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1.
In this work, we focus on the Ge nanoparticles (Ge-np) embedded ZnO multilayered thin films. Effects of reactive and nonreactive growth of ZnO layers on the rapid thermal annealing (RTA) induced formation of Ge-np have been specifically investigated. The samples were deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively on Si substrates. As-prepared thin film samples have been exposed to an ex-situ RTA at 600 °C for 60 s under forming gas atmosphere. Structural characterizations have been performed by X-ray Diffraction (XRD), Raman scattering, Secondary Ion Mass Spectroscopy (SIMS), and Scanning Electron Microscopy (SEM) techniques. It has been realized that reactive or nonreactive growth of ZnO layers significantly influences the morphology of the ZnO: Ge samples, most prominently the crystal structure of Ge-np. XRD and Raman analysis have revealed that while reactive growth results in a mixture of diamond cubic (DC) and simple tetragonal (ST12) Ge-np, nonreactive growth leads to the formation of only DC Ge-np upon RTA process. Formation of ST12 Ge-np has been discussed based on structural differences due to reactive and nonreactive growth of ZnO embedding layer.  相似文献   
2.
An investigation was made into the effect of doping with the elemental crystal Ge or/and GeO2 on the TiO2-V2O5-Y2O3 varistor ceramics. The result shows that as the doping contents of V2O5 and Y2O3 are 0.5 mol%, respectively, co-doping with 0.3 mol% Ge and 0.9 mol% GeO2 makes the highest α value (α = 12.8), the lowest breakdown voltage V1mA (V1mA = 15.8 V/mm) and the highest grain boundary barrier ΦB (ΦB = 1.48 eV), which is remarkably superior to the TiO2-V2O5-Y2O3 varistor ceramics undoped with Ge and GeO2 and mono-doped with Ge or GeO2. The TiO2-V2O5-Y2O3-Ge-GeO2 ceramic has the prospect of becoming a novel varistor ceramic with excellent electrical properties.  相似文献   
3.
采用脉冲激光沉积法在SiO2衬底上制备了CuGa0.8Ge0.2Se2薄膜。采用X射线衍射和X射线能谱仪研究了退火温度对薄膜晶体结构和成分的影响,利用扫描电子显微镜表征了薄膜的表面形貌,采用紫外—可见分光光度计分析了薄膜的光学特性。结果表明,在CuGaSe2中掺杂Ⅳ族元素Ge,光子吸收能量分别为0.65和0.92 e V,禁带宽度为1.57 e V,能够形成中间带。并随着退火温度的升高,CuGa0.8Ge0.2Se2薄膜的光学带隙逐渐减小。  相似文献   
4.
Optical fibers possessing a crystalline oxide core have significant potential for novel and useful electro‐ or nonlinear‐optic waveguides. Presently, however, their utility suffers from the slow speed and limited cladding materials afforded by conventional crystal‐fiber‐growth techniques. Described herein is the development of single phase bismuth germanium oxide crystalline core fibers using conventional glass fiber drawing. More specifically, fibers were fabricated and evaluated based on 2 embodiments of the molten core method. In a first approach, a Bi4Ge3O12 single crystal was employed as the precursor and sleeved inside a borosilicate glass cladding. In the second approach, additional Bi2O3 was included along with the Bi4Ge3O12 precursor single crystal. Glass clad fibers drawn from the precursor Bi4Ge3O12 single crystal resulted in a polycrystalline core with various crystal morphologies (line‐like, dendrite‐like, and uniform grains) as will be discussed, while fibers drawn from the Bi4Ge3O12 single crystal surrounded by Bi2O3 resulted in a more homogeneous microstructure. The eulytine crystal structure was crystallized using both approaches, with the formation of a secondary crystal phase using the second approach. More particularly, this work aims at showing that single phase and phase pure crystalline oxide core optical fibers can be achieved using conventional glass fiber draw processes, although further optimization is necessary for obtaining single crystalline core fibers.  相似文献   
5.
通过建立台格庙勘查区首采煤层冒裂安全性分区图和煤层顶板含水层富水性分区图,来对煤层顶板的含水层涌(突)水条件进行评价。针对勘查区煤层厚度变化大、顶板无稳定隔水层,顶板含水层富水性较弱的特点,在传统的“三图法”基础上,充分考虑了含水层的富水性和导水裂缝带发育高度这两个因素,选用导水裂缝带高度与含水层厚度的百分比来表示导水裂缝带发育高度对含水层涌(突)水的影响,在此基础上对首采煤层顶板含水层涌(突)水条件进行综合分区评价。四井田中部及二井田北部地区涌(突)水危险性为较危险区,三井田北部、五井田南部及勘查区南部局部地区涌(突)水危险性为过渡区,其他地段为安全区、较安全区。针对顶板充水含水层涌(突)水条件综合分区,提出了疏放水、注浆、监测等防治水措施建议。  相似文献   
6.
7.
为研究电子辐照空间太阳电池的损伤机制,对电子辐照GaInP/GaAs/Ge三结太阳电池进行了光致发光谱测量,分析了GaInP顶电池及GaAs中间电池发光强度随电子注量的变化规律。利用辐射效率关系对归一化发光强度随电子辐照注量的变化进行了拟合,分别得到了GaInP顶电池及GaAs中间电池在不同辐照条件下的少子非辐射复合寿命τnr,通过对比辐照前后少子非辐射复合寿命的衰降变化,发现GaInP顶电池的抗辐照性能优于GaAs中间电池。  相似文献   
8.
为了研究光子计数成像系统中感应电荷层Ge薄膜的制备工艺,改善光子计数成像系统的成像稳定性,采用直流磁控溅射法在熔石英衬底上制备了Ge薄膜,分析了工作气体Ar气通入量对Ge薄膜沉积速率的影响,利用表面轮廓仪及四探针表面电阻仪对样品分别进行了表面粗糙度及电学性能的表征。结果表明:随着Ar气通入量的增加,Ge薄膜沉积速率先上升后下降,在Ar气通入量为15sccm时,Ge薄膜的沉积速率出现极大值;Ge薄膜的表面粗糙度及薄膜电阻率均随着Ar气通入量的升高而增大;薄膜越厚,其电阻受氧化影响越小,电学性能越稳定。  相似文献   
9.
In this work we have studied the individual a-Si and a-Ge hydrogenated layers prepared by RF sputtering on Si (100) substrates using Ar and H2 gas mixture. The absolute value of atomic content of the H was determined by Elastic Recoil Detection Analysis (ERDA) with 1.6 MeV 4He+ beam. The dynamics of the out diffusion was investigated by annealing in high purity (99.999%) argon atmosphere at 350 °C for several hours. It was clearly shown that hydrogen can diffuse out faster from Ge film than from the Si one during annealing of the samples.  相似文献   
10.
We report the orientation control of crystalline Ge (111) and Ge (001) growth on SrTiO3 (100) substrate by adjusting the temperature of substrate. It is found that the substrate temperature plays an important role for the formation of crystalline Ge with different surface orientations and interfacial chemical configuration during the sputtering process. At 500 °C, Ge (111) with good crystalline quality is formed, while Ge (001) is preferably grown on SrTiO3 substrate at 650 °C. Our results show the possibility of manipulating the surface orientations during Ge growth on SrTiO3 by controlling the substrate temperatures.  相似文献   
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