基于关键路径延时检测的自适应电压缩减技术

为了减小传统的最差情况设计方法引入的电压裕量,提出了一种变化可知的自适应电压缩减(AVS)技术,通过调整电源电压来降低电路功耗.自适应电压缩减技术基于检测关键路径的延时变化,基于此设计了一款预错误原位延时检测电路,可以检测关键路径延时并输出预错误信号,进而控制单元可根据反馈回的预错误信号的个数调整系统电压.本芯片采用SMIC180 nm工艺设计验证,仿真分析表明,采用自适应电压缩减技术后,4个目标验证电路分别节省功耗12.4％,11.3％,10.4％和11.6％.     

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.     

Voltage reference architectures for low-supply-voltage low-power applications

This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm² and 0.08 mm², respectively.     

现场总线在冶炼烟气制酸系统中的应用实践

分析了冶炼烟气制酸工艺的特点，介绍了由PROFIBUS-DP现场总线构建的冶炼厂烟气制酸监控系统，详细介绍了其硬件配置及相应的软件设计。     

卫星电视上行站信号自动监测系统

每个卫星电视上行站都必须对卫星转发器上的电视信号进行监测,才能及时发现卫星电视上行信号的异常变化,准确处理异常突发干扰。为实现自动、连续、实时监测,就需要建立卫星电视上行站射频信号自动监测系统。文章详细介绍了一个自动监测系统的设计及实现。     

DSR的一种自适应路由自动缩短机制

动态源路由协议是无线自组织网络众多路由协议中被广泛关注的一种按需路由协议，目前，关于该协议的优化措施有很多。本文先分析了动态源路由协议的一种优化机制——路由自动缩短，该机制能动态缩短处于工作状态路由的跳数，但不保证缩短路由的质量，在此基础上，提出一种自适应路由自动缩短机制，新机制既可缩短路由．又能保证缩短路由质量．理论分析及仿真结果表明，自适应路由缩短机制的各项性能优于原路由缩短机制。     

碳纤维连续抽油杆作业车自动调平系统设计

为保证碳纤维连续抽油杆作业车作业时工作平台处于水平状态,防止侧翻,开展了作业车自动调平系统的设计。在给出自动调平系统构成的基础上,着重论述了系统的自动调平控制方案、自动调平控制原理以及自动调平控制软件的设计,给出作业车自动调平控制系统流程图。     

Chemische Zusammensetzung und Mikrostruktur polymerabgeleiteter Gläser und Keramiken im System Si–C–O. Teil 2: Charakterisierung der Gefügeausbildung mittels hochauflösender Durchstrahlungselektronenmikroskopie und Feinbereichsbeugung

Chemical Composition and Microstructure of Polymer‐Derived Glasses and Ceramics in the Si–C–O System. Part 2: Characterization of microstructure formation by means of high‐resolution transmission electron microscopy and selected area diffraction Liquid or solid silicone resins represent the economically most interesting class of organic precursors for the pyrolytic production of glass and ceramics materials on silicon basis. As dense, dimensionally stable components can be cost‐effectively achieved by admixing reactive filler powders, chemical composition and microstructure development of the polymer‐derived residues must be exactly known during thermal decomposition. Thus, in the present work, glasses and ceramics produced by pyrolysis of the model precursor polymethylsiloxane at temperatures from 525 to 1550 °C are investigated. In part 1, by means of analytical electron microscopy, the bonding state of silicon was determined on a nanometre scale and the phase separation of the metastable Si–C–O matrix into SiO₂, C and SiC was proved. The in‐situ crystallization could be considerably accelerated by adding fine‐grained powder of inert fillers, such as Al₂O₃ or SiC, which permits effective process control. In part 2, the microstructure is characterized by high‐resolution transmission electron microscopy and selected area diffraction. Turbostratic carbon and cubic β‐SiC precipitate as crystallization products. Theses phases are embedded in an amorphous matrix. Inert fillers reduce the crystallization temperature by several hundred °C. In this case, the polymer‐derived Si–C–O material acts as a binding agent between the powder particles. Reaction layer formation does not occur. On the investigated pyrolysis conditions, no crystallization of SiO₂ was observed.     

NMOS器件两次沟道注入杂质分布和阈电压计算

分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。对两次注入杂质的扩散分别提取了扩散系数的氧化增强系数、氧化衰减系数和有效杂地系数，给出了表面浓度与工艺参数之间的模拟关系式，以峰值浓度为强反型条件计算了开启电压，文章还给出了开启电压、氧化条件、不同注入组合之间的关系式。     

自动力套管补贴加固技术及其在B125井的应用

随着油田开发时间的延长，油水井井下套管的损坏将越来越严重，套管故障井将越来越多，为了恢复套损井生产，将套管损坏所造成的损失降到最低，在配套波纹管补贴，水动力补贴，爆炸补贴等专门修套技术的基础上，通过认真调查研究，又配套了操作方便简单，适用套管损坏类型广的自动力套管补贴加固技术，使各种套管变形，套管断错（错开没有位移或位移量不大时）、套管破裂，误射孔井段封堵，已射开水层封堵等修井作业的难度进一步降低，从而进一步提高了修复井综合开发经济效益。