吸湿凉爽机织物的结构设计与性能

为研究织物组织结构与复合纱线线密度对织物凉爽性能的影响,将线密度为7.4和9.8 tex涤纶分别与线密度为7.8 tex锦纶反向加捻、并线后作为纬纱,以8.3 tex涤纶/竹浆纤维50/50混纺纱作经纱,设计平纹、二上一下斜纹和透孔组织织物.测试织物的瞬间接触凉感、热湿舒适性能及织物干、湿态升温曲线,并采用凉爽温度指数对织物的综合凉爽性能进行评价.研究结果表明:6种设计织物的瞬间接触凉感均高于标准,且平纹织物最好,纬纱粗细对瞬间接触凉感影响不显著;透孔织物透气性最好,且在人体出汗的状态下具有较好的导湿散热性能.平纹织物凉爽温度指数最高,最大凉爽温度为2.8℃,综合凉爽性能最好.     

Distributed hybrid P2P networking systems

Peer-to-Peer Networking and Applications -     

离心泵并联运行工况点的数值求解

建立了求解多台不同型号离心泵并联运行工况点的数学模型,给出了用数值计算中的“二分法”求解该模型的方法,并附有用Exce l计算的实例。     

Effects of surface charge, micro-bubble size and particle size on removal efficiency of electro-flotation.

Flotation is a water treatment alternative to sedimentation, and uses small bubbles to remove low-density particles from potable water and wastewater. The effect of zeta potential, bubble size and particle size on removal efficiency of the electro-flotation process was investigated because previous model-simulations indicated that these attributes are critical for high collision efficiency between micro-bubbles and particles. Solutions containing Al3+ as the metal ion were subjected to various conditions. The zeta potentials of bubbles and particles were similar under identical conditions, and their charges were influenced by metal ion concentration and pH. Maximum removal efficiency was 98 and 12% in the presence and absence of flocculation, respectively. Removal efficiency was higher when particle size was similar to bubble size. These results agree with modelling simulations and indicate that collision efficiency is greater when the zeta potential of one is negative and that of the other is positive and when their sizes are similar.     

A high-performance multichannel dual-gate poly-Si TFT fabricated by excimer laser irradiation on a floating a-Si thin film

A new excimer laser annealing (ELA) process that uses a floating amorphous-Silicon (a-Si) thin film with a multichannel structure is proposed for high-performance poly-Si thin-film transistors (TFTs). The proposed ELA method produces two-dimensional (2-D) grain growth, which can result in a high-quality grain structure. The dual-gate structure was employed to eliminate the grain boundaries perpendicular to the current flow in the channel. A multichannel structure was adapted in order to arrange the grain boundary to be parallel to the current flow. The proposed poly-Si TFT exhibits high-performance electrical characteristics, which are a high mobility of 504 cm/sup 2//Vsec and a low subthreshold slope of 0.337 V/dec.