Electrical oscillation generation with current-induced resistivity switching in VO2 micro-channel devices

We report large amplitude modulation waveforms as large as ~ 10 V using vanadium dioxide micro-channel devices operating under current-controlled conditions. The self-sustained electrical oscillations were generated by controlling the applied current in the negative differential resistance region of the investigated devices. An appropriate value of internal capacitance was achieved as parasitic capacitance in the device structure to stabilize the electrical oscillations. This eliminates the need of an external pulsed source or any external passive component connected to the micro-channel devices. Amplitude and frequency of the oscillation were tuned by illuminating the device micro-channel with an external laser. An equivalent circuit model was developed to simulate the waveforms. A good agreement between experiment and simulation was verified.     

Influences of Mn doping on the microstructural,semiconducting, and optoelectronic properties of HgO nanostructure films

Mn-doped HgO nanostructured thin films (Hg_1-xMn_xO) have been prepared using electron beam evaporation technique on Corning glass (1022) substrate at room temperature with different concentrations x = 0, 0.015, 0.05, 0.1, 0.15, and 0.2. The microstructural, morphological, semiconducting, and optoelectronic properties of the films have been investigated. The X-ray diffraction spectra suggest a hexagonal wurtzite type structure with lattice parameters decreased with increasing Mn content. It was found that the average particle size of the films decreases with increasing Mn doping which is confirmed by FE-SEM and AFM micrographs. The optical band gap of the investigated Mn-doped HgO nanocrystalline films is determined from the absorption coefficient and found to increase with the increase of Mn concentration which is attributed to the sp-d exchange interaction and/or the quantum confinement effect. The refractive index and extinction coefficient of the Mn-doped HgO films are also reported. The refractive index dispersion n(λ) is analyzed by single-effective-oscillator dispersion model proposed by the Wemple–DiDomenico (WDD). The oscillator parameters were estimated. The obtained dispersion values are suitable for the design of optoelectronic devices.     

频率可调太赫兹回旋振荡管互作用电路的设计与研究

根据动态核极化核磁共振成像技术对回旋振荡管的要求,设计了130 GHz 回旋振荡管的注波互作用电路,基于线性理论对互作用电路进行了研究并选择了合适的工作点,分析了电路的频率调节特性。利用相对论电子回旋脉塞非线性理论对互作用系统进行了模拟和计算,优化了工作参数,计算了磁场及电子注参数对输出功率及效率的影响。最后,用粒子模拟方法进行了模拟并与非线性理论结果进行了比较,两者符合得很好。模拟结果显示,当电压为10 kV、电流为0.3 A、磁场强度由2.34 T 增加到2.41 T 时,输出功率由1310 W 减小到230 W,对应的效率分别为43.6%和7.7%,振荡管的频率可调范围约为2.7 GHz。     

应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

基于FPGA的高速软件无线电数字解调模块的分析

主要对载波恢复COSTAS环法中的NCO与数字滤波器进行了介绍 ,并对FPGA芯片的优缺点进行了简单的分析 ,使该模块能有效的完成载波恢复功能。     

混沌振子识别轴承早期故障的极半径不变矩判据

现有的基于混沌振子检测轴承故障的方法的关键步骤是混沌振子相态转变判别,目前大多采用李雅普诺夫指数等特征值进行判断,针对其计算过程复杂,耗费时间长的缺点,基于图像识别技术,提出了一种以极半径不变矩参数作为相态转变的识别方法。通过构造Duffing混沌振子,分析了其相态转变与周期策动力的变化关系,证明其用于轴承早期故障识别的可行性;给出了极半径不变矩的定义,并证明在混沌振子相图由混沌运动态向大尺度周期态转变的过程中,随着周期摄动力不断增加,极半径不变矩表现出单调递增的特性;与HU氏不变矩及二维近似熵判别方法进行对比,讨论了极半径不变矩的抗噪声干扰能力;最终,将该方法用于实际搭建的钻机动力头轴承早期故障诊断的试验中。试验结果表明:极半径不变矩可以识别混沌振子相态过程转变,最低检测信噪比达到-36.99dB,且识别准确率也较另外两种方法提高了4%~7%。证明该方法可以用于轴承早期故障识别,具有识别准确率高,抗噪声干扰能力强,计算简便的优点。     

Microbubble generator excited by fluidic oscillator's third harmonic frequency

Efficient generation of sub-millimetre microbubbles was recently made possible by pulsating the flow of gas supplied into a parallel-exits aerator, using a fluidic oscillator for the purpose. Without moving parts, it can generate oscillation at high frequency, an important factor due to bubble natural frequency rapidly increasing with the desirable decrease of their size. This paper discusses development of an unusual oscillator – a part of an integral oscillator/aerator unit – capable of generating a particularly high driving frequency, in the kilohertz range, in a layout that promotes a strong third harmonic frequency of the basic oscillation.     

传热管在内外流体作用下的振动特性研究

为研究传热管在内外流体共同作用下的动力学行为,引入尾流振子模型,同时考虑轴向伸长引起的几何非线性的影响,建立了弹性管-内外流体耦合系统的分析模型,并利用Galerkin方法离散非线性耦合方程。基于数值计算,分析了内外流体流速、几何非线性参数对传热管振动响应的影响,得到了传热管在后屈曲时的分叉图、相图。结果显示,传热管在后屈曲时会表现出一系列丰富的动力学行为,如倒分叉、周期运动和混沌运动。     

基于改进EEMD与混沌振子的配电网故障选线

提出改进的集合经验模态分解(MEEMD)和混沌振子相结合的电网故障微弱信号检测方法。首先,建立神经网络预测模型,通过神经网络对配网各线路零序电流进行短时预测,滤除故障信号中的背景信号;其次,为了检测配网发生单相接地故障后微弱的5次谐波信号,提出结合多尺度排列熵和完备集合经验模态分解(CEEMD)改进的改进的集合经验模态分解算法;处理已经滤除背景信号的故障信号,提取其第一固有模态函数作为混沌振子的输入。混沌振子对和内驱动力信号同频的外策动力信号有较高的敏感性,通过混沌振子输出的相图完成电网故障选线。     

New sinusoidal oscillator configurations using operational transresistance amplifier

The objective of this brief is to introduce four new structures of electronically tunable sinusoidal oscillators (SOs) designed using operational transresistance amplifier (OTRA). Each of the proposed SO consists of forward path derived from a generic structure along with one/two OTRA-based resistive gain stages or differentiator in its feedback path. All the proposed SOs enjoy independent tuning of the frequency of oscillation (FO) through resistors without affecting the condition of oscillation (CO). Further, all topologies are found to exhibit low f_o sensitivities at all frequencies with respect to circuit parameters, and the second topology is capable of achieving very low frequencies (VLFs) using less RC component spread and provides linear tuning too. The fourth circuit provides quadrature output. The proposed SOs have been successfully implemented and verified in 180-nm CMOS technology node using ADE (analog design environment) tool Cadence Virtuoso. Both prelayout and postlayout simulation results have been included. To assess the oscillator prefabrication performances, Monte Carlo and process-voltage-temperature (PVT) analyses have been performed. The total harmonic distortion (THD) is observed to be less than 3.5%.