Understanding on the hydrogen detection of plasma sprayed tin oxide/tungsten oxide (SnO2/WO3) sensor

The plasma spray technique was well proven in producing metal oxide based gas sensors in the last two decades using different powder feedstocks. However, limited research was made to fabricate hydrogen gas sensor from tin oxide layer coated over tungsten oxide layer. This paper attempts to interpret the hydrogen gas sensing performances of plasma sprayed coating derived by depositing tin oxide layer over tungsten oxide (SnO₂/WO₃) layer. Plasma sprayed SnO₂/WO₃ sensor showed maximum response of 90% at 150 °C in contrast to stand-alone WO₃ (89% at 350 °C) and stand-alone SnO₂ (89% at 250 °C). The lower operating temperature of SnO₂/WO₃ sensor without compromising gas response was attributed to the WO₃–SnO₂ hetero-junction. SnO₂/WO₃ sensor showed selective sensing towards hydrogen with respect to carbon monoxide and methane gases. This sensor also possessed repeatable characteristics after 39 days from the initial measurement. In a nut-shell, plasma spayed SnO₂/WO₃ sensor showed stability of base resistance, repeatability after successive response and recovery cycles, selective sensing towards 500 ppm H₂ with significant magnitude of gas response of 90%, response time of 35 s and recovery time of 269 s at a temperature of 150 °C.     

Methods and mechanisms for uniformly refining deformed mixed and coarse grains inside a solution-treated Ni-based superalloy by two-stage heat treatment

The uniform refinement mechanisms and methods of deformed mixed and coarse grains inside a solution-treatment Ni-based superalloy during two-stage annealing treatment have been investigated.The two-stage heat treatment experiments include an aging annealing treatment(AT)and a subsequent recrystallization annealing treatment(RT).The object of AT is to precipitate some δ phases and consume part of storage energy to inhibit the grain growth during RT,while the RT is to refine mixed and coarse grains by recrystallization.It can be found that the recrystallization grains will quickly grow up to a large size when the AT time is too low or the RT temperature is too high,while the deformed coarse grains cannot be eliminated when the AT time is too long or the RT temperature is too low.In addition,the mixed microstructure composed of some abnormal coarse recrystallization grains(ACRGs)and a large number of fine grains can be observed in the annealed specimen when the AT time is 3 h and RT tem-perature is 980℃.The phenomenon attributes to the uneven distribution of δ phase resulted from the heterogeneous deformation energy when the AT time is too short.In the regions with a large number of δ phases,the recrystallization nucleation rate is promoted and the growth of grains is limited,which results in fine grains.However,in the regions with few δ phases,the recrystallization grains around grain boundaries can easily grow up,and the new recrystallization nucleus is difficult to form inside grain,which leads to ACRGs.Thus,in order to obtain uniform and fine annealed microstructure,it is a prereq-uisite to precipitate even-distributed δ phase by choosing a suitable AT time,such as 12 h.Moreover,a relative high RT temperature is also needed to promote the recrystallization nucleation around δ phase.The optimal annealing parameters range for uniformly refining mixed crystal can be summarized as:900℃×12 h+990℃×(40-60 min)and 900℃×12 h+1000℃×(10-15 min).     

钨中空位及其团簇的能量学和动力学性质参数

在总结前人钨中空位及其团簇的能量学和动力学行为的研究成果基础上，采用第一性原理方法系统计算了钨中空位及其团簇的结合能和扩散能垒。研究发现，交换关联泛函PW91和PBE较PBEsol、AM05和LDA更适合用于计算钨空位的能量学性质。基于第一性原理计算结果对文献中单空位形成能、双空位作用性质等争议性问题进行了讨论，并对钨经验势进行了评估。研究结果表明，钨中孤立单空位间总是相互排斥，而空位团簇（V_n>3）对单空位具有很强的吸引作用，其结合能随着所含空位个数增多呈现波动性增大的趋势。空位团簇稳定结构可通过最小化Wigner-Seitz表面积来确定，其结合能与V_n与V_n-1之间的Wigner-Seitz面积之差呈正比。     

2219铝合金搅拌摩擦焊和钨极保护焊焊接件残余应力的中子衍射研究

利用中子衍射法对2219铝合金搅拌摩擦焊（FSW）和钨极保护焊（TIG）焊接件开展了三维残余应力测量，并对残余应力分布规律进行了分析。结果表明：焊接件的纵向残余应力数值较大；FSW焊接件残余应力整体较TIG焊接件的小；FSW和TIG焊接件的残余拉应力最大值分别为101 MPa和174 MPa，FSW焊接件残余拉应力最大值较TIG焊接件的小；FSW残余拉应力最大值处于轴肩边缘，且前进侧峰值大于后退侧峰值；TIG焊接件残余拉应力最大值处于焊缝边缘。通过中子衍射实验获得的焊接件残余应力分布，将可用于焊接工艺的优化与焊接件的寿命预测。     

中国散裂中子源靶体研制

中国散裂中子源(CSNS)靶体选用钨为靶材、钽为包覆层，采用包套法结合热等静压扩散焊工艺制备了钽包覆钨靶片。经检测，钨钽界面结合良好，钽层与钨基体平均结合强度大于64.07 MPa。靶体将钨靶片分成厚度不等的11片，散热采用一进一出的并行流结构，利用CFD软件进行了模拟计算，钨靶片间冷却流道间隙为1.2 mm，100 kW满功率运行情况下靶体最高温度为182.3 ℃，冷却水温升为7.1 ℃。经过半年多的试运行，CSNS靶体各参数满足CSNS的要求。     

钴/镍复合中间层真空扩散连接钨与钢

以钴粉/镍箔为复合中间层，采用800，900和1 000 ℃等三种连接温度，加压10 MPa并保温120 min的工艺条件，对钨/钢真空扩散连接. 研究了接头的微观组织、成分分布、力学性能及断口特征. 结果表明，连接温度为800 ℃和900 ℃时，钨/中间层界面金属间化合物生成很少，对应接头抗剪强度分别为186 MPa和172 MPa，断口均位于钨母材中近界面的位置，为典型解理断裂形貌；当连接温度升至1 000 ℃时，钨/中间层界面生成厚度小于2 μm的连续金属间化合物层，接头抗剪强度降至115 MPa，断裂也发生在钨母材中近界面的位置，断口大部分区域为沿晶断裂特征.     

扫描隧道显微镜钨针尖的制备与表征

采用直流电化学刻蚀方法制备扫描隧道显微镜钨针尖,研究了电化学刻蚀过程中NaOH溶液浓度、钨丝浸入长度和刻蚀电压对针尖形貌的影响。通过扫描电子显微镜(SEM)测量针尖曲率半径和针尖纵横比值,以表征针尖的尺寸和形状;通过能谱仪(EDS)分析针尖表面成分,以表征表面清洁度;通过场发射显微镜(FEM)得到Fowler-Nordheim (F-N)曲线来检测针尖发射性能。实验结果表明,当溶液浓度为2 mol/L、钨丝浸入长度为4 mm、刻蚀电压为3 V时,可以得到曲率半径约为100 nm、纵横比值为13的针尖,且表面无钨的氧化层。FEM结果显示当对针尖施加500 V的负偏压时,针尖可以稳定发射50 nA量级的电流,且针尖性能具有良好的一致性。     

Strengthening Mechanism and Microstructure of Deformable Ti Particles Reinforced AZ91 Composite

In this study, the deformable titanium (Ti) particles reinforced AZ91 composite was successfully prepared by powder metallurgy and subsequent extrusion. The mechanical properties and microstructural evolution of pure AZ91 and 5Ti/AZ91 composite were studied. The yield strength, ultimate tensile strength, and elongation of 5Ti/AZ91 composite are measured to be 212 MPa, 323 MPa, and 10.1%, respectively. Microstructure analysis revealed that Ti particles are elongated along the extrusion direction, forming a discontinuous strip Ti particles, fine precipitated Mg₁₇Al₁₂ phase inhibits dynamic recrystallization (DRX) behavior through Zener pinning effect and hinders the growth of matrix grains, resulting in refiner grains of 5Ti/AZ91 composite. Heterogeneous deformed Ti particles and magnesium (Mg) matrix to generate additional heterogeneous deformation-induced (HDI) strengthening. Heterogeneous deformation-induced strengthening mainly contributed to the increment of yield strength for 5Ti/AZ91 composite.