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1.
《低温学》2015
He-3 is generally recognized for its ability to provide more excellent thermophysical performance than He-4, especially in the 4 K temperature range. However, this was not always the case in our preliminary experiments on a three-stage Stirling-type pulse tube cryocooler (SPTC). Our ongoing studies, as reported in this paper, demonstrate that the different working fluids also affect the performance through their phase shifting capability. This feature has been passed over in large part by researchers considering refrigerant substitution. Unlike previous theoretical analyses that focus primarily on regenerator losses, this report investigates the effects of the working fluid on the phase angle at the cold end in order to quantitatively reveal the relationship between the lowest attainable temperature and the cooling capacity. The analysis agrees well with our experimental results on a three-stage SPTC. While running with the operating parameters optimized for He-3, the lowest temperature of the SPTC decreased from 5.4 K down to 4.03 K. This is the lowest refrigeration temperature ever achieved with a three-stage SPTC. 相似文献
2.
Aluminum-doped zinc oxide (ZnO:Al, AZO) electrodes were covered with very thin (∼6 nm) Zn1−xMgxO:Al (AMZO) layers grown by atomic layer deposition. They were tested as hole blocking/electron injecting contacts to organic semiconductors. Depending on the ALD growth conditions, the magnesium content at the film surface varied from x = 0 to x = 0.6. Magnesium was present only at the ZnO:Al surface and subsurface regions and did not diffuse into deeper parts of the layer. The work function of the AZO/AMZO (x = 0.3) film was 3.4 eV (based on the ultraviolet photoelectron spectroscopy). To investigate carrier injection properties of such contacts, single layer organic structures with either pentacene or 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine layers were prepared. Deposition of the AMZO layers with x = 0.3 resulted in a decrease of the reverse currents by 1–2 orders of magnitude and an improvement of the diode rectification. The AMZO layer improved hole blocking/electron injecting properties of the AZO electrodes. The analysis of the current-voltage characteristics by a differential approach revealed a richer injection and recombination mechanisms in the structures containing the additional AMZO layer. Among those mechanisms, monomolecular, bimolecular and superhigh injection were identified. 相似文献
3.
分析了乐滩灌区工程北干渠溯河隧洞段长约1.06 km穿合山煤矿采空区的地质情况.借鉴高速公路煤矿采空区的成功处理经验,通过科学分析,对采空区变形和区域内覆岩的稳定性做了评价,论述了输水线路穿采空区段采取全充填压力注浆法的工程处理方法. 相似文献
4.
L. Gao P. Hrter Ch. Linsmeier J. Gstttner R. Emling D. Schmitt-Landsiedel 《Materials Science in Semiconductor Processing》2004,7(4-6):331
Deposition of Ag films by direct liquid injection-metal organic chemical vapor deposition (DLI-MOCVD) was chosen because this preparation method allows precise control of precursor flow and prevents early decomposition of the precursor as compared to the bubbler-delivery. Silver(I)-2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato-triethylphosphine [Ag(fod)(PEt3)] as the precursor for Ag CVD was studied, which is liquid at 30 °C. Ag films were grown on different substrates of SiO2/Si and TiN/Si. Argon and nitrogen/hydrogen carrier gas was used in a cold wall reactor at a pressure of 50–500 Pa with deposition temperature ranging between 220 °C and 350 °C. Ag films deposited on a TiN/Si diffusion barrier layer have favorable properties over films deposited on SiO2/Si substrate. At lower temperature (220 °C), film growth is essentially reaction-limited on SiO2 substrate. Significant dependence of the surface morphology on the deposition conditions exists in our experiments. According to XPS analysis pure Ag films are deposited by DLI-MOCVD at 250 °C by using argon as carrier gas. 相似文献
5.
Kruk Menno R.; Halász József; Meelis Wout; Haller József 《Canadian Metallurgical Quarterly》2004,118(5):1062
Aggressive behavior induces an adrenocortical stress response, and sudden stressors often precipitate violent behavior. Experiments in rats revealed a fast, mutual, positive feedback between the adrenocortical stress response and a brain mechanism controlling aggression. Stimulation of the aggressive area in the hypothalamus rapidly activated the adrenocortical response, even in the absence of an opponent and fighting. Hypothalamic aggression, in turn, was rapidly facilitated by a corticosterone injection in rats in which the natural adrenocortical stress response was prevented by adrenalectomy. The rapidity of both effects points to a fast, mutual, positive feedback of the controlling mechanisms within the time frame of a single conflict. Such a mutual facilitation may contribute to the precipitation and escalation of violent behavior under stressful conditions. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
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7.
小波变换在光谱特征提取方面的应用 总被引:4,自引:1,他引:3
人们在处理高光谱图像时一般要对一些典型地物进行光谱分析、特征波段的提取,以便提取出最大量的有效信息,剔除无用或冗余的信息,然后再进行分类识别.采用小波变换的分析方法,选用合适的小波进行分解,根据分解后的高频分量中包含的重要信息,利用局部相邻的正负极值点找出对应于原始光谱曲线上每个吸收带的左右边界;利用局部过零点,即可比较精确的提取出各个吸收带的中心波长.该方法比传统的光谱特征提取方法更简洁、有效,实验证明为一种比较理想的光谱特征提取方法. 相似文献
8.
高功率脉冲水中放电的应用及其发展 总被引:7,自引:0,他引:7
首先介绍了高功率脉冲水下放电的机理,然后综合论述了其应用和研究的状况,从较为成熟的脉冲水处理技术到医疗领域的ESWL应用技术,以及在脉冲电场食品杀菌和水下目标探测方面的最新发展和研究,最后指出了高功率脉冲电技术应用前景以及进行更系统和深入研究的必要性。 相似文献
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