Polyaniline encapsulated Ti-MOF/CoS for efficient photocatalytic hydrogen evolution

We report the study of conductive polyaniline (PANI) chain embedded Ti-MOF functionalized with CoS as a cocatalyst for hydrogen evolution reaction (HER) application. The post synthetically modified hybrid photocatalyst PANI/Ti-MOF/CoS greatly influences the redox and e^? ? h⁺ separation process and exhibits an impressive rate of HER (～1322 μmol h^?1g^?1), suppressing the pristine Ti-MOF (～62 μmol h^?1g^?1) with apparent quantum yield (AQY) of ～3.2 and transient current response of ～46.4 μA cm^?2. In this system, Ti-MOF provides the circulation of Ti³⁺ and Ti⁴⁺ to the reaction of photocatalytic H₂ generation, where the additional PANI and CoS amended the performance of H₂ production through electron enrichment and thereby improving the stability and integrity of Ti-MOF. The Electrochemical studies demonstrated increased photocurrent by interweaving Ti-MOF crystal with PANI through cation-π interaction thereby enhancing interface connection and then promoting electron transfers. The charge dynamics revealed the initial charge transfer from photoexcited PANI to encapsulated MOF framework to boost the photocatalytic performance of the system. Further, the electron movement at the Ti-MOF/CoS interface is investigated through work function and electrochemical potential of electrons (Fermi level). DFT results demonstrate the importance of CoS in improving the photocatalytic performance of hybrid Ti-MOF catalyst, which leads to superior catalytic behaviour. These results establish that the encapsulation of catalytic active sites inside MOFs with desirable energy band gaps would be an ideal choice for the production of solar fuels.     

接触器触头系统振动机理分析及算法优化

为了解决合闸过程中动、静触头接触引起的振动弹跳问题.本文建立了接触系统的二自由度运动微分方程,并利用遗传算法对交流接触器吸合过程进行优化,同时通过高速摄影实验对接触弹跳的全过程进行了观察和分析.结果表明:理论与实验结果高度一致,铁心在触头分离前发生碰撞,进一步加剧触头弹跳;铁芯弹跳再次碰撞时,触头的弹跳不受影响;在接触器运行过程中,动铁芯的运动会引起系统轻微振动;采用遗传算法优化的接触器触头弹跳时间和最大振幅均减小.研究结果为进一步控制和减小接触弹跳提供了理论依据.     

某矿快速掘进最优炮孔间距的选择

山西某矿5308底抽巷在掘进过程中速度慢、效率低，直接影响工作面的瓦斯抽采，为了改善上述情形，对炮孔间距进行研究。通过使用ANSYS软件对不同炮孔间距下快速掘进效果的模拟分析，并经现场验证，得出了适应该矿的最佳炮孔间距。结果表明：炮孔间距为500 mm时，爆破产生裂隙发育范围和岩石损伤区域都最大，快速掘进的效果最好。     

雷达发射机浮动板调制器与故障检测电路的设计

提出了一种改进的浮动板调制器和对正负偏电压的故障检测电路,利用MOSFET寄生电容特性,通过固定脉宽窄脉冲控制调制脉宽,通过增加负偏MOSFET提高输出负偏电压。对故障检测电路进行仿真实验,通过模拟故障,验证故障检测报警信号发生时间均在微秒级别。完成样机的搭建,利用多重方式解决高压绝缘问题,并对其加电进行试验验证,分析实验波形,证明此电路满足设计要求并且具有可行性。     

Effect of temperature on fast forging process of Mg-Ni samples for fast formation of Mg2Ni for hydrogen storage

Fast-Forging was used as a Severe Plastic Deformation technique to process Mg/Ni fine powder mixtures at a ratio corresponding to the eutectic composition. The samples were processed at different temperature, increased successively from room temperature up to above 500 °C. The one shock forging operation led to a reduction rate comprised between 80 to more than 90% depending of the applied temperature. Interestingly, a threshold temperature was pointed out for which amounts of the binary Mg₂Ni alloy were directly synthesized in increasing proportions when increasing temperature. A maximum amount of Mg₂Ni was synthesized according the nominal proportions at the highest applied temperature. Besides, numerical simulations were developed to consider and integrate to the forging process, the heat arising from the mechanical energy at deformation. Interestingly the total temperature at shock – heat applied to and heat developed in – indicates that the threshold temperature correspond well with the eutectic temperature as reported in the phase diagram. Early hydrogenation cycles suggest that both mechanical defects in brittle Mg and presence of amounts of Mg₂Ni as catalyst should be combined to optimize the hydrogenation characteristics.     

Compiler compatible 5.66 Mb/mm2 8T 1R1W register file in 14 nm FinFET technology

1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm² is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm² array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall V_min of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances.     

Development of a fast atom beam gun for surface-activated bonding

Surface-activated bonding (SAB), also called room-temperature bonding, is used in three-dimensional integration technology for semiconductor devices. An Ar fast atom beam (FAB) is used for SAB. However, conventional FAB guns must be replaced after hundreds of minutes of irradiation because carbon abrasion powders are generated by Ar ions sputtering in the gun. Therefore, this study develops a novel FAB gun with improved lifetime. The proposed FAB gun applies magnetic fields to guide Ar ions to reduce sputtering in the gun and improve irradiation efficiency. The proposed FAB gun indicates the possibility of improving gun lifetime.     

GIS气体高压开关在阳煤五矿变电站的应用

针对阳煤五矿广场变电站的高压开关老化问题,为了保证安全性,采用了GIS气体的高压绝缘开关进行了改造。在改造后,变电站的安全性得到了显著提高,设备运行可以节省成本200多万元。     

矿用组合开关保护系统研究

简要介绍了本安先导电路的判定及继电器隔离方式的本安先导电路原理,运用3种方法分析了矿井低压电网漏电故障,最后在此基础上,从组合开关对电压保护、短路保护和过载保护三个方面,详细探讨了基于组合开关的矿井低压电网保护,相信可以通过多方面的综合分析研究出更可靠、保护更加全面和智能的组合开关,从而为中国井下煤矿的安全机械化开采提供更有保障的服务。     

基于深度概率图模型的鲁棒人脸画像合成

针对基于数据驱动的人脸画像合成算法像素特征缺乏对光照变化和复杂背景的鲁棒性,常合成低质量的画像的问题,文中提出基于深度概率图模型的鲁棒人脸画像合成算法.采用预处理方法调整测试照片的光照亮度和人脸姿态,使之与训练照片一致.采用深度特征代替像素特征进行近邻匹配,采用深度概率图模型对画像重建权重和深度特征权重联合建模,得到合成画像的最佳重构表示.为了提高画像合成速度,提出快速近邻搜索方法.实验验证文中算法的鲁棒性和快速性.