毫米波三维异质异构集成技术的进展与应用

三维异质异构集成技术是实现电子信息系统向着微型化、高效能、高整合、低功耗及低成本方向发展的最重要方法,也是决定信息化平台中微电子和微纳系统领域未来发展的一项核心高技术。文章详细介绍了毫米波频段三维异质异构集成技术的优势、近年来的发展趋势以及面临的挑战。利用硅基MEMS 光敏复合薄膜多层布线工艺可实现异质芯片的低损耗互连,同时三维集成高性能封装滤波器、高辐射效率封装天线等无源元件,还能很好地处理布线间的电磁兼容和芯片间的屏蔽问题。最后介绍了一款新型毫米波三维异质异构集成雷达及其在远距离生命体征探测方面的应用。     

高光谱激光雷达谱位合一的角度效应分析

高光谱激光雷达以其谱位合一的技术优势为实现超三维精准遥感观测提供了可行途径,因此成为当前激光雷达与高光谱遥感领域共同大力推进的前沿发展方向。目前已有多型原型系统研发出来并得到了原理性验证,然而针对其数据处理核心环节问题的基础技术仍较为欠缺。典型问题之一是不同波段回波信号受激光入射角度的影响,该角度效应限制了高光谱激光雷达实现高性能遥感。以芬兰空间信息研究所高光谱激光雷达原型系统扫描桦树树干为例探讨了该角度效应,发现了不同激光波段对不同入射角度的回波强度响应模式,推导出了角度效应的基本规律及其精细尺度的统计规律,为后续该方向的系统研发、数据处理及信息提取等提供了可借鉴的底层机理与技术基础。     

应用于车载激光雷达的宽带AGC跨阻放大器

针对车载激光雷达接收端脉冲信号脉宽窄、动态范围大等特点,提出了一种新型宽带、宽动态范围和高增益的自动增益控制(AGC)跨阻放大器。采用改进型调节型共源共栅结构作为输入级,拓展了带宽。使用改进型吉尔伯特单元作为可变增益放大器,进一步提高了带宽和增益。增加了AGC环路,提高了输入动态范围。基于标准 0.18 μm CMOS工艺进行设计与仿真,整体版图尺寸为760 μm×650 μm。仿真结果表明,该电路的-3 dB带宽为1.06 GHz,跨阻增益为80.79 dBΩ,输入动态范围为60 dB(1 μA~1 mA),功耗为47.6 mW,满足车载激光雷达接收机的要求。     

High sensitivity nanostructure incorporated interdigital silicon based capacitive accelerometer

Interdigital structures are realized on silicon substrates with high sensitivity to acceleration. The process employs a combination of anisotropic back-side micromachining with front-side vertical deep reactive ion etching of silicon. The incorporation of silicon-based nano-structures on the vertical planes of fingers leads to a significant increase in the capacitance of the device from 0.45 for simple planes to 40 pF for the nano-structured planes. Such structures show high sensitivity to inclination and accelerations, which could be due to field emission of electrons from nano-metric features. Around 8% change in the capacitance is observed upon a tilting sensor from 0° to 90° angle, which makes it proper for possible use as an earthquake sensor. A preliminary model for the capacitance and its dependence on the measurement voltage is presented.     

多层圆片级堆叠THz硅微波导结构的制作

基于微电子机械系统(MEMS)工艺,提出一种多层圆片堆叠的THz硅微波导结构及其制作方法。为了验证该结构在制作THz无源器件中的优势,基于6层圆片堆叠的硅微波导结构,设计了一种中心频率365 GHz、带宽80 GHz的功率分配/合成结构,并对其进行了仿真。研究了制作该结构的工艺流程,攻克了工艺过程中的关键技术,包括硅深槽刻蚀技术和多层热压键合技术,并给出了工艺结果。最终实现了多层圆片堆叠功率分配/合成结构的工艺制作和测试。测试结果表明,尽管样品的插入损耗较仿真值增加3 dB左右,考虑到加工误差和夹具损耗等情况,样品主要技术指标与设计值较为一致。     

不同结构石墨烯发声器的热声效率

为了研究不同石墨烯发声器结构对热声效率的影响,建立了石墨烯发声器的声压解析模型,对单层石墨烯发声器、多层石墨烯发声器以及镍铬基的泡沫石墨烯发声器的发声效率进行了理论与实验研究。首先,介绍了石墨烯发声器的工作原理,建立了石墨烯发声器的周期性温度变化模型和声压解析模型。然后,实验研究了单层石墨烯发声器、多层石墨烯发声器以及镍铬基的泡沫石墨烯发声器的热声效率。实验结果表明在14~25 kHz内,施加6 V交流电,测距为6 cm的条件下,单层、多层和泡沫石墨烯发声器的最高SPL分别为35.19,20.36和33.42 dB,SPL理论值最高约为37.45 dB。具有较低电阻,较低比热容,较高导热率的石墨烯发声器可以获得较高的热声效率和声压。     

Calibration of low-pressure MEMS gas sensor for detection of hydrogen gas

Detection of hydrogen by sensors are significant for improvement and safe usage of hydrogen gas as an energy source. In this paper, the application of the MEMS gas sensor for detection of hydrogen gas is numerically studied to develop the application of this device in different industrial applications. The flow feature and force generation mechanism inside a rectangular enclosure with heat and cold arms as the non-isothermal walls are inclusively discussed. In this study, the pressure of hydrogen is varied from 62 to 1500 pa correspond to Knudsen number from 0.1 to 4.5 to investigate all characteristics of the thermal-driven force inside the MEMS sensor. In order to simulate a rarefied gas inside the micro gas detector, Boltzmann equations are applied to obtain high precision results. To solve these equations, Direct Simulation Monte Carlo (DSMC) approach is used as a robust method for the non-equilibrium flow field. The effects of length, thickness and temperature of arms are comprehensively investigated in different ambient pressures. In addition, the effect of various hydrogen concentrations on the Knudsen force is studied. Our findings show that maximum Knudsen force occurs at P = 387 pressure and intensifies when the length of the arms is increased from 50 μm to 150 μm. In addition, the obtained results demonstrate that the generated force is highly sensitive to hydrogen gas species and this enables device for detection of hydrogen gas.     

A New Design Methodology for Time-Based Capacitance-to-Digital Converters (T-CDCs)

This paper introduces a 9-bit time-based capacitance-to-digital converter (T-CDC). This T-CDC adopts a new design methodology for parasitic cancellation with a simple calibration technique. In T-CDCs, the input sensor capacitance is first converted into a delay pulse using a capacitance-to-time converter (CTC) circuit; then this delay signal is converted into a digital code through a time-to-digital converter (TDC) circuit. A prototype of the proposed T-CDC is implemented in UMC 0.13 μm CMOS technology. This T-CDC consumes 8.42 μW and achieves a maximum SNR of 45.14 dB with a conversion time of 1 μs that corresponds to a figure of merit (FoM) of 16.4 fJ/Conv.     

Electromagnetic silicon MEMS resonator

We have fabricated a silicon MEMS resonator aiming at multimodal sensors, and evaluated vibration characteristics by electromagnetic drive and induced electromotive force detection. The resonance frequency of the driving voltage of 0.6 Vpp shows torsional vibration of approximately 87 kHz, and the resonance frequency is shifted toward the low‐frequency side as the driving voltage increases. Resonance characteristics due to temperature change and film stress were evaluated.