Structural and optical properties of CdTe-nanocrystals thin films grown by chemical synthesis

By mans of a chemical synthesis technique stoichiometric CdTe-nanocrystals thin films were prepared on glass substrates at 70 °C. First, Cd(OH)₂ films were deposited on glass substrates, then these films were immersed in a growing solution prepared by dissolution of Te in hydroxymethane sulfinic acid to obtain CdTe. The structural analysis indicates that CdTe thin films have a zinc-blende structure. The average nanocrystal size was 19.4 nm and the thickness of the films 170 nm. The Raman characterization shows the presence of the longitudinal optical mode and their second order mode, which indicates a good crystalline quality. The optical transmittance was less than 5% in the visible region (400–700 nm). The compositional characterization indicates that CdTe films grew with Te excess.     

Through‐the‐glass spectroscopic ellipsometry for analysis of CdTe thin‐film solar cells in the superstrate configuration

Polycrystalline CdS/CdTe thin‐film solar cells in the superstrate configuration have been studied by spectroscopic ellipsometry (SE) using glass side illumination. In this measurement method, the first reflection from the ambient/glass interface is rejected, whereas the second reflection from the glass/film‐stack interface is collected; higher order reflections are also rejected. The SE analysis incorporates parameterized dielectric functions ε for solar cell component materials obtained by in situ and variable‐angle SE. In the SE analysis of the complete cells, a step‐wise procedure ranks the fitting parameters, including thicknesses and those defining the spectra in ε, according to their ability to reduce the root‐mean‐square deviation between the simulated and measured SE spectra. The best fit thicknesses from this analysis are found to be consistent with electron microscopy. Based on the SE results, the solar cell quantum efficiency (QE) can be simulated without any free parameters, and comparisons with measured QE enable optical model refinements as well as identification of optical and electronic losses. These capabilities have wide applications in photovoltaic module mapping and in‐line monitoring. Copyright © 2016 John Wiley & Sons, Ltd.     

CdTe/CdS量子点荧光猝灭法测定盐酸西替利嗪

建立一种基于纳米材料的荧光性质测定盐酸西替利嗪含量的新方法,盐酸西替利嗪能使硫化镉包被的碲化镉核壳型量子点(CdTe/CdS QDs)发生规律性的荧光猝灭,研究二者相互作用的最佳条件,从而建立测定盐酸西替利嗪含量的方法。结果表明:盐酸西替利嗪的浓度在0.40~42μg/m L范围内有良好的线性关系(r=0.9992),检测限为2.50×10-2μg/m L,回收率为93.80%~97.00%。结论:此方法简便、快捷、可靠,适用于盐酸西替利嗪的含量测定。     

Annealing effects on physical properties of doped CdTe thin films for photovoltaic applications

Polycrystalline Cadmium Telluride (CdTe) thin films were prepared on glass substrates by thermal evaporation at the chamber ambient temperature and then annealed for an hour in vacuum ~1×10⁻⁵ mbar at 400 °C. These annealed thin films were doped with copper (Cu) via ion exchange by immersing these films in Cu (NO₃)₂ solution (1 g/1000 ml) for 20 min. Further these films were again annealed at different temperatures for better diffusion of dopant species. The physical properties of an as doped sample and samples annealed at different temperatures after doping were determined by using energy dispersive x-ray analysis (EDX), x-ray diffraction (XRD), Raman spectroscopy, transmission spectra analysis, photoconductivity response and hot probe for conductivity type. The optical band gap of these thermally evaporated Cu doped CdTe thin films was determined from the transmission spectra and was found to be in the range 1.42–1.75 eV. The direct energy band gap was found annealing temperatures dependent. The absorption coefficient was >10⁴ cm⁻¹ for incident photons having energy greater than the band gap energy. Optical density was observed also dependent on postdoping annealing temperature. All samples were found having p-type conductivity. These films are strong potential candidates for photovoltaic applications like solar cells.     

CdS量子点/CdTe纳米棒光电极制备及其光电性能研究

本文利用化学沉积法和射频溅射法成功实现了CdS量子点/CdTe纳米棒复合光电极的制备。通过X射线粉末衍射(XRD)、扫描电镜(SEM)、紫外-可见吸收光谱(UV-vis)和电化学工作站分别对获得的光电极进行了结构、形貌和光电性能的表征;结果表明,所获得的光电极由CdS量子点和CdTe一维纳米棒组成,其中CdTe纳米棒沿着(111)择优方向定向生长。在不同CdS量子点厚度的光电极的电化学表征结果中,我们发现了由CdS的压电效应引起的新颖的热释电现象,并在25 cycle CdS QDs的光电极测试中获得了最好的结果,开路电压为0.49 V,短路电流为71.09 μA,其I-t曲线的开光比为6。我们在研究过程中还发现了热释电引起的电流反向现象,这一特性对于未来提高光电器件的性能具有重要的意义。     

Improving optical properties of CdTe quantum dots by a new multidentae biopolymer based on salep

In this work, we have successfully modified aqueous CdTe quantum dots (QDs) by a biopolymer based on poly (2-hydroxyethyl methacrylate) grafted onto salep via a facile method at room temperature. The obtained QDs were characterized using Fourier transform infrared spectroscopy (FT-IR), thermo-gravimetric analysis (TG), X-ray diffraction (XRD), and transmission electron microscopy (TEM). The size of the prepared QDs was estimated around 1.5 nm by TEM and XRD. Optical properties of modified QDs were monitored by absorption and fluorescence spectrophotometers. It was found that the fluorescence intensity of CdTe QDs was enhanced after coating by biopolymer. Finally, the fluorescence intensity of CdTe QDs was investigated at different temperatures and times.     

Study of polarization phenomena in Schottky CdTe diodes using infrared light illumination

Schottky CdTe diode detectors suffer from a polarization phenomenon, which is characterized by degradation of the spectral properties over time following exposure to high bias voltage. This is considered attributable to charge accumulation at deep acceptor levels. A Schottky CdTe diode was illuminated with an infrared light for a certain period during a bias operation, and two opposite behaviors emerged. The detector showed a recovery when illuminated after the bias-induced polarization had completely progressed. Conversely, when the detector was illuminated before the emergence of bias-induced polarization, the degradation of the spectral properties was accelerated. Interpretation of these effects and discussion on the energy level of deep acceptors are presented.     

Increased conversion efficiency in cadmium telluride photovoltaics by luminescent downshifting with quantum dot/poly(methyl methacrylate) films

Commercially available quantum dots have been encapsulated in a poly(methyl methacrylate) film and used as a luminescent downshifting layer on cadmium sulfide/cadmium telluride photovoltaic devices. Application of these films has resulted in a relative improvement to the short‐circuit current of over 4% by I–V measurement, with a significant increase in the contribution of short‐wavelength light resulting in 25% of the current available in this part of the spectrum being captured. The films have been shown to be highly scattering and the associated difficulties this provides to external quantum efficiency measurements have been discussed. A range of optical characterisation techniques, particularly laser beam induced current, have been used to probe the effect the films have on a cadmium sulfide/cadmium telluride device. An alternate methodology for performing external quantum efficiency measurements with the quantum dot films has been proposed. Copyright © 2013 John Wiley & Sons, Ltd.     

Ge(211)衬底上分子束外延CdTe薄膜

采用分子束外延在3英寸Ge(211)衬底上生长了10 μm厚的CdTe(211)B薄膜.CdTe表面镜面光亮,3英寸范围厚度平均值9.72 μm,偏差0.3 μm;薄膜晶体质量通过X射线双晶迴摆曲线进行评价,FWHM平均值80.23 arcsec,偏差3.03 arcsec; EPD平均值为4.5×106cm-2.通过...