单向载流子传输光电探测器模拟

用Atlas软件对单向载流子传输光电探测器(uni-traveling-carrier photodetector,UTC-PD)进行了模拟,研究了器件的基本工作原理,着重讨论了器件性能与外延层结构的关系.设计出的UTC-PD可同时具有高的响应度(≥0.18A/W)和宽的3dB带宽(≥100GHz).与传统的pin光电探测器相比简化了前端电路结构,降低了噪声,节约了成本,可以应用于超高速光互联.     

Ultraviolet photoresponse of ZnO nanostructured AlGaN/GaN HEMTs

We present the first active visible blind ultraviolet (UV) photodetector based on zinc oxide (ZnO) nanostructured AlGaN/GaN high electron mobility transistors (HEMTs). The ZnO nanorods (NRs) are selectively grown on the gate area by using hydrothermal method. It is shown that ZnO nanorod (NR)-gated UV detectors exhibit much superior performance in terms of response speed and recovery time to those of seed-layer-gated detectors. It is also found that the best response speed (~10 and~190 ms) and responsivity (~1.1×10⁵ A/W) were observed from detectors of the shortest gate length of 2 µm among our NR-gated devices of three different gate dimensions, and this responsivity is about one order higher than the best performance of ZnO NR-based UV detectors reported to date.     

双向光收发组件探测器端耦合和封装工艺分析

探测器响应度直接影响双向光收发组件（bi-directional optical sub-assembly，BOSA）的性能，探测器端的耦合和封装在BOSA生产中占据重要地位。为了系统分析BOSA生产中各偏移因素对探测器端耦合的影响，选择探测器电流响应度作为耦合标准进行实验，并通过分析实验结果来得出BOSA探测器端耦合和封装过程中的改进措施。参考BOSA的实际光路，建立光纤-波片-芯片耦合模型，模拟了光束偏移与耦合效率的关系；研究了BOSA耦合和封装工艺中产生的偏移，并分析它们对探测器端耦合效率的影响。随后使用自动耦合设备，对BOSA探测器端进行耦合实验，并分析波片角度偏移、波片与探测器透镜的高度差、探测器透镜水平偏移对耦合效率的影响。实验结果表明：探测器透镜水平偏移对耦合效率的影响最大，波片角度偏移、波片与探测器透镜的高度差对耦合效率的影响较小。研究结果为BOSA探测器端的耦合和封装提供了系统的理论指导，对BOSA的实际生产有一定参考价值。     

4H-SiC 雪崩光电探测器中倍增层参数的优化模拟

应用ATLAS模拟软件,设计了吸收层和倍增层分离的（SAM）4H-SiC 雪崩光电探测器（APD）结构。分析了不同外延层厚度和掺杂浓度对器件光谱响应的影响,对倍增层参数进行优化模拟,得出倍增层的最优化厚度为0.26μm,掺杂浓度为9.0×1017cm^-3。模拟分析了APD的反向IV特性、光增益、不同偏压下的光谱响应和探测率等,结果显示该APD在较低的击穿电压66.4V下可获得较高的倍增因子105;在0V偏压下峰值响应波长（250nm）处的响应度为0.11A/W,相应的量子效率为58%;临近击穿电压时,紫外可见比仍可达1.5×103;其归一化探测率最大可达1.5×1016cmHz ^1/2 W^-1。结果显示该APD具有较好的紫外探测性能。     

A different approach for determining the responsivity of n~+p detectors using scanning electron microscopy

正This paper explores an alternative to the standard method of studying the responsivities(the input-output gain) and other behaviours of detectors at low electron energy.The research does not aim to compare the results of differently doped n~+p detectors;its purpose is to provide an alternative characterization method(using scanning electron microscopy) to those used in previous studies on the responsivity of n~+p doped detectors as a function of the electron radiation energy and other interface parameters.     

光功率在线测量方法及应用

光纤保护在通道告警或定检时，需要对光缆的入纤功率和出纤功率进行检测，校对光缆的传输衰耗，判断装置收信功率是否正常。这带来了大量的工作量，并容易产生人为隐患。为了避免出现这一情况，文中设计了一种光功率的在线测量方法。不需要插拔光纤，保护装置就能测量出光纤中的收信功率。由于测量时不需要断开光纤通道，因此该测量方法对光纤通道损伤小，避免了人为操作造成的通道隐患。     

Infrared Filter Radiometers for Thermodynamic Temperature Determination below 660 °C

At the Physikalisch-Technische Bundesanstalt (PTB), absolutely-calibrated filter radiometers based on silicon photodiodes are routinely used for thermodynamic temperature determinations of blackbodies in the range from the zinc fixed point (FP) (419 °C) up to 3,000 °C. To extend the temperature range down to the tin FP (232 °C), we have designed two new filter radiometers based on indium gallium arsenide (InGaAs) photodiodes with center wavelengths at 1,300 nm and 1,550 nm. For the absolute calibration of the spectral irradiance responsivity of the new InGaAs filter radiometers, the spectral responsivity measurement in the near-infrared (NIR) spectral range has been significantly improved. With a newly developed tuneable laser and monochromator-based cryogenic radiometer facility, the relative standard uncertainty of the NIR spectral responsivity has been reduced from 0.17 % to about 0.03 %. By using the calibrated InGaAs filter radiometer in conjunction with the large-area double sodium heat pipe of the PTB, the first results for the difference between the thermodynamic temperature T and the ITS-90 temperature T ₉₀ in the temperature range from the zinc FP up to the aluminum FP (660 °C) are presented. The values for T – T ₉₀ determined with the new InGaAs filter radiometers are consistent within their relative standard uncertainty of about 30 mK at 419 °C to about 60 mK at 660 °C. References to commercial products are for identification purposes only and constitute neither endorsement nor representation that the item identified is the best available for the stated purpose.