Thermally stimulated discharge current studies in pure and fe-doped polystyrene films

Studies were made on the thermally stimulated discharge currents (TSDCs) in pure (undoped) and Fe-doped polystyrene films as a function of polarizing field, polarizing temperature and dopant concentration. While undoped films exhibited a single peak, doped films showed two peaks one at low temperatures and another at high temperatures. The low temperature peak, which exhibits a shift towards lower temperatures with increasing dopant concentration, is attributed to the relaxation of the main chain, while the high temperature peak, which shows a tendency to shift towards higher temperatures with dopant concentration, is due to space charge polarization. The TSDCs were higher for low dopant concentrations than their undoped counterparts, while for high concentrations of the dopant, the TSDCs decreased. Formation of charge transfer complexes at low dopant concentrations and molecular aggregates at higher dopant concentrations are suggested as the possible reasons for this behaviour.     

钴钇掺杂（Ba,Sr）TiO_3基介电陶瓷的制备与性能研究

采用二次固相反应法制备Ba0.7Sr0.3TiO3介电陶瓷,研究了掺杂钴、钇离子对钛酸锶钡介电性能的影响。结果表明,陶瓷样品Y3＋、Co3＋的最佳掺杂浓度分别为0.04mol%和0.05mol%,最佳烧结温度为1340℃,样品的相对介电常数为4200,介电损耗（tanδ）为0.005。样品的结构为四方晶系,P4mm空间群。获得了高介电常数、低损耗的Ba0.7Sr0.3TiO3介电陶瓷。     

氧传感器作用原理及其固体电解质的制备

简要讨论了ZrO2基氧传感器的作用原理及用于氧传感器的钇稳定氧化锆粉体的几种制备方法。     

Mo~( 6)掺杂制备SO_4~(2-)/TiO_2/MoO_3固体超强酸催化合成氯乙酸异辛酯

以氯乙酸和异辛醇为原料,用Mo 6掺杂制备SO2-4/TiO2/MoO3的固体超强酸催化剂催化合成氯乙酸异辛酯,研究了酯化反应的优化条件。当n(异辛醇):n(氯乙酸)为1.1∶1;催化剂用量为反应物料质量的2.0%时,反应时间90min,氯乙酸异辛酯的收率达到95.5%。     

Al掺杂对锰酸锂结构与性能的影响

采用固相法合成了Al掺杂的尖晶石LiAlxMn2-xO4(x=0～0.4).通过X射线衍射对LiAlxMn2-xO4的物相进行了研究,并探讨了Al掺杂对材料的充放电性能和电子电导率的影响.合成的LiAlxMn2-xO4均为纯尖晶石相.随着Al的掺入,LiAlxMn2-xO4的充放电循环性能得到改善,Al含量越高,循环过程中的容量衰减越小.电子电导率测试结果表明:掺杂Al后,降低了材料的电子电导率,这与Al的掺入降低了晶体中电子的离域作用有关.     

Improved arsenic doping in metalorganic chemical vapor deposition of HgCdTe andin situ growth of high performance long wavelength infrared photodiodes

Controlled and effective p-type doping is a key ingredient forin situ growth of high performance HgCdTe photodiode detectors. In this paper, we present a detailed study of p-type doping with two arsenic precursors in metalorganic chemical vapor deposition (MOCVD) of HgCdTe. Doping results from a new precursortris-dimethylaminoarsenic (DMAAs), are reported and compared to those obtained from tertiarybutylarsine (TBAs). Excellent doping control has been achieved using both precursors in the concentration range of 3 × 1015-5 × 10¹⁷ cm⁻³ which is sufficient for a wide variety of devices. Arsenic incorporation efficiency for the same growth temperature and partial pressure is found to be higher with DMAAs than with TBAs. For doping levels up to 1 × 10₁₇ cm⁻³, the alloy composition is not significantly affected by DMAAs. However, at higher doping levels, an increase in the x-value is observed, possibly as a result of surface adduct formation of DMAAs dissociative products with dimethylcadmium. The activation of the arsenic as acceptors is found to be in the 152–50% range for films grown with DMAAs following a stoichiometric anneal. However, a site transfer anneal increases the acceptor activation to near 100%. Detailed temperature dependent Hall measurements and modeling calculations show that two shallow acceptor levels are involved with ionization energies of 11.9 and 3.2 meV. Overall, the data indicate that DMAAs results in more classically behaved acceptor doping. This is most likely because DMAAs has a more favorable surface dissociation chemistry than TBAs. Long wavelength infrared photodiode arrays were fabricated on P-on-n heterojunctions, grownin situ with iodine doping from ethyl iodide and arsenic from DMAAs on near lattice matched CdZnTe (100) substrates. At 77K, for photodiodes with 10.1 and 11.1 (im cutoff wavelengths, the average (for 100 elements 60 × 60 μm² in size) zero-bias resistance-area product, R₀A are 434 and 130 ohm-cm², respectively. Quantum efficiencies are ≥50% at 77K. These are the highest R₀A data reported for MOCVDin situ grown photodiodes and are comparable to state-of-the-art LPE grown photodiodes processed and tested under identical conditions.     

中热固相法制备掺杂钛的钒酸锂正极材料

以Li2CO3和V2O5为原料,用中热固相法制备了掺杂Ti4+的锂离子电池正极材料Li1.1V3―yTiyO8(y=0.05、0.1、0.2),并对其电化学性能进行了研究。研究表明,掺杂Ti能够很好地改善中热固相法产品的电化学性能,且当y=0.1时,Li1.1V3―yTiyO8循环性能最好,首次放电比容量高达250.9 mAh/g。     

Texture effect on microyielding of wrought magnesium alloy AZ31

Uniaxial tension tests and elastoplastic self-consistent (EPSC) simulations were conducted to study the effect of texture on the microyielding of highly textured AZ31 plate. The onset of microyielding is always associated with the activation of basal 〈a〉 slip irrespective of starting texture, while the value of the microyield stress does depend on the texture. The macroscopic yield stress is largely affected by the critical resolved shear stress of the deformation mode with the highest Schmid factor. An inverse relation is found between the microyield strength normalized by the macroscopic yield strength and the average Schmid factor of prism 〈a〉 slip, which is useful for a rough estimate of the microyield strength.