Synthesis and characterization of Manganese doped Tungsten oxide by Microwave irradiation method

The aim of this article is to synthesis tungsten oxide (WO₃) nanoparticle along with Manganese (3 wt% and 10 wt%) by Microwave irradiation method. The physical properties of the synthesized Manganese doped Tungsten oxide materials were characterized by X-Ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR), Transmission Electron Microscope (TEM), UV-Diffuse Reflectance Spectroscopy, SEM-EDAX and Photoluminescence studies. The predominant peaks obtained in X-ray diffraction pattern reveal the crystalline nature of the nanoparticles and the structure belongs to Monoclinic for pure and Mn doped WO₃. FTIR analysis shows the presence of Tungsten and oxygen in the synthesis material and verified with EDAX. TEM analysis shows both pristine and Mn doped WO₃ nanopaticles. They are having spherical shaped morphology with average particle size from 35 to 40 nm. UV-DRS revealed that the bandgap energy for pure and Manganese doped WO₃ are discussed in this article. The Scanning Electron Microscope analysis shows the plate like morphology for pure WO₃ and the morphology were decreased by doping Manganese. The defects and oxygen deficiencies were analysed by photoluminescence spectroscopy.     

Structural dependence of microwave dielectric properties of spinel structured Mg2(Ti1-xSnx)O4 solid solutions: Crystal structure refinement,Raman spectra study and complex chemical bond theory

Mg₂(Ti_1-xSn_x)O₄ (x?=?0–1) ceramics were prepared through conventional solid-state method. This paper focused on the dependence of microwave dielectric properties on crystal structural characteristics via crystal structure refinement, Raman spectra study and complex chemical bond theory. XRD spectrums delineated the phase information of a spinel structure, and structural characteristic of these compositions were achieved with the help of Rietveld refinements. Raman spectrums were used to depict the correlations between vibrational phonon modes and dielectric properties. The variation of permittivity is ascribed to the Mg₂(Ti_1-xSn_x)O₄ average bond covalency. The relationship among the B-site octahedral bond energy, tetrahedral bond energy and temperature coefficient are discussed by defining on the change rate of bond energy and the contribution rate of octahedral bond energy. The quality factor is affected by systematic total lattice energy, and the research of XPS patterns illustrated that oxygen vacancies can be effectively restrained in rich oxygen sintering process. Obviously, the microwave dielectric properties of Mg₂(Ti_1-xSn_x)O₄ compounds were obtained (${\epsilon }_r$= 12.18, $Q\times f$?=?170,130?GHz, ${\tau }_f$?=??53.1?ppm/°C, x?=?0.2).     

Optimised phase compositions and improved microwave dielectric properties based on calcium tin silicates

The Ca_(1+2y)Sn_(1-x)Si_(1+y)O_(5-2x+4y) low-permittivity microwave dielectric ceramics were prepared through solid-state reaction at 1350–1450 °C for 5 h. The relations between microwave dielectric properties and phase compositions for non-stoichiometric Ca_(1+2y)Sn_(1-x)Si_(1+y)O_(5-2x+4y) ceramics have been investigated. A single CaSnSiO₅ phase with abnormally positive temperature coefficient of resonant frequency (τ_f = + 62.5 ppm/°C) was synthesised at 1450 °C. This composition was an effective τ_f compensator of CaSiO₃ and Ca₃SnSi₂O₉ phases with typically negative τ_f value. The CaSiO₃ second phase was related to the Sn deficiency in the CaSn_(1-x)SiO_(5-2x) (0 < x < 1.0) composition, whereas the Ca₃SnSi₂O₉ second phase was obtained by controlling the Ca:Sn:Si ratios on the basis of the Ca_(1+2y)SnSi_(1+y)O_(5+4y) (0 < y < 1.0) composition. A promising low-permittivity millimetre-wave ceramic with most excellent microwave dielectric properties (ε_r = 10.2, Q×f = 81,000 GHz and τ_f = −4.8 ppm/°C) was produced from the Ca_(1+2y)SnSi_(1+y)O_(5+4y) (y = 0.4) ceramic.     

Gasification of polyethylene using steam plasma generated by microwave discharge

Gasification of polyethylene (PE) pellet was studied using atmospheric argon-steam plasma generated by microwave discharge and the feasibility of the process was examined. The experimental results showed that additional steam to argon plasma promoted the weight decrease of PE and enhanced the production of H₂, CO, CO₂ and CH₄. The results confirmed that the treatment of plastics with the steam plasma was effective to obtain synthesis gas.     

Microwave-Assisted Graphite-Support Synthesis of Imidazolones

5(4H)-Oxazolones react with ammonium acetate under microwave irradiation and using graphite as support in an eco-friendly process. The reaction was carried out under solvent-free conditions and the imidazolones were obtained quantitatively. Moreover the reaction time was reduced too.     

WKB近似下的Fourier衍射成象方法

对于介质目标微波衍射成象，本文引入了ＷＫＢ近似来模拟目标内部总场。基于这种近似，我们导出了Ｆｏｕｒｉｅｒ衍射公式，并采用了广义滤波逆传播方法由目标空间谱实现目标特性的重建。计算机模拟结果表明采用ＷＫＢ近似重建目标特性较Ｂｏｒｎ近似有明显改善。     

高可靠镀Ni／Au工艺及其在微波PTFE电路上的应用

介绍了高可靠电镀Ｎｉ／Ａｕ工艺在ＰＴＦＥ微波印制电路上的应用，并分析了氨基磺酸盐镀软镍和亚硫酸盐镀软金工艺的影响因素及提高Ｎｉ／Ａｕ镀层之间附着力的措施。通过实验及应用证明了与直接镀金工艺相比，在软基材ＰＴＦＥ敷铜箔板上镀Ｎｉ／Ａｕ工艺能大大提高微波电路的可焊性，高温稳定性和长期可靠性，并且用其所制作的微波器件的高频性能也优于直接镀金工业。     

新型微波-毫米波幅相测试系统及扩展应用

介绍了一种新型微波 毫米波幅相测试系统及其在相关测试领域中的典型应用。与传统微波幅相测试系统相比 ,该系统具有原理新颖、结构简单、扩展频段容易和使用方便等优点。本系统目前广泛应用于紧缩场电气性能检测、天线测量和RCS测量等领域中 ,频率范围为 1～ 110GHz。本测试系统已经申请国家专利 ,并通过相关部门鉴定。     

微波电路互联与制造技术

介绍微波电路CAD与优化、微波集成电路及其制造、微波互联材料与工艺、微波MEMS等微波电路互联与制造新工艺、新技术的国内外研究和发展动态。     

GaN材料系列的研究进展

ＧａＮ及其合金作为第三代半导体材料具有一系列优异的物理和化学性质，在光电子器件，高温大功率电子器件及高频微波器件应用方面具有广阔的前景，已成为当前高科技领域的研究重点，论述了这种材料的研究历史与发展现状，物理与化学性质，薄膜的生长方法及在光学电子和微电子器件应用于方面的研究进展。