基于重要度排序的配电自动化终端优化布局方法

针对配电自动化终端优化布局问题，提出了一种基于重要度排序的终端优化布局方法。首先以等年值综合费用为目标函数，供电可靠性和投入产出比为双重约束建立了配电自动化终端优化布局模型。然后通过分析配电自动化终端对供电可靠性提升的影响，给出各个节点的“二遥”及“三遥”终端安装重要度定义及计算公式。最后采用枚举法确定最优终端安装数量，基于节点终端安装重要度排序确定终端的最优安装位置。该方法考虑了已布局节点对剩余节点终端安装重要度的影响，能够在降低计算量的同时兼顾布局合理性。运用所提方法RBTS-BUS2系统及扩充模型进行终端优化布局并与智能优化算法的布局结果进行对比，验证了本文方法的有效性及优越性。     

Good dielectric performance and broadband dielectric polarization in Ag,Nb co-doped TiO2

Due to the demand of miniaturization and integration for ceramic capacitors in electronic components market, TiO₂-based ceramics with colossal permittivity has become a research hotspot in recent years. In this work, we report that Ag⁺/Nb⁵⁺ co-doped (Ag_1/4Nb_3/4)_xTi_1−xO₂ (ANTOx) ceramics with colossal permittivity over a wide frequency and temperature range were successfully prepared by a traditional solid–state method. Notably, compositions of ANTO0.005 and ANTO0.01 respectively exhibit both low dielectric loss (0.040 and 0.050 at 1 kHz), high dielectric permittivity (9.2 × 10³ and 1.6 × 10⁴ at 1 kHz), and good thermal stability, which satisfy the requirements for the temperature range of application of X9R and X8R ceramic capacitors, respectively. The origin of the dielectric behavior was attributed to five dielectric relaxation phenomena, i.e., localized carriers' hopping, electron–pinned defect–dipoles, interfacial polarization, and oxygen vacancies ionization and diffusion, as suggested by dielectric temperature spectra and valence state analysis via XPS; wherein, electron-pinned defect–dipoles and internal barrier layer capacitance are believed to be the main causes for the giant dielectric permittivity in ANTOx ceramics.     

电网设备线夹开裂原因

某电力公司变电站用铝合金设备线夹在运行过程发生批次开裂事故,通过宏观观察、断口分析、化学成分分析、力学性能测试、冷冻模拟试验等方法,对设备线夹的开裂原因和开裂机理进行了分析。结果表明:设备线夹焊缝存在焊接缺陷,导致焊缝强度下降;设备线夹接线管底部存在积水空间,寒冷天气下积水结冰,体积膨胀,使焊缝承受设计工况外的负载而过载开裂,造成了线夹开裂。     

基于改进相干增强扩散与纹理能量测度和高斯混合模型的导光板表面缺陷检测方法

针对液晶屏(LCD)导光板表面缺陷检测方法存在漏检率和误检率较高,对产品表面复杂渐变的纹理结构适应性差的问题,提出一种基于改进相干增强扩散(ICED)与纹理能量测度和高斯混合模型(TEM-GMM)的LCD导光板表面缺陷检测方法。首先,构建ICED模型,基于结构张量引入平均曲率流扩散(MCF)滤波,使得相干增强扩散(CED)模型对缺陷的细线状纹理有良好的边缘保持效果,并利用相干性得到缺陷纹理增强和背景纹理抑制的滤波后图像;然后,根据Laws纹理能量测度(TEM)提取图像纹理特征,将图像的背景纹理特征作为离线阶段高斯混合模型(GMM)的训练数据,使用期望最大化(EM)算法估计GMM参数;最后,计算待检测图像各像素的后验概率,并将其作为在线检测阶段缺陷像素的判断依据。实验结果表明,该检测方法在导光颗粒随机、规则两种分布的缺陷图像测试数据组上的漏检率和误检率分别为3.27%、4.32%和3.59%、4.87%。所提检测方法适用范围广,可有效检测出LCD导光板表面划痕、异物、脏污和压伤等类型的缺陷。     

GaN中质子辐照损伤的分子动力学模拟研究

本文利用分子动力学方法研究了GaN在质子辐照下的损伤。对不同能量（1~10 keV）初级离位原子（PKA）引起的级联碰撞进行了研究，分析了点缺陷与PKA能量的关系、点缺陷随时间的演化规律、点缺陷的空间分布及点缺陷团簇的尺寸特征。研究结果表明，点缺陷的产生与PKA能量呈线性关系，不同类型的点缺陷随时间演化规律相似，点缺陷多产生在PKA径迹旁，点缺陷团簇多为孤立的点缺陷和小团簇。     

Origin of the temperature stability of dielectric constant in CaCu3Ti4O12

The temperature and dc bias stability of the dielectric constant and loss tangent of CaCu₃Ti₄O₁₂ samples sintered under different oxygen atmospheres are discussed. The results suggest that the metal-oxygen vacancy related defects not only provide the charge carriers for the conduction (defect doping) but also contribute to the huge permittivity in the way of defect dipoles repositioning under charge carrier hopping. The charge localization in a specific copper-oxygen vacancy defect complex is the reason of the huge and stable permittivity and low dielectric loss in the middle temperature range, 90 K-200 K (20 Hz), while the implementation of the large barrier layer height needs a contribution by the titanium oxygen vacancy related trap charges in the grain boundaries, which also lead to a second permittivity stable range in a higher temperature range 200 K–300 K.     

高熵合金的抗辐照性能研究进展

高熵合金作为一种新型多主元固溶体合金，成分复杂、全局无序，且具有多主元效应，表现出较为优异的综合性能，有望作为新型抗辐照结构材料应用于先进核能反应堆系统。本文介绍了目前高熵合金抗辐照性能的研究现状，主要涉及高熵合金辐照缺陷演化、微观结构变化和性能退化等辐照损伤演化过程，梳理了多主元效应对辐照损伤演化过程的影响规律。针对高熵合金的抗辐照性能研究，总结了目前高熵合金的几种抗辐照损伤机制，归纳了高熵合金抗辐照性能研究存在的问题，以及对高熵合金后续的研究方向进行了展望。     

SLM printing of cermet powders: Inhomogeneity from atomic scale to microstructure

It is very challenging for 3D printing based on the selective laser melting (SLM) technology to obtain cermet bulk materials with high density and homogeneous microstructures. In this work, the SLM process of the cermet powders was studied by both simulations and experiments using the WC-Co cemented carbides as an example. The results indicated that the evolution of the ceramic and metallic phases in the cermet particle during the heating, melting and solidification processes were all significantly inhomogeneous from atomic scale to mesoscale microstructures. As a consequence, the microstructural defects were caused intrinsically in the printed bulk material. The formation and growth of the bonding necks between the particles were mainly completed at the later stage of laser heating and the early stage of solidification. Both simulations and experiments demonstrated that thin amorphous layers formed at the ceramics/metal interfaces. This work disclosed the mechanisms for the evolution from the atomic scale to microstructure during the SLM printing of cermet powders, and discovered the origin of the defects in the printed cermet bulk materials.