南水北调中线总干渠藻类的生态调度

南水北调中线总干渠无在线调蓄水库,对藻类生态调度过程中出现的问题开展生态调度实现策略和实施方式研究。主要实现策略包括:划定自身的调蓄区,隔离生态调度对下游的影响;采用高效的渠池运行方式,减少生态调度时蓄量的反复调整;综合考虑安全、快速、平稳等需求,设定生态调度实施进程和方式。具体实施方式包括:将总干渠划分为流速调控区、调蓄区和正常运行区,分别实施等体积、控制蓄量和闸前常水位方式运行;将生态调度过程划分为充水阶段和泄水阶段,基于流速调控目标值、持续时长和水位降幅约束条件,确定各阶段时长和各分区的闸门群调控方案等。基于2018年3月输水工况,采用明渠一维非恒定流模型,仿真总干渠上游15个渠池的藻类生态调度过程。结果表明,生态调度可在3.5 d内完成,各渠池的平均流速由0.48 m/s增至0.93 m/s,持续时间超过2 h。在整个生态调度过程中,水位变化平稳,水位变幅符合安全阈值要求,下游渠道的正常运行未受生态调度明显影响。     

Investigation of corrosion properties with Ni–P/TiNO coating on aluminum alloy bipolar plates in proton exchange membrane fuel cell

Aluminum alloy bipolar plates have unique application potential in proton exchange membrane fuel cell (PEMFC) due to the characteristics of lightweight and low cost. However, extreme susceptibility to corrosion in PEMFC operation condition limits the application. To promote the corrosion resistance of aluminum alloy bipolar plates, a Ni–P/TiNO coating was prepared by electroless plating and closed field unbalanced magnetron sputter ion plating (CFUMSIP) technology on the 6061 Al substrate. The research results show that Ni–P interlayer improves the deposition effect of TiNO outer layer and increase the content of TiN and TiO_xN_y phases. Compared to Ni–P and TiNO single-layer coatings, the Ni–P/TiNO coating samples exhibited the lowest current density value of (1.10 ± 0.02) × 10^?6 A·cm^?2 in simulated PEMFC cathode environment. Additionally, potential cyclic polarization measurements were carried out aiming to evaluate the durability of the aluminum alloy bipolar plate during the PEMFC start-up/shut-up process. The results illustrate that the Ni–P/TiNO coating samples exhibit excellent stability and corrosion resistance.     

All two-input logic gates by a single-stage single electron box

In this paper, the design of all two-input logic gates is presented by only a single-stage single electron box (SEB) for the first time. All gates are constructed based on a same circuit. We have used unique periodic characteristics of SEB to design these gates and present all two-input logic gates (monotonic/non-monotonic, symmetric/non-symmetric) by a single-stage design. In conventional monotonic devices, such as MOSFETs, implementing non-monotonic logic gates such as XOR and XNOR is impossible by only a single-stage design, and a multistage design is required which leads to more complexity, higher power consumption and less speed of the gates. We present qualitative design at first and then detailed designs are investigated and optimised by using our previous works. All designs are verified by a single electron simulator which shows correct operation of the gates.     

Flexible Porous Organic Polymer Membranes for Protonic Field-Effect Transistors

Artificial transistors represent an ideal means for meeting the requirements in interfacing with biological systems. It is pivotal to develop new proton-conductive materials for the transduction between biochemical events and electronic signals. Herein, the first demonstration of a porous organic polymer membrane (POPM) as a proton-conductive material for protonic field-effect transistors is presented. The POPM is readily prepared through a thiourea-formation condensation reaction. Under hydrated conditions and at room temperature, the POPM delivers a proton mobility of 5.7 × 10⁻³ cm² V⁻¹ s⁻¹; the charge carrier densities are successfully modulated from 4.3 × 10¹⁷ to 14.1 × 10¹⁷ cm⁻³ by the gate voltage. This study provides a type of promising modular proton-conductive materials for bioelectronics application.     

Discharge coefficient for vertical sluice gate under submerged condition using contraction and energy loss coefficients

A novel method is suggested for the determination of flow discharge in vertical sluice gates with considerably small bias. First, in order to derive an equation for the discharge coefficient, energy-momentum equations are implemented to define the physical realization of the phenomenon. Afterward, the discharge coefficient is presented in terms of contraction and energy loss coefficients. Subsequently, discharge coefficient, contraction, and energy loss coefficients were determined through an implicit optimization technique on the data. Data analysis illustrated that there is a meaningful power relationship between the contraction and energy loss coefficients. Thereafter, dimensional analysis is performed and an explicit best-fit regression equation is developed for defining the energy loss coefficient. The obtained equations for contraction and energy loss coefficients were then used in the computation of the discharge coefficient and determination of the flow discharge in the vertical sluice gate. The performance of the developed approach is validated against the selected benchmarks existing in the literature.     

Effects of hydrogen plasma treatment on the physical and chemical properties of tin oxide thin films for ambipolar thin-film transistor applications

In this study, we investigated the physical and chemical properties of H₂ plasma-treated tin oxide (SnO_X) thin films, followed by their applications in ambipolar thin-film transistors (TFTs). Finely controlled H₂ implantation was carried out using a reactive-ion-etching system at a radio frequency power of 30 W and under various exposure times. H₂ plasma treatments induced changes in the chemical structures and surface morphologies of the SnO_X thin films, including a partial phase transformation of Sn and SnO to SnO₂. The defects originating from oxygen vacancies (O_Vacs) in the SnO_X thin films were passivated by H via the formation of Sn–H bonds, which decreased the density of subgap states in the SnO_X thin films. The H₂ plasma-treated SnO_X TFTs showed considerably improved ambipolarity and electrical performance. Complementary metal–oxide–semiconductor (CMOS) logic inverters comprising H₂-plasma-treated ambipolar SnO_X TFTs exhibited a maximum gain of 34.5 V/V at a supply voltage of 10 V. The results of this study present the meaningful investigation of H₂ plasma-treated ambipolar SnO_X TFTs that can be used to fabricate CMOS circuits for various applications.     

一种交直流混合输电系统直流侧双极故障保护策略

为进一步分析含柔性直流输电(MMC-HVDC)的交直流混合输电系统的故障特征,基于交直流混合输电系统和模块化多电平换流器(MMC)的拓扑结构,推导了MMC的数学模型,研究了直流系统双极短路的故障机理和故障特征,针对含MMC-HVDC的交直流混合输电系统的双极短路故障,设计了限流电路及闭锁换流站与交流断路器跳闸相结合的故障保护方案。以厦门市柔性直流输电系统为例,在PSCAD/EMTDC中搭建了交直流混合系统,并对保护方案进行了仿真验证。结果表明,提出的保护策略能有效地降低故障电流,提高系统稳定性。     

Synergistic Improvement of Long-Term Plasticity in Photonic Synapses Using Ferroelectric Polarization in Hafnia-Based Oxide-Semiconductor Transistors

A number of synapse devices have been intensively studied for the neuromorphic system which is the next-generation energy-efficient computing method. Among these various types of synapse devices, photonic synapse devices recently attracted significant attention. In particular, the photonic synapse devices using persistent photoconductivity (PPC) phenomena in oxide semiconductors are receiving much attention due to the similarity between relaxation characteristics of PPC phenomena and Ca²⁺ dynamics of biological synapses. However, these devices have limitations in its controllability of the relaxation characteristics of PPC behaviors. To utilize the oxide semiconductor as photonic synapse devices, relaxation behavior needs to be accurately controlled. In this study, a photonic synapse device with controlled relaxation characteristics by using an oxide semiconductor and a ferroelectric layer is demonstrated. This device exploits the PPC characteristics to demonstrate synaptic functions including short-term plasticity, paired-pulse facilitation (PPF), and long-term plasticity (LTP). The relaxation properties are controlled by the polarization of the ferroelectric layer, and this polarization is used to control the amount by which the conductance levels increase during PPF operation and to enhance LTP characteristics. This study provides an important step toward the development of photonic synapses with tunable synaptic functions.     

Ferroelectric Exchange Bias Affects Interfacial Electronic States

In polar oxide interfaces phenomena such as superconductivity, magnetism, 1D conductivity, and quantum Hall states can emerge at the polar discontinuity. Combining controllable ferroelectricity at such interfaces can affect the superconducting properties and sheds light on the mutual effects between the polar oxide and the ferroelectric oxide. Here, the interface between the polar oxide LaAlO₃ and the ferroelectric Ca-doped SrTiO₃ is studied by means of electrical transport combined with local imaging of the current flow with the use of scanning a superconducting quantum interference device (SQUID). Anomalous behavior of the interface resistivity is observed at low temperatures. The scanning SQUID maps of the current flow suggest that this behavior originates from an intrinsic bias induced by the polar LaAlO₃ layer. Such intrinsic bias combined with ferroelectricity can constrain the possible structural domain tiling near the interface. The use of this intrinsic bias is recommended as a method of controlling and tuning the initial state of ferroelectric materials by the design of the polar structure. The hysteretic dependence of the normal and the superconducting state properties on gate voltage can be utilized in multifaceted controllable memory devices.     

Precise Extraction of Charge Carrier Mobility for Organic Transistors

Unreliable mobility values, and particularly greatly overestimated values and severely distorted temperature dependences, have recently hampered the development of the organic transistor field. Given that organic field‐effect transistors (OFETs) have been routinely used to evaluate mobility, precise parameter extraction using the electrical properties of OFETs is thus of primary importance. This review examines the origins of the various mobilities that must be determined for OFET applications, the relevant extraction methods, and the data selection limitations, which help in avoiding conceptual errors during mobility extraction. For increased precision, the review also discusses device fabrication considerations, calibration of both the specific gate‐dielectric capacitance and the threshold voltage, the contact effects, and the bias and temperature dependences, which must actually be handled with great care but have mostly been overlooked to date. This review serves as a systematic overview of the OFET mobility extraction process to ensure high precision and will also aid in improving future research.