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1.
(Ta2O5)1-x- (TiO2)x (TTOx) thin films, with x = 0, 0.03, 0.06, 0.08, and 0.11, were deposited using magnetron direct current (DC) sputtering method onto the P/boron-silicon (1 0 0) substrates by varying areas of Tantalum and Titanium metallic targets, in oxygen environment at ambient temperature. The as-deposited thin films were annealed at temperatures ranging from 500 to 800 °C. Generally, the formation of the Ta2O5 structure was observed from the X-ray diffraction measurements of the annealed films. The capacitance of prepared metal– oxide– semiconductor (MOS) structures of Ag/TTOx/p-Si was measured at 1 MHz. The dielectric constant of the deposited films was observed altering with varying composition and annealing temperature, showing the highest value 71, at 1 MHz, for the TTOx films, x = 0.06, annealed at 700 °C. With increasing annealing temperature, from 700 to 800 °C, the leakage current density was observed, generally decreasing, from 10?5 to 10?8 A cm?2, for the prepared compositions. Among the prepared compositions, films with x = 0.06, annealed at 800 °C, having the observed value of dielectric constant 48, at 1 MHz; and the leakage current density 2.7 × 10?8 A cm?2, at the electric field of 3.5 × 105 V cm?1, show preferred potential as a dielectric for high-density silicon memory devices.  相似文献   
2.
Unfilled tungsten bronze ceramics with the nominal formula Ba4PrFe0.5Nb9.5O30 were synthesized via the standard solid-state sintering route, and the effects of oxygen vacancies on the dielectric and electrical properties were investigated in addition to the structure. Room-temperature X-ray diffraction showed that the N2-annealed sample had the largest cell volume. Low-temperature spectrum showed that N2 annealing rendered the dielectric constant and dielectric loss more frequency dispersive, whereas O2 annealing inhibited the frequency dispersion. The dc conductivity of all the samples originated from the electrons produced in the second ionization of oxygen vacancies and was most likely controlled by a mixed conduction mechanism of the electron and oxygen-vacancy ions. The N2-annealed sample has the highest dc conductivity owing to its high concentration of oxygen vacancies. The broadening of the Raman lines and the decrease of Raman intensity for the N2-annealed sample originated from a significant structural disorder. X-ray photoelectron spectra demonstrated that the increased oxygen vacancies caused by the change of valences of Fe and Pr ions contributed to the structural disorder.  相似文献   
3.
Rapid synthesis of long calcium copper titanate (CCTO) nanorods was carried out by sequential annealing. CCTO thin films have been deposited on p-Si substrate by RF sputtering technique and afterwards, the samples were thermally treated using a preheated furnace by varying the annealing temperature from 850 °C to 1100 °C. CCTO nanorods of 12 µm lengths and 400–600 nm diameters were synthesized at 1100 °C. Based on the FESEM observations, a plausible growth mechanism has been proposed to explain the formation of nanorods. The (220) XRD peak of the CCTO film became prominent for the annealing temperature of 950 °C. The presence of nanoscale crystals in amorphous matrix has been observed by HRTEM studies. The elemental mapping of CCTO nanorod has shown a spatial variation of elements throughout the nanorod. The oxide and interface charge density was found to be increased with the rise in annealing temperature.  相似文献   
4.
生活水平的提高使得消费者对生鲜产品的需求不断增长,进而促进了冷链物流行业的快速发展。将客户按重要性分为重要客户和普通客户两类,以总配送成本最小为目标,建立考虑客户分类的两级容量有限车辆路径优化模型。提出两阶段启发式算法求解该模型:第一阶段设计改进的遗传-模拟退火算法增强全局搜索能力,其中采用轮盘赌选择机制结合精英保留策略保留优秀个体,部分匹配交叉算子结合自适应交叉率维持种群多样性,Metropolis准则以一定概率接受较差解;第二阶段使用精确方法求解一级配送路径。基于Perboli的Set2算例集和Hemmelmayr的Set5算例集,共30个基准案例,分别将所提出算法与四种现有算法进行对比分析,验证了改进算法的效果,并测试了算法的收敛性。基于模拟数据进行模型分析,验证了所提出模型和算法的有效性和适用性。  相似文献   
5.
《Ceramics International》2022,48(3):3647-3651
Thin films of Ag–Al2O3 composites were successfully grown on Si substrate by thermal evaporation method and their thermoelectric performance was modulated using post growth annealing technique. Pellet of Ag and Al mixture having 1:4 ratio was evaporated on Si substrate using the vacuum tube furnace. As grown sample was cut into pieces and post-growth annealing was performed at different temperatures using muffle furnace. XRD results suggested that as-deposited sample has amorphous nature, but crystallinity of the samples increase as an annealing temperature increase from 600 to 900oC. This structural behavior of annealed samples was further verified by Raman spectroscopy measurements. We have reported an optimal annealing temperature (800 0C) for the best thermoelectric performance of investigated composites. At this specific annealing temperature, charge carriers are highly mobile which resulted in the enhancement of thermoelectric power generation performance of Ag–Al2O3 composite. The value of power factor (1.38x10?2 W/m-K?2) reported in the current study is the highest value for Ag–Al2O3 composites so for reported in the literature according to the best of our knowledge.  相似文献   
6.
Au/SnO2 quantum dots (AuSQDs) were synthesized, and the effects of annealing on their structural and optical properties were examined. Significant changes were observed in the bandgap and surface plasmon resonance (SPR) of the AuSQDs after thermal treatment at different temperatures (400, 500, and 600 °C). The properties of the as-prepared and annealed samples were characterized via X-ray diffraction analysis, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy, and diffuse reflectance spectroscopy. Annealing reduced the bandgap from 3.03 to 2.33 eV and increased the crystallinity while maintaining an average crystallite size below 10 nm. XPS valence band (VB) profiles provided information regarding the VB edge potentials, which helped to determine the conduction band edge potentials. An enhancement in the SPR of the Au nanoparticles was observed for AuSQD-500, which had the smallest bandgap among the samples investigated.  相似文献   
7.
《Ceramics International》2020,46(17):27219-27225
Designing double metal-dielectric (cermet) solar selective absorber coatings (SSACs) often requires complex co-sputtering techniques with multiple targets. This inevitably limits the simple and low-cost industrial fabrication. Here, we develop novel nano-multilayered MoOx-based SSACs by simple and stable one-step reactive magnetron sputtering process using single molybdenum target. The proposed multilayer SSACs exhibit good solar absorptance of 0.93 and low thermal emittance of 0.06. Owing to the temperature-induced oxygen diffusion and oxidation phenomenon the as-sputtered SSACs have a poor thermal tolerance under air atmosphere, and after annealing at 200 °C for 150 h, the resulting absorptance is diminished from 0.93 to 0.90. However, the optical performance of the annealed SSAC is relatively stable in high-vacuum environment, even after annealing at 450 °C for 200 h, it still displays an ideal spectral selectivity of 0.92/0.07. With above properties, the resulting MoOx-based SSAC is a promising absorber for enduring thermal harvesting in solar vacuum collectors.  相似文献   
8.
This paper presents effect of thickness on the physical properties of thermally evaporated cadmium selenide thin films. The films of thickness 445 nm, 631 nm and 810 nm were deposited employing thermal evaporation technique on glass and ITO coated glass substrates followed by thermal annealing in air atmosphere at temperature 300 °C. The as-deposited and annealed films were subjected to the XRD, UV–Vis spectrophotometer, source meter, SEM and EDS to find the structural, optical, electrical, morphological and compositional analysis respectively. The structural analysis shows that the films have cubic phase with preferred orientation (1 1 1) and nanocrystalline nature. The structural parameters like inter-planner spacing, lattice constant, grain size, number of crystallites per unit area, internal strain, dislocation density and texture coefficient are calculated. The optical band gap is found in the range 1.69–1.84 eV and observed to decrease with thickness. The electrical resistivity is found to increase with thickness for as-deposited films and decrease for annealed films. The morphological studies show that the as-deposited and annealed films are homogeneous, smooth, fully covered and free from crystal defects like pin holes and voids. The grains in the as-deposited films are densely packed, well defined and found to be increased with thickness.  相似文献   
9.
采用脉冲激光沉积法在SiO2衬底上制备了CuGa0.8Ge0.2Se2薄膜。采用X射线衍射和X射线能谱仪研究了退火温度对薄膜晶体结构和成分的影响,利用扫描电子显微镜表征了薄膜的表面形貌,采用紫外—可见分光光度计分析了薄膜的光学特性。结果表明,在CuGaSe2中掺杂Ⅳ族元素Ge,光子吸收能量分别为0.65和0.92 e V,禁带宽度为1.57 e V,能够形成中间带。并随着退火温度的升高,CuGa0.8Ge0.2Se2薄膜的光学带隙逐渐减小。  相似文献   
10.
We report on a systematic study of the electromechanical properties of flexible copper (Cu) thin film for flexible electronics. Cu ink is synthesized with chemical reduction process. Cu ink film spin-coated on a polyimide substrate is annealed with white flash light, also known as intense pulsed light (IPL), which guarantees a room temperature and sub-second process in ambient conditions. IPL annealed Cu film shows the electrical resistivity of 4.8 μΩ cm and thickness of 200 nm. The electromechanical properties of IPL annealed Cu film are investigated via outer/inner bending, stretching, and adhesion tests, and it is compared with conventional electron-beam evaporated Cu film. IPL annealed Cu film shows a constant electrical resistance within a bending radius of 6 mm. The bending fatigue test shows that the Cu film can withstand 10,000 bending cycles. In the stretching test, the Cu film shows a 50% increase in resistance when a strain of 2.4% was induced. At 4% strain, the resistance increases more than 200%. Meanwhile, the electron-beam evaporated film shows a constant resistance up to a strain of 4%. Lower stretchability of IPL annealed Cu film is attributed to its inherent cracks and porous film morphologies. IPL annealing induces the local melting at the interface between the substrate and Cu film, which increases the adhesion strength of the Cu film. These results provide useful information regarding the mechanical flexibility and durability of the nanoparticle films for the development of flexible electronics.  相似文献   
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