Utilizing sensor data to model students’ creativity in a digital environment

While creativity is essential for developing students’ broad expertise in Science, Technology, Engineering, and Math (STEM) fields, many students struggle with various aspects of being creative. Digital technologies have the unique opportunity to support the creative process by (1) recognizing elements of students’ creativity, such as when creativity is lacking (modeling step), and (2) providing tailored scaffolding based on that information (intervention step). However, to date little work exists on either of these aspects. Here, we focus on the modeling step. Specifically, we explore the utility of various sensing devices, including an eye tracker, a skin conductance bracelet, and an EEG sensor, for modeling creativity during an educational activity, namely geometry proof generation. We found reliable differences in sensor features characterizing low vs. high creativity students. We then applied machine learning to build classifiers that achieved good accuracy in distinguishing these two student groups, providing evidence that sensor features are valuable for modeling creativity.     

基于关键路径延时检测的自适应电压缩减技术

为了减小传统的最差情况设计方法引入的电压裕量,提出了一种变化可知的自适应电压缩减(AVS)技术,通过调整电源电压来降低电路功耗.自适应电压缩减技术基于检测关键路径的延时变化,基于此设计了一款预错误原位延时检测电路,可以检测关键路径延时并输出预错误信号,进而控制单元可根据反馈回的预错误信号的个数调整系统电压.本芯片采用SMIC180 nm工艺设计验证,仿真分析表明,采用自适应电压缩减技术后,4个目标验证电路分别节省功耗12.4％,11.3％,10.4％和11.6％.     

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.     

Artificial bee colony based algorithm for maximum power point tracking (MPPT) for PV systems operating under partial shaded conditions

Artificial bee colony (ABC) algorithm has several characteristics that make it more attractive than other bio-inspired methods. Particularly, it is simple, it uses fewer control parameters and its convergence is independent of the initial conditions. In this paper, a novel artificial bee colony based maximum power point tracking algorithm (MPPT) is proposed. The developed algorithm, does not allow only overcoming the common drawback of the conventional MPPT methods, but it gives a simple and a robust MPPT scheme. A co-simulation methodology, combining Matlab/Simulink™ and Cadence/Pspice™, is used to verify the effectiveness of the proposed method and compare its performance, under dynamic weather conditions, with that of the Particle Swarm Optimization (PSO) based MPPT algorithm. Moreover, a laboratory setup has been realized and used to experimentally validate the proposed ABC-based MPPT algorithm. Simulation and experimental results have shown the satisfactory performance of the proposed approach.     

Voltage reference architectures for low-supply-voltage low-power applications

This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm² and 0.08 mm², respectively.     

基于服务器端会话追踪的Web查询服务的研究

在探讨了Web查询服务的典型模型后,论文阐述了服务器端会话追踪机制的实现方式,设计了基于服务器端会话追踪的Web查询服务的典型解决方案。该设计方案可以较为安全地保存和维护客户的上下文信息,可靠地跟踪用户查询所处的状态,有效地实现有状态的Web查询服务。     

以一种新的距离度量作为反馈的相关跟踪方法

基于相关的模板匹配方法在图像跟踪中得到了广泛的应用,但是这种方法的主要缺点是对图像噪声非常敏感,而且由这种方法得出的相关曲面比较平坦。为了有效抑制噪声和局部遮挡对图像的影响,提出用鲁棒统计中的一个值代替相关值作为距离度量。它不是计算两幅图像的对应像素差值,而是计算两幅图像中差别不大的对应像素对的个数。实验证明这样得到的曲面相对　　收稿日期:2003 08 31;　修订日期:2003 10 28作者简介:张桂林(1944 ),男,天津人,教授,博士生导师,主要研究方向为自动识别、人体生物统计特征识别、图像处理算法与系统性能评估等。　　　　　　　要尖锐得多。当上述的距离度量应用于跟踪过程中时,模板的合理更新对跟踪非常重要。基于上述的距离度量方法,提出了一种新的模板更新策略。利用两幅图像中近似像素在整修匹配模板像素中所占的比例大小决定加权系数。这种加权策略可以自适应地根据图像序列的变化选择更新相关模板,同时在一定程度上减小模板漂移的危险。     

用DSP实现多目标实时跟踪

介绍了在 TMS3 2 0 C62 0 3上实现 4个目标的快速跟踪技术。为了提高实时性和精确度 ,采用线性汇编优化实现。1个 3 2 0× 160主窗口的 DSP平均处理时间为 2 m s,3个 60× 60副窗口的 DSP平均处理时间各为 0 .4ms,实现了复杂背景下低对比度目标的快速跟踪。实验结果证明跟踪效果良好 ,解决了以前窗口开不大、跟踪速度慢的问题     

Chemische Zusammensetzung und Mikrostruktur polymerabgeleiteter Gläser und Keramiken im System Si–C–O. Teil 2: Charakterisierung der Gefügeausbildung mittels hochauflösender Durchstrahlungselektronenmikroskopie und Feinbereichsbeugung

Chemical Composition and Microstructure of Polymer‐Derived Glasses and Ceramics in the Si–C–O System. Part 2: Characterization of microstructure formation by means of high‐resolution transmission electron microscopy and selected area diffraction Liquid or solid silicone resins represent the economically most interesting class of organic precursors for the pyrolytic production of glass and ceramics materials on silicon basis. As dense, dimensionally stable components can be cost‐effectively achieved by admixing reactive filler powders, chemical composition and microstructure development of the polymer‐derived residues must be exactly known during thermal decomposition. Thus, in the present work, glasses and ceramics produced by pyrolysis of the model precursor polymethylsiloxane at temperatures from 525 to 1550 °C are investigated. In part 1, by means of analytical electron microscopy, the bonding state of silicon was determined on a nanometre scale and the phase separation of the metastable Si–C–O matrix into SiO₂, C and SiC was proved. The in‐situ crystallization could be considerably accelerated by adding fine‐grained powder of inert fillers, such as Al₂O₃ or SiC, which permits effective process control. In part 2, the microstructure is characterized by high‐resolution transmission electron microscopy and selected area diffraction. Turbostratic carbon and cubic β‐SiC precipitate as crystallization products. Theses phases are embedded in an amorphous matrix. Inert fillers reduce the crystallization temperature by several hundred °C. In this case, the polymer‐derived Si–C–O material acts as a binding agent between the powder particles. Reaction layer formation does not occur. On the investigated pyrolysis conditions, no crystallization of SiO₂ was observed.     

NMOS器件两次沟道注入杂质分布和阈电压计算

分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。对两次注入杂质的扩散分别提取了扩散系数的氧化增强系数、氧化衰减系数和有效杂地系数，给出了表面浓度与工艺参数之间的模拟关系式，以峰值浓度为强反型条件计算了开启电压，文章还给出了开启电压、氧化条件、不同注入组合之间的关系式。