Irradiation-induced microstructure damage in He-irradiated 3C-SiC at 1000℃

The effect of the high-temperature helium irradiation on microstructural evolution of 3C-SiC was investigated by the combination of Raman spectroscopy, conventional transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). 3C-SiC wafers were irradiated with 130 keV He⁺ ions at fluences of 2 × 10¹⁶ He⁺/cm², 4 × 10¹⁶ He⁺/cm² and 2 × 10¹⁷ He⁺/cm² at 1000℃. Helium bubbles, dislocation loops, and their interaction with the stacking faults were focused on and characterized by TEM. Helium bubbles preferentially nucleate and grow on stacking faults. Bubble links on the (100) plane in 3C-SiC are formed. In addition, stacking faults can effectively trap irradiation-induced lattice defects to enhance their recovery. The type of irradiation-induced lattice defects and elemental distribution are also investigated. The research results are valuable for the 3C-SiC used in the advanced nuclear energy systems.     

Design of disturbance observer based on adaptive-neural control for large-scale time-delay systems in the presence of actuator fault and unknown dead zone

This article presents an adaptive neural compensation scheme for a class of large-scale time delay nonlinear systems in the presence of unknown dead zone, external disturbances, and actuator faults. In this article, the quadratic Lyapunov–Krasovskii functionals are introduced to tackle the system delays. The unknown functions of the system are estimated by using radial basis function neural networks. Furthermore, a disturbance observer is developed to approximate the external disturbances. The proposed adaptive neural compensation control method is constructed by utilizing a backstepping technique. The boundedness of all the closed-loop signals is guaranteed via Lyapunov analysis and the tracking errors are proved to converge to a small neighborhood of the origin. Simulation results are provided to illustrate the effectiveness of the proposed control approach.     

鄂尔多斯盆地榆林－神木地区上古生界裂缝和断层分布及其对天然气富集区的影响

鄂尔多斯盆地东部榆林-神木地区上古生界发育了断层和3种类型的裂缝.裂缝类型有区域构造缝、水平缝（包括层理缝与缝合线）和成岩缝,其中,区域构造缝主要呈北东向分布,在上古生界各层位均发育,缝合线在山2段中下部和太原组灰岩中都可见到,层理缝仅见于山西组山2段中下部,成岩缝仅见于石千峰组千5段.断层为逆断层,断穿了上古生界下部气藏的区域盖层和烃源岩.裂缝和断层分布对研究区重点勘探层位山2段、盒8段和千5段的天然气富集起到了重要作用：伴生的层理缝和缝合线的分布控制了山2段天然气富集区;区域构造缝的分布促进了盒8段天然气的富集;而千5段天然气的富集则依赖于本区断穿上石盒子组的断层和区域构造缝的分布.图6表2参29     

黄骅坳陷新生代断裂构造系统研究

黄骅坳陷断裂构造极为发育，其新生代构造系统主要为伸展构造系统，以铲形正断层或坡坪式正断层为主干伸展断层，以不同尺度的北东一北东东向正断层和具调节性质的北西一北西西向断层为特征。经过对黄骅坳陷新生代构造应力场的分析，黄骅坳陷盖层中极难出现明确的走滑断裂，其雁列状排列的断层应为倾斜滑动断层；黄骅坳陷中不同凹陷或断块之间不同的伸展程度往往为横向地垒状凸起、鼻状凸起或鼻状背斜所调节，在横向凸起和凹陷之间伴生北西向正断层，它们与挤压变形体系中具有走滑性质的横向变换断层又有本质上的不同。     

新型低压抽屉式开关柜在冶金系统的应用

介绍新型低压抽屉式开关柜的结构性能和特点，并与早期低压柜作了比较。阐述了新型低压抽屉式开关柜在冶金系统应用中的几点改进情况。     

SMT测试技术

主要介绍了当前用于检测组装后PCB的缺陷和故障的一些常见测试技术 ,并对未来的发展趋势进行了初步探讨     

Highly oriented star-like patterns observed on GaSe epilayers grown on Si(111)

Epitaxial lamellar gallium selenide (GaSe) semiconductors have been grown on trench-patterned silicon (Si) substrates by molecular beam epitaxy. An intriguing star-like patterned morphology was identified by atomic force microscopy on these epilayers. This non-trivial feature can be correlated with the accumulation of stacking faults of two concurrent epitaxial domains around self-oriented triangular pits developed earlier on the Si(111) surface by the chemical etching. Crystallographic considerations show how the stars can be formed.     

Trade-offs in scan path and BIST implementations for RAMs

In this article we propose efficient scan path and BIST schemes for RAMs. Tools for automatic generation of these schemes have been implemented. They reduce the design effort and thus allow the designer to select the more appropriate scheme with respect to various constraints.     

Shorts in self-checking circuits

It has been noted by several authors that the classical stuck-at logical fault model might not be an appropriate representation of certain real failures occurring in integrated circuits. Shorts are an important class of such faults. This article gives a detailed analysis of the effects of shorts in self-checking circuits and proposes techniques for dealing with them. More precisely, we show that, unlike other faults such as stuck-at, stuck-on, and stuck-open—which produce only single errors in the place they occur—shorts can produce double errors on the two shorted lines. In particular, feedback shorts can produce double errors on the two shorted lines. The double error is unidirectional for some feedback shorts and non-unidirectional for some others. Furthermore, in some technologies (e.g., CMOS), non-feedback shorts can also produce double non-unidirectional errors. We also show that unlike stuck-at, stuck-on, and stuck-open faults, redundant shorts can destroy the SFS property. Then we propose several techniques for coping with these problems and we illustrate the results by circuit implementation examples.The present study is given for NMOS and CMOS circuits but we show that it is valid for any other technology.