Investigation of post-thermal annealing on material properties of Cu-In-Zn-Se thin films

The Cu-In-Zn-Se thin film was synthesized by changing the contribution of In in chalcopyrite CuInSe2 with Zn.The XRD spectra of the films showed the characteristic diffraction peaks in a good agreement with the quaternary Cu-In-Zn-Se compound.They were in the polycrystalline nature without any post-thermal process,and the main orientation was found to be in the (112) direction with tetragonal crystalline structure.With increasing annealing temperature,the peak intensities in preferred orientation became more pronounced and grain sizes were in increasing behavior from 6.0 to 25.0 nm.The samples had almost the same atomic composition of Cu0.5In0.5ZnSe2.However,EDS results of the deposited films indicated that there was Se re-evaporation and/or segregation with the annealing in the structure of the film.According to the optical analysis,the transmittance values of the films increased with the annealing temperature.The absorption coefficient of the films was calculated as around 105 cm-1 in the visible region.Moreover,optical band gap values were found to be changing in between 2.12 and 2.28 eV depending on annealing temperature.The temperature-dependent dark-and photo-conductivity measurements were carried out to investigate the electrical characteristics of the films.     

两种基于MEMS谐振器的原子力显微镜探针

目前商用原子力显微镜(AFM)大多使用的微悬臂式探针,力灵敏度可达到pN级别。然而受到工艺水平及检测方法限制,微悬臂谐振频率难以超过3.5 MHz,且Q值较低,制约了AFM的成像速度以及在液体中的成像效果。另外,光杠杆的检测方法无法与探针本身进行片上集成,较小的悬臂也给激光束的聚焦带来困难。基于以上考虑,本文提出两种基于MEMS谐振器的探针,振频率可达11 MHz,Q值为4 000,并集成了执行与传感功能以及批量加工纳米针尖的工艺。目前两种探针都已经实现对树脂图案的成像功能,力灵敏度最高可达5pN/√Hz。     

Effect of amorphous SiC layer on electrical and optical properties of Al/a-SiC/c-Si Schottky diode for optoelectronic applications

Journal of Materials Science: Materials in Electronics - In this work, we report on the study of the electrical and optical properties of amorphous silicon carbide (a-SiC)-based Schottky diodes for...