electron-phonon coupling and Coulomb interactions.The suppression of charge-density wave in one-dimensional system ...  相似文献   
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Graphene has demonstrated great potential in new‐generation electronic applications due to its unique electronic properties such as large carrier Fermi velocity, ultrahigh carrier mobility, and high material stability. Interestingly, the electronic structures can be further engineered in multilayer graphene by the introduction of a twist angle between different layers to create van Hove singularities (vHSs) at adjustable binding energy. In this work, using angle‐resolved photoemission spectroscopy with sub‐micrometer spatial resolution, the band structures and their evolution are systematically studied with twist angle in bilayer and trilayer graphene sheets. A doping effect is directly observed in graphene multilayer system as well as vHSs in bilayer graphene over a wide range of twist angles (from 5° to 31°) with wide tunable energy range over 2 eV. In addition, the formation of multiple vHSs (at different binding energies) is also observed in trilayer graphene. The large tuning range of vHS binding energy in twisted multilayer graphene provides a promising material base for optoelectrical applications with broadband wavelength selectivity from the infrared to the ultraviolet regime, as demonstrated by an example application of wavelength selective photodetector.  相似文献   
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