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排序方式: 共有208条查询结果,搜索用时 15 毫秒
1.
提出了一种新的全耗尽SOI MOSFETs阈值电压二维解析模型.通过求解二维泊松方程得到器件有源层的二维电势分布函数,氧化层-硅界面处的电势最小值用于监测SOI MOSFETs的阈值电压.通过对不同栅长、栅氧厚度、硅膜厚度和沟道掺杂浓度的SOI MOSFETs的MEDICI模拟结果的比较,验证了该模型,并取得了很好的一致性. 相似文献
2.
W.C. Lee P. ChangT.D. Lin L.K. ChuH.C. Chiu J. Kwo M. Hong 《Microelectronic Engineering》2011,88(4):336-341
InGaAs and Ge MOSFETs with high κ’s are now the leading candidates for technology beyond the 15 nm node CMOS. The UHV-Al2O3/Ga2O3(Gd2O3) [GGO]/InGaAs has low electrical leakage current densities, C-V characteristics with low interfacial densities of states (Dit’s) and small frequency dispersion in both n- and p-MOSCAPs, thermal stability at temperatures higher than >850 °C, a CET of 2.1 nm (a CET of 0.6 nm in GGO), and a well tuning of threshold voltage Vth with metal work function. Device performances in drain currents of >1 mA/μm, transconductances of >710 μS/μm, and peak mobility of 1600 cm2/V s at 1 μm gate-length were demonstrated in the self-aligned, inversion-channel high In-content InGaAs n-MOSFETs using UHV-Al2O3/GGO gate dielectrics and ALD-Al2O3. Direct deposition of GGO on Ge without an interfacial passivation layer has given excellent electrical performances and thermodynamic stability. Self-aligned Ge p-MOSFETs have shown a high drain current of 800 μA/μm and peak transconductance of 420 μS/μm at 1 μm gate-length. 相似文献
3.
In this paper, we have analyzed the design parameters of Cylindrical Surrounding Double-Gate (CSDG) MOSFETs as an RF switch for the advanced wireless telecommunication systems. The proposed CSDG RF MOSFET is operated at the microwave regime of the spectrum. We emphasize on the basics of the circuit elements such as drain current, threshold voltage, resonant frequency, resistances at switch ON condition, capacitances, energy stored, cross talk and switching speed required for the integrated circuit of the radio frequency sub-system of the CSDG RF CMOS device and the physical significance of these basic circuit elements is also discussed. We observed that the total capacitance between the source to drain for the proposed CSDG MOSFET is more compared to the Cylindrical Surrounding Single-Gate (CSSG) MOSFET due to the greater drain current passing area of the CSDG MOSFET, which reveals that the isolation is better in the CSDG MOSFET compared to that of the simple double-gate MOSFET and single-gate MOSFET. We analyzed that the CSDG MOSFET stores more energy (1.4 times) as compared to the CSSG MOSFET. Therefore, the CSDG MOSFET has more stored energy. The ON-resistance of CSDG MOSFET is half than that of the double-gate MOSFET and single-gate MOSFET, which reveals that the current flow from source to drain in CSDG MOSFET is better than the double-gate MOSFET and single-gate MOSFET. 相似文献
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n型纳米非对称双栅隧穿场效应晶体管(DG-TFET)速度快、功耗低,在高速低功耗领域具有很好的应用前景,但其阈值电压的表征及其模型与常规MOSFET不同.在深入研究n型纳米非对称DG-TFET的阈值特性基础上,通过求解器件不同区域电场、电势的方法,建立了n型纳米非对称DG-TFET器件阈值电压数值模型,探讨了器件材料物理参数以及漏源电压对阈值电压的影响,通过与Silvaco Atlas的仿真结果比较,验证了模型的正确性.研究表明,n型纳米非对称DG-TFET的阈值电压分别随着栅介质层介电常数的增加、硅层厚度的减薄以及源漏电压的减小而减小,而栅长对其阈值电压的影响有限.该研究对纳米非对称DG-TFET的设计、仿真及制造有一定的参考价值. 相似文献
6.
A 2D analytical model for transconductance, Sub-threshold current and Sub-threshold swing for Triple Material Surrounding Gate MOSFET (TMSG) is presented in this paper. Based on the solution of two dimensional Poisson equation, the physics based model of sub-threshold current of the device is derived. The model also includes the effect of gate oxide thickness and silicon thickness on the sub-threshold swing characteristics. Transconductance to drain current ratio of the triple material surrounding gate is calculated since it is a better criterion to access the performance of the device. The effectiveness of TMSG design was scrutinized by comparing with other triple material and dual material gate structures. Moreover the effect of technology parameter variations is also studied and proposed. This proposed model offers basic guidance for design of TMSG MOSFETs. The results of the analytical model are compared with the MEDICI simulation results thus providing validity of the proposed model. 相似文献
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场引晶体管本质双极,包括电子和空穴表面和体积沟道和电流,一或多个外加横向控制电场.自1952年Shockley发明,55年来它被认为单极场引晶体管,因电子电流理论用多余内部和边界条件,不可避免忽略空穴电流.多余条件,诸如电中性和常空穴电化电势,导致仅用电子电流算内部和终端电学特性的错误解.当忽略的空穴电流与电子电流可比,可在亚阈值区和强反型区,错误解有巨大误差.本文描述普适理论,含有电子和空穴沟道和电流.用z轴宽度方向均匀的直角平行六面体(x,y,z)晶体管,薄或厚、纯或杂基体,一或二块MOS栅极,描述两维效应及电势、电子空穴电化电势的正确内部和边界条件.没用多余条件,导出四种常用MOS晶体管,直流电流电压特性完备解析方程:半无限厚不纯基上一块栅极(传统的Bulk MOSFET),与体硅以氧化物绝缘的不纯硅薄层上一块栅极(SOI),在沉积到绝缘玻璃的不纯硅薄层上一块栅极(SOI TFT),和薄纯基上两块栅极(FinFETs). 相似文献
10.
Leonardo Gomez Michael Canonico Meekyung Kim Pouya Hashemi Judy L. Hoyt 《Journal of Electronic Materials》2008,37(3):240-244
Ultrathin strained-Si/strained-Ge heterostructures on insulator have been fabricated using a bond and etch-back technique.
The substrate consists of a trilayer of 9 nm strained-Si/4 nm strained-Ge/3 nm strained-Si on a 400-nm-thick buried oxide.
The epitaxial trilayer structure was originally grown pseudomorphic to a relaxed Si0.5Ge0.5 layer on a donor substrate. Raman analysis of the as-grown and final transferred layer structures indicates that there is
little change in the strain in the Si and Ge layers after layer transfer. These ultrathin Si and Ge films have very high levels
of strain (∼1.8% biaxial tension and 1.4% compression, respectively), and are suitable for enhanced-mobility field-effect
transistor applications. 相似文献