Electrical and optical analyses of trapping phenomenon with temperature dependence of organic device

Carrier mechanism in actual organic devices is not simple, owing to the dielectric nature of active organic semiconductor layers, the complexity of the organic device interface, carrier trapping effects by stress biasing, and others. By coupling the conventional electrical measurement, e.g., current–voltage, capacitance–voltage and capacitance-frequency measurements, with optical charge modulation spectroscopy (CMS) measurement, we studied the hysteresis behavior and the temperature dependence of indium tin oxide/polyimide/6,13-Bis(triisopropylsilylethynyl)pentacene(TIPS-pentacene)/Au diodes to understand the effect of carrier trapping caused by injected carriers. The coupled electrical and optical measurements were very helpful to clarify carrier injection that was followed by carrier trapping in the diode, in terms of hysteresis behavior. CMS measurement was used to observe energetic states of carriers in TIPS-pentacene double-layer diode. Finally, the carrier mechanism in organic diodes was discussed by analyzing the diodes as a Maxwell-Wagner effect element.     

复合陶瓷BaTiO_3/Ni_(0.5)Zn_(0.5)Fe_2O_4的常温巨介电特性研究

采用传统的固相反应法和氧化物陶瓷工艺制备了无铅磁电复合陶瓷(1–x)BaTiO3/x Ni0.5Zn0.5Fe2O4(质量配比,x=0,0.2,0.5,0.8)(BTO/NZF),研究了NZF含量对复合陶瓷的物相组成、微观形貌、致密度和介电性能的影响。结果表明:当NZF含量较低(x=0,0.2,0.5)时,NZF对复合陶瓷有介电稀释效应;当NZF含量较高(x=0.8)时,复合陶瓷晶粒尺寸、致密度及两相间接触面积增大,其NZF含量达到复合陶瓷渗流阈值,产生Maxwell-Wagner(M-W)表面极化效应,使得复合陶瓷在低频(f=40 Hz)下具有高的巨介电常数(ε′=312 238)和较低的介电损耗(tanθ=0.40)。     

Effects of Processing Conditions on the Dielectric Properties of CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript>

There have been a number of recent reports of anomalously large permittivities (ε _r ≈ 10⁴) in the material CaCu₃Ti₄O₁₂. The dielectric spectra is characterized by a large, relatively temperature independent permittivity near room temperature which exhibits a dielectric relaxation above 100 K. The crystal structure of CaCu₃Ti₄O₁₂ can be described as pseudo-perovskite with a cubic unit cell with a lattice constant of 7.391 Å. The ubiquitous occurrence of this dielectric behavior in ceramics, single crystals, and thin films suggests that the polarization is not related to a simple conducting grain/insulating grain boundary-type system. While the precise origin of the dielectric response is not entirely clear, in this work it is shown that processing conditions have a significant influence on the room temperature dielectric properties. Specifically, the permittivity and loss exhibit a strong dependence on the oxygen partial pressure and sintering time. In fact, studies of the effects of sintering time and supporting evidence from capacitance-voltage measurements conclusively show that there is no direct relationship between the permittivity and grain size, as is the case in classical boundary layer systems. Lastly, with aliovalent doping the room temperature dielectric properties can be optimized to provide a high permittivity (ε _r ～ 8,000) dielectric with relatively low loss (tan δ < 0.05 at 1 kHz).     

A Mathematical-Physical Model for the Charge Transport in p-Type SrTiO3 Ceramics Under dc Load: Maxwell-Wagner Relaxation

A mathematical-physical model to describe the current response of p-type SrTiO₃ ceramics in the low-temperature regime upon dc voltage step was developed, utilizing the numerical class library DIFFPACK (Numerical Objects, Norway). The current response in the time domain shows the experimentally observed Maxwell-Wagner relaxation (space charge polarization), followed by leakage current, and, eventually, resistance degradation. The relaxation behavior is analyzed by means of the simulation results for the spatial profiles of the electrical potential and the respective point defects. The impact of bias voltage and grain boundaries on the relaxation time is investigated. The simulation results are compared with experimental data.     

高密度聚乙烯导电复合材料介电性能的研究

用熔融共混和热压工艺制备了CB/HDPE,MWNT/HDPE聚合物基复合材料,研究了填料体积含量,测试电压,填料形貌尺寸对复合体系介电性能的影响.实验表明,当导电填料含量达到渗流阈值附近时复合材料的介电常数达到最大,测试电压达到一定值时,渗流阈值附近的复合材料介电损耗会迅速增加,相同填料体积含量的MWNT/HDPE复合体系比CB/HDPE体系具有更高的介电常数,利用渗流理论、Maxwell-Wagner界面极化效应和微电容模型解释了实验现象.     

Copper cadmium titanate prepared by different methods: Phase formation,dielectric properties and relaxor behaviors

Giant permittivity was performed in CdCu₃Ti₄O₁₂ ceramics separately fabricated via the sol-gel technique (SG) and the standard solid-state technique (SS). XRD patterns and Raman spectrums revealed that CdCu₃Ti₄O₁₂ ceramics with single perovskite-related crystal phase were obtained irrespective of the preparation processing. TG-DSC, XRD, and FT-IR were carried out to explore the formation temperature of crystal phases as well as reaction mechanisms. The results indicated that the phase formation temperature of CdCTO-SG powders is at least 100?°C lower than that of CdCTO-SS powders and the dielectric properties of the CdCTO-SG ceramics are superior to those of the CdCTO-SS ceramics. In addition, three abnormal dielectric peaks were observed in dielectric temperature spectrum regardless of the two methods. Besides, data acquired from impedance and modulus assessments indicated that Maxwell-Wagner polarization contributed to the dielectric responses of samples. Therefore, giant dielectric properties of CdCu₃Ti₄O₁₂ ceramics conformed to internal barrier layer capacitor (IBLC) effect. Semiconducting grains are closely associated with the presence of mixed valence states of Cu⁺/Cu²⁺ and Ti³⁺/Ti⁴⁺ in samples.     

Dielectric spectroscopy of anaerobic adhesive cure

Dielectric spectroscopy (DS) is shown to be a most useful tool for the study of the surface initiated redox cure in model anaerobic acrylic adhesives. These models are deliberately designed to exhibit different levels of cure heterogeneity. The cure is initiated by the surfaces of two substrates on either side of a bondline. The heterogeneous cure situation is referred to as low cure through volume (CTV). Poor CTV is an undesirable feature that leads to mechanical weakness in an adhesive bond. Thus, experimental techniques based on DS are developed to investigate the cure characteristics and in particular the CTV phenomenon in the model anaerobic adhesives.     

Jahn-Teller assisted polaronic electron hopping in LiCuNb3O9

The role of A-sited elements in double perovskite colossal dielectric LiCuNb₃O₉ has been analyzed by replacing the Cu ions with Li ions. Structural analysis revealed the presence of Jahn-Teller effect because of the Cu ions. Two thermally activated relaxations have been observed: the lower temperature one has been assigned to be a polaronic relaxation following Mott variable-range-hopping mechanism. Impedance analysis and humidity sensitive test proved that the higher temperature one is a Maxwell-Wagner relaxation. Our work highlights that the polaronic hopping is responsible for the colossal dielectric permittivity behavior of LiCuNb₃O₉.     

Microwave-assisted remediation of phenol wastewater on activated charcoal

In this paper, the effects of microwave dielectric heating in a multiphase gas-liquid-solid reactor are investigated. Experimental procedures are carried out in order to obtain significant arcing in the bed and control this cold plasma formation interpreted by Maxwell-Wagner effect. These procedures are tested on the catalytic wet air oxidation of phenol using activated carbon as catalyst. This study shows that arcing in the bed can only be obtained under conditions of partial wetting. Arcing leads to hot spots formation and thermal runaway if not early detected, but control is possible by acting on incident power. The low values of phenol conversions obtained are attributed to the very low oxygen partial pressure, experiments having been conducted at atmospheric pressure with air.     

Optical second harmonic generation measurements for investigating electron injection into a pentacene field effect transistor with Au source and drain electrodes

The pentacene field effect transistors (FETs)' operation for the injection carrier was revealed by means of the drain current-elapsed time (I_ds-t) and optical second harmonic generation (SHG) measurements. The charge carriers forming the conducting channel of pentacene FETs were mainly holes injected from the Au source electrode. Carrier injection from source and drain electrodes was followed by the carrier trapping, and the SHG signal modulated by the change in the electric field distribution between Au the source and drain electrodes was shown. In particular, at the off state of the FET, electron injection and succeeding trapping were suggested. Furthermore, hole injection assisted by trapped electrons was also suggested.