GaN中质子辐照损伤的分子动力学模拟研究

本文利用分子动力学方法研究了GaN在质子辐照下的损伤。对不同能量（1~10 keV）初级离位原子（PKA）引起的级联碰撞进行了研究，分析了点缺陷与PKA能量的关系、点缺陷随时间的演化规律、点缺陷的空间分布及点缺陷团簇的尺寸特征。研究结果表明，点缺陷的产生与PKA能量呈线性关系，不同类型的点缺陷随时间演化规律相似，点缺陷多产生在PKA径迹旁，点缺陷团簇多为孤立的点缺陷和小团簇。     

Low-threshold lasing in a plasmonic laser using nanoplate InGaN/GaN

Plasmonic nanolaser as a new type of ultra-small laser,has gain wide interests due to its breaking diffraction limit of light and fast carrier dynamics characters.Normally,the main problem that need to be solved for plasmonic nanolaser is high loss induced by optical and ohmic losses,which leads to the low quality factor.In this work,InGaN/GaN nanoplate plasmonic nanolaser with large interface area were designed and fabricated,where the overlap between SPs and excitons can be en-hanced.The lasing threshold is calculated to be ～6.36 kW/cm2,where the full width at half maximum (FWHM) drops from 27 to 4 nm.And the fast decay time at 502 nm (sharp peak of stimulated lasing) is estimated to be 0.42 ns.Enhanced lasing charac-ters are mainly attributed to the strong confinement of electromagnetic wave in the low refractive index material,which im-prove the near field coupling between SPs and excitons.Such plasmonic laser should be useful in data storage applications,bio-logical application,light communication,especially for optoelectronic devices integrated into a system on a chip.     

Improving performance of high-power indium gallium nitride/gallium nitride-based vertical light-emitting diodes by employing simple n-type electrode pattern

In this work, simple n-type electrode structures were used to enhance the electrical and optical performances of fully packaged commercially mass-produced vertical-geometry light-emitting diodes (VLEDs). The forward bias voltage of the VLED with a Y-pattern electrode increased less rapidly than that of VLEDs with a reference electrode. The VLEDs with the reference and Y-pattern electrodes exhibited forward voltages of 2.93±0.015 and 2.89±0.015 V at 350 mA and 3.77±0.015 and 3.53±0.015 V at 2000 mA, respectively. The VLEDs with the Y-pattern electrode resulted in a higher light output than the VLEDs with the reference electrode with increase in the drive current to 2000 mA. The emission images showed that the VLEDs with the Y-pattern electrode exhibited better current spreading behavior and lower junction temperatures than the VLEDs with the reference electrode. With increase in the current from 350 to 2000 mA, the VLEDs with the Y-pattern electrode experienced a 39.4% reduction in the wall plug efficiency, whereas the VLEDs with the reference electrode suffered from a 43.3% reduction.     

Investigation of light output performance for gallium nitride-based light-emitting diodes grown on different shapes of patterned sapphire substrate

GaN-based blue light-emitting diodes (LEDs) on various patterned sapphire substrates (PSSs) are investigated in detail. Hemispherical and triangular pyramidal PSSs have been applied to improve the performance of LEDs compared with conventional LEDs grown on planar sapphire substrate. The structural, electrical, and optical properties of these LEDs are investigated. The leakage current is related to the crystalline quality of epitaxial GaN films, and it is improved by using the PSS technique. The light output power and emission efficiency of the LED grown on triangular pyramidal PSS with optimized fill factor show the best performance in all the samples, which indicates that the pattern structure and fill factor of the PSS are related to the capability of light extraction.     

GaN/Surface-modified graphitic carbon nitride heterojunction: Promising photocatalytic hydrogen evolution materials

The coupling of two-dimensional (2D) layered materials is an effective way to realize photocatalytic hydrogen production. Herein, using first-principles calculations, the photocatalytic properties of GaN/CNs heterojunctions formed by two different graphite-like carbon nitride materials and GaN monolayer are discussed in detail. The results show that the GaN/C₂N heterojunction can promote the effective separation of photogenerated electron and hole pairs, which is attributed to its type-II band orientation and high carrier mobility. However, the low overpotential of GaN/C₂N for photocatalytic hydrogen production limits the photocatalytic performance. On this basis, we adjust the CBM position of the GaN/C₂N heterojunction by applying an electric field to enhance its hydrogen evolution capability. In addition, the GaN/g-C₃N₄ is a type-I heterojunction, which is suitable for the field of optoelectronic devices. This work broadens the field of vision for the preparation of highly efficient photocatalysts.     

RF-MBE生长的高Al势垒层AlGaN/GaN HEMT结构

采用RF-MBE技术,在蓝宝石衬底上生长了高Al组分势垒层AlGaN/GaN HEMT结构.用三晶X射线衍射分析得到AlGaN势垒层的Al组分约为43%,异质结构晶体质量较高,界面比较光滑.变温霍尔测量显示此结构具有良好的电学性能,室温时电子迁移率和电子浓度分别高达1246cm2/(V·s)和1.429×1013cm-2,二者的乘积为1.8×1016V-1·s-1.用此材料研制的器件,直流特性得到了提高,最大漏极输出电流为1.0A/mm,非本征跨导为218mS/mm.结果表明,提高AlGaN势垒层Al的组分有助于提高AlGaN/GaN HEMT结构材料的电学性能和器件性能.     

GaN基紫外光探测器的研究进展

相对于其他类型的探测器,GaN基紫外光探测器具有很多优点.本文主要介绍了近几年GaN基紫外光探测器的发展,并对各种结构形式进行了比较.     

AlGaN/GaN HEMT高跨导特性的研究

报道了蓝宝石衬底、栅长为0.3 μ m AlGaN/GaN HEMT器件的制备,在未采用散热设备的条件下测得栅宽为100μ m器件的饱和电流为55.9mA,最大源漏电流为92.1mA.对器件的跨导特性进行了对比,得到最大跨导为306mS/mm的器件.同时对器件进行了微波小信号测试,推导出截止频率fT和最高振荡频率fmax分别为18.5GHz和46GHz.     

蓝宝石衬底上侧向外延GaN中的位错降低

采用侧向外延(ELOG)方法,在制作了条形掩膜图形的GaN衬底上用MOCVD生长高质量GaN.AFM,化学湿法腐蚀及TEM分析表明:采用两步法ELOG生长的GaN中,掩膜下方的缺陷被掩膜所阻挡,窗口区内二次生长的GaN的位错也大幅降低;在相邻生长前沿所形成的合并界面处形成晶界;化学湿法腐蚀无法得到关于合并界面处缺陷的信息.侧翼区域中极低的穿透位错使得ELOG GaN适用于在其上制作高性能的氮化物基激光器.