塔里木盆地塔西南坳陷柯东构造带甫沙4井原油来源及充注过程

甫沙4井位于塔里木盆地塔西南坳陷昆仑山前冲断带的柯东构造带上，北部和东部分别发育有柯克亚和柯东1井油气田。为研究甫沙4井原油来源与充注过程，对原油样品和连续抽提后的含油砂样各组分（游离态、束缚态、包裹体）进行GC、GC?MS和 GC?IRMS分析，与柯克亚凝析油气田油样进行油—油对比。结果表明：甫沙4井晚期充注原油组分具有C_29?32重排藿烷、重排甾烷和Ts相对含量高，C_27?29甾烷ααα 20R分布呈反“L”型，以及正构烷烃单体碳同位素值较低等特征，与柯克亚凝析油气田来源于二叠系普司格组（P_2?3p）烃源岩的主体原油（I类）地球化学特征一致。而早期充注的原油组分具有重排藿烷、重排甾烷和Ts相对含量较低，C_27?29甾烷ααα 20R分布呈“V”型，以及正构烷烃单体碳同位素值较高等特征，与柯克亚凝析油气田来源于中—下侏罗统湖相泥岩的II类原油地球化学特征一致。甫沙4井经历3个阶段成藏过程：①在上新世，二叠系烃源岩于生油晚期阶段生成的I类原油运移至柯克亚构造带或柯东构造带深部形成油藏；②在更新世早期，侏罗系烃源岩于生油早—中期生成的II类原油运移至甫沙4井白垩系储层；③在第四纪，强烈的构造作用使深部I类原油沿断裂调整进入甫沙4井白垩系储层。最终造成甫沙4井白垩系储层II类原油先充注，I类原油后充注的特殊现象。     

填料类型与填充率对短程硝化的影响研究

研究不同填料类型与不同填充率对氨氮转化能力及亚氮积累效果影响。结果表明,在填充率相同的情况下,比表面积800 m²/m³的PE-03型号填料亚硝化效果最佳,氨氮转化50%,亚氮积累99%,PE-04型号填料比表面积1 200 m²/m³,相比于PE-03,氨氮转化降低5%、亚氮积累降低3%,PE-05型号填料比表面积510 m²/m³,相比于PE-03,氨氮转化30%、亚氮积累92%;随着填料填充率10%增加到30%,氨氮转化能力从20%增长至55%,之后再增加填充料,会小范围减小亚硝化能力,最低降至48%,由于该阶段亚硝化稳定运行,AOB优势生长,填充率的改变对亚氮积累率的影响不大。不同填料类型的影响研究中,PE-03型号的填料效果最佳;在填充率的考察中,随着同种填料填充率的增加,氨氮转化能力先增加后略微减小,对亚氮积累的情况影响较小;综合经济及技术因素,确定悬浮填料取材为PE-03型号,比表面积为800 m²/m³     

Good dielectric performance and broadband dielectric polarization in Ag,Nb co-doped TiO2

Due to the demand of miniaturization and integration for ceramic capacitors in electronic components market, TiO₂-based ceramics with colossal permittivity has become a research hotspot in recent years. In this work, we report that Ag⁺/Nb⁵⁺ co-doped (Ag_1/4Nb_3/4)_xTi_1−xO₂ (ANTOx) ceramics with colossal permittivity over a wide frequency and temperature range were successfully prepared by a traditional solid–state method. Notably, compositions of ANTO0.005 and ANTO0.01 respectively exhibit both low dielectric loss (0.040 and 0.050 at 1 kHz), high dielectric permittivity (9.2 × 10³ and 1.6 × 10⁴ at 1 kHz), and good thermal stability, which satisfy the requirements for the temperature range of application of X9R and X8R ceramic capacitors, respectively. The origin of the dielectric behavior was attributed to five dielectric relaxation phenomena, i.e., localized carriers' hopping, electron–pinned defect–dipoles, interfacial polarization, and oxygen vacancies ionization and diffusion, as suggested by dielectric temperature spectra and valence state analysis via XPS; wherein, electron-pinned defect–dipoles and internal barrier layer capacitance are believed to be the main causes for the giant dielectric permittivity in ANTOx ceramics.     

Study of pass band resonance characteristics of aperture type FSS

In this paper, the resonance characteristics of aperture type frequency selective surface (FSS) is presented. A systematic investigation is carried out to design the compact FSS. The optimized structure consists of rectangular Archimedean spiral with inter-digital capacitance. Resonance characteristics is verified in both single-layer as well as the double-layer approach by embedding FSS on one side of the dielectric substrate. The performances of the dual-layer are observed by varying air-gap between two FSS layers. The structure offers satisfactory resonance (transmission and reflection) characteristics at optimum air-gap of 7 mm between two layers with the 3 dB cutoff region over a frequency range (3.66–4.66 GHz). Finally, an array of 31 × 31 FSS elements of two layers is fabricated for experimental characterization. A close agreement between simulated and measured results is observed.     

A low power and low phase-noise 91~96 GHz VCO in 90 nm CMOS

This paper reports a 94 GHz CMOS voltage-controlled oscillator (VCO) using both the negative capacitance (NC) technique and series-peaking output power and phase noise (PN) enhancement technique. NC is achieved by adding two variable LC networks to the source nodes of the active circuit of the VCO. NMOSFET varicaps are adopted as the required capacitors of the LC networks. In comparison with the conventional one, the proposed active circuit substantially decreases the input capacitance (C_in) to zero or even a negative value. This leads to operation (or oscillation) frequency (OF) increase and tuning range (TR) enhancement of the VCO. The VCO dissipates 8.3 mW at 1 V supply. The measured TR of the VCO is 91~96 GHz, close to the simulated (92.1~96.7 GHz) and the calculated one (92.2~98.2 GHz). In addition, at 1 MHz offset from 95.16 GHz, the VCO attains an excellent PN of – 98.3 dBc/Hz. This leads to a figure-of-merit (FOM) of ?188.5 dBc/Hz, a remarkable result for a V- or W-band CMOS VCO. The chip size of the VCO is 0.75 × 0.42 mm², i.e. 0.315 mm².     

PAM-粉煤灰体系在煤泥水絮凝沉降过程中的作用及机理

以煤泥水COD、SS、动电位、污泥比阻为切入点,分析了煤泥水的特点及难以絮凝沉降的原因,并研究了PAM-粉煤灰体系在混凝沉降作用中的机理。研究结果表明:PAM-粉煤灰法在最优条件下,清水分离率47%、沉降速度0.357 mm/s;上清液:pH=7.35,SS=55.57 mg/L,COD=37.72 mg/L;污泥比阻为0.062×10^15 m/kg,满足煤泥水循环标准。     

正电子湮没研究Al、Nb共掺CaCu3Ti4O12陶瓷高介电常数机理

关于CaCu₃Ti₄O₁₂陶瓷的高介电常数机理，目前广泛接受的是非本征的内阻挡层电容模型。该模型认为在多晶中元素变价、缺陷和非化学计量比等导致的半导化晶粒被绝缘晶界层，即内阻挡层所包围。其中内阻挡层的厚度对材料的介电性能影响较大，而扫描电子显微镜（SEM）测试表明样品晶界呈稀烂的果酱状，SEM难以测量晶界区域绝缘内阻挡层厚度。本文采用正电子湮没技术表征其厚度，通过对CaCu₃Ti₄O₁₂陶瓷共掺不同浓度的Al、Nb（CaCu₃Ti_4-xAl_0.5xNb_0.5xO₁₂，x=0.2%、0.5%、5.0%）改变其晶粒和晶界的微观结构，研究CaCu₃Ti₄O₁₂陶瓷高介电常数机理。正电子湮没结果显示，掺杂样品符合多普勒展宽谱S参数的变化趋势与平均寿命的变化趋势一致。x=0.5%掺杂样品的介电常数最高，其平均寿命、S参数和湮没长寿命成分均最小，阻挡层最薄。实验结果验证了描述CaCu₃Ti₄O₁₂陶瓷高介电常数机理的内阻挡层电容模型的预测。     

Waste sugar solution polymer-derived N-doped carbon spheres with an ultrahigh specific surface area for superior performance supercapacitors

Waste sugar solution (WSS), a waste by-product of manufacturing vitamin C, contains abundant waste acids and organics. In this work, a N/O-enriched copolymer was synthesized via a facile polymerization via the hydrogen bonding of O-containing functional groups and melamine and the crosslinking of aldehyde groups. Subsequently, N-doped carbon spheres were prepared by a typical carbonation/activation method. Remarkably, benefiting from an ultrahigh specific surface area (3612 m²/g) and rich heteroatom content (4.3% for N, 8.8% for O), the carbon spheres deliver a high specific capacitance of 387 F/g at 50 mA/g and 283 F/g at 5 A/g with 6 M KOH in two-electrode system. The assembled symmetric electric double-layer capacitor exhibits high energy density of 10.83 Wh/kg at 11.10 W/kg. This research provides a facile method for preparing N/O-doped carbon spheres by WSS, and confirms the excellent electrochemical performance of WSS-derived carbons in energy storage applications.     

反演法求小麦面团在冻结温度范围内的热导率

为确定小麦面团在冻结温度范围内的热导率,采用差式量热扫描法测量了3个不同水分含量面团的比热,然后利用COMSOL软件反演求出面团在-30~30℃范围内的热导率。结果表明,面团热导率随水分含量增大(38%~44%)而逐渐升高;且随着温度的降低,面团的热导率逐渐降低,但是当面团的温度降至冰点后,面团的热导率急剧上升,然后又呈缓慢上升趋势。通过对面团热导率与水分含量关系的进一步分析,建立了速冻温度范围内面团热导率随温度和水分含量变化的数学模型。     

基于特定致腐菌的调理肉饼货架期预测模型构建

为建立调理肉饼中特定致腐菌的货架期预测模型。将特定致腐菌乳酸菌接种于经臭氧减菌化处理的调理肉饼中,真空包装后分别于-1℃、4℃、10℃、15℃和22℃条件下(温度波动为±1℃)贮藏,在贮藏期间(0～11 d)测定调理肉饼挥发性盐基氮值、pH值、硫代巴比妥酸值及菌落总数等指标,并进行感官评价,利用修正的Gompertz方程和平方根模型(B?lehrádek),建立以特定致腐菌乳酸菌为关键品质因子的调理肉饼微生物货架期模型。结果表明:修正的Gompertz方程能较好地拟合不同贮藏温度下微生物的生长曲线,应用平方根模型(B?lehrádek)描述温度对最大比生长速率(μ_(max))和迟滞期(Lag)的影响,均表现出良好的线性关系(R~2分别为0.98和0.83)。调理肉饼在-1℃、4℃、10℃、15℃和22℃下乳酸菌货架期最小腐败量对数平均值为(6.94±0.21) lg(cfu/g),平均最大菌数对数值为(8.65±0.16)lg(cfu/g),得到了在-1℃～22℃贮藏温度下调理肉饼的货架期预测模型。预测模型通过10℃和15℃贮藏温度下的货架期实测值来进行验证,相对误差均小于10%,表明基于平方根方程建立的模型可以有效地预测调理肉饼在-1℃～22℃贮藏温度条件下的特定致腐菌乳酸菌的货架期。