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Fei Peng 《组合铁电体》2019,198(1):153-159
Abstract

This article presents a novel output buffer it realized with low-voltage (1.8- and 3.3-V) transistors to transmit high-voltage signals for 5-V applications. Otherway, the proposed circuit also can apply to transmitting higher voltage signals using lower voltage process integrated circuit. The buffer converts 0/1.8-V voltage swing to 0/5-V voltage swing by three steps. The simulation shows the buffer has good AC/DC characteristics. The proposed buffer has been fabricated in a 0.18-μm 1.8/3.3-V 1P6M CMOS process. The experimental results have confirmed that the proposed buffer can be successfully operated without suffering high-voltage gate-oxide overstress in the 5-V interface. In addition, a new level converter that can convert 0/3.3-V voltage swing to 1.8/5-V voltage swing is also presented in this article. The proposed level converter is realized with only 3.3-V transistors. The experimental results have also confirmed that the proposed level converter can be operated correctly.  相似文献
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Abstract

The impact of platinum contamination on the breakdown properties of gate oxide is reported. Wafers were intentionally contaminated with 1×1013 to 4×1014 at/cm2 Pt after a 7.5 nm gate oxide growth, 300 nm poly-silicon deposition and subsequent phosphorus doping. Breakdown characteristics were evaluated using a voltage ramp method. The current-voltage curves of MOS capacitors show very few low field breakdown events, and the main field breakdown occurs at 12 MV/cm. If compared to clean wafers, platinum does not increase the defect density seriously. It is found from the E-Ramp results that platinum contamination up to 4×1014 at/cm2 does not have a pronounced effect on the gate oxide integrity if the contamination occurs after front-end-of-line processing of device fabrication.  相似文献
3.
魏伟伟  张杨  徐国卿 《电源学报》2021,19(6):171-178
绝缘栅双极型晶体管IGBT(insulated gate bipolar transistor)作为电力电子系统的核心器件,广泛应用于新能源发电、轨道机车牵引、电动汽车驱动以及航空航天等重要领域。栅氧层作为IGBT中相对薄弱的环节,如何准确地预测IGBT栅氧层老化状态成为学术界和工业界的研究热点。首先,分析IGBT栅氧层老化机理以及栅氧层老化对IGBT关断过程的影响,提出关断延迟时间td(off)作为IGBT栅氧层老化状态的状态参数。其次,建立IGBT栅氧层老化仿真模型,并对td(off)表征IGBT栅氧层老化状态进行仿真分析。最后,搭建了双脉冲实验平台,获得了栅氧层老化影响IGBT功率模块相关电气参数的实验结果,并与仿真结果进行了比较验证。实验结果证明td(off)可以有效地表征IGBT栅氧层老化状态。该研究对电力电子器件和装置的运行维护与状态预测具有重要的应用价值。  相似文献
4.
功率半导体器件栅极氧化层退化对功率器件的正常运行产生严重影响,不同偏置应力导致栅氧化层退化形式不同,故栅氧化层的状态监测研究对确保功率器件的高可靠性具有重要意义。从栅氧化层退化的微观机理出发,建立相关特征参数与栅氧化层退化的精确函数关系,在栅氧化层退化的情况下对特征参数漂移量进行检测可以实现对功率器件栅氧化层的状态监测。围绕退化特征参数和退化模型方面的国内外研究,分类讨论基于阈值电压、米勒效应参数等状态监测方法的最新进展,并着重对栅氧化层状态监测方法的性能进行分析和对比。在此基础上,结合功率器件发展和应用趋势,展望了功率半导体器件栅氧化层状态监测的研究方向。  相似文献
5.
The degradation of ultrathin SiO2 films accompanied by the hole direct tunneling is investigated using a substrate hot hole (SHH) injection technique. Hot holes from the substrate as well as cold holes in the inversion layer are injected into the gate oxides in p‐channel MOSFETs with p+ poly‐Si gates, while the gate bias is kept low enough to avoid simultaneous electron injection from the gate. During the SHH stress, in contrast to the case of thicker oxide films, a strong correlation is observed between the oxide film degradation and the injected hole energy, whereas no degradation occurs due to the hole direct tunneling from the inversion layer. These experimental findings indicate the existence of threshold energy for trap creation process, which has been predicted by the theoretical study of hole‐injection‐induced structural transformation of oxygen vacancy in SiO2. © 2002 Wiley Periodicals, Inc. Electr Eng Jpn, 140(4): 54–61, 2002; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.2008  相似文献
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