Enhance cycling performance of LiMn2O4 cathode by Sr2+ and Cr3+ doping

Spinel LiSr_0·1Cr_0·1Mn_1·8O₄ was synthesised by high temperature solid state method in order to enhance the electrochemical performance. The LiSr_0·1Cr_0·1Mn_1·8O₄ (LSCMO) materials were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrochemical tests. The XRD and SEM studies confirm that LSCMO had spinel crystal structure with a space group of Fd3m, and the particle of LSCMO shows irregular shape. The cyclic voltammetry data illustrated that the heavy current charge–discharge performance of LMO was improved by Sr²⁺ and Cr³⁺ doping. The galvanostatic charge–discharge of LSCMO cathode materials was measured at 1, 5, 10 and 20 C. The results indicated that LSCMO improved the capacity retention.     

MPTA型原油脱金属剂的工业应用

在对高金属含量原油进行初步评价的基础上，利用SH—Ⅰ型电脱盐试验仪对自主开发的MPTA型原油脱金属剂进行了原油脱金属的实验室研究。结果表明，当MPTA型脱金属剂加入量为250μg／g时，钙的脱除率可达97．4％，并且对其它金属元素，如镍、铁、钠、锰、铝和钒也有明显的脱除效果。该剂在山东恒源石油化工股份有限公司重交沥青车间500kt／a的电脱盐装置上进行原油脱金属工业试验的结果表明，经过二级电脱盐处理后，钙的脱除率达到99．1％，钠的脱除率为94．6％，铁的脱除率为82．9％，并可在一定程度上降低原油中镍和铜的含量。使用MPTA型原油脱金属剂显著降低了一、二级电脱盐装置的电场电流，有利于炼油厂的节能降耗。     

新型交流脉冲MIG焊接法的研究

采用自行研制的具有方框形外特性的交流脉冲MIG焊接电源 ,又设计了双凹形焊接电流波形 ,即过零前后的电流波形均为脉冲大电流 ,有利于交流脉冲MIG焊接电弧的连续稳定。按照这个新型交流脉冲MIG焊接方法 ,不必加任何稳弧措施 ,可实现电弧的稳定燃烧 ,解决了电弧磁偏吹的问题 ,具有较好的焊接工艺性能 ,用于压力容器的全位置焊接和铝焊接均有很好的焊缝成型     

Magnetic field dependence of shielding current density in Y-Ba-Cu-O rings at 77 K

A method for contactless measurement of the shielding critical current density and its dependence on the external magnetic field is described and analyzed. The obtained values are compared with those measured resistively on two different samples. It is shown that the shielding critical current densityJ _cs and the intergranular transport current densityJ _cr are identical if the measurement conditions are similar. A degradation ofJ _cs measured in the external field with AC ripple has been observed.     

微型计算机的接触电流和接地线电流的测量

介绍了微型计算机的两种不同类型的泄漏电流的危害及其测量方法。     

Effects of hot-carrier stress on high performance polycrystalline silicon thin film transistor with a single perpendicular grain boundary

This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower.     

Modeling and Analysis of a Long Thin Conducting Stripline

A long thin conducting stripline embedded in a dielectric and centered between two large conducting plates, i.e., the stripline environment, is considered. The stripline is modeled as infinitely long, infinitely thin, and perfectly conducting by first considering a stripline of finite length, thickness, and conductivity in a dielectric layer. Starting from Maxwell's equations and assuming that the current on the stripline is a propagating wave in length direction, asymptotic expressions for the fields inside and in the neighbourhood of the stripline are deduced. These expressions are used to model the stripline in the stripline environment, which leads to a boundary-value problem for the electric potential. This problem is solved by two different approaches, leading to integral equations for the current and for an auxiliary function describing the electric potential. A relation between the current and the auxiliary function is deduced, which is used to obtain asymptotic expressions for current and impedance. Results are compared with a numerical solution of the integral equation for the current and with results in literature.     

Operation of superconducting fault current limiter using vacuum interrupter driven by electromagnetic repulsion force for commutating switch

Using conventional high‐temperature superconducting wire, a model superconducting fault current limiter (SFCL) is made and tested. Solenoid coil using Bi2223 silver sheath wire is so made that inductance is as small as possible and a vacuum interrupter is connected in series to it. A conventional reactor coil is connected in parallel. When the fault current flows in this equipment, superconducting wire is quenched and current is transferred into the parallel coil because of voltage drop of superconducting wire. This large current in parallel coil actuates magnetic repulsion mechanism of vacuum interrupter. Due to opening of vacuum interrupter, the current in superconducting wire is broken. By using this equipment, current flow time in superconducting wire can be easily minimized. On the other hand, the fault current is also easily limited by large reactance of parallel coil. © 2008 Wiley Periodicals, Inc. Electr Eng Jpn, 164(1): 52–61, 2008; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20315     

天津独流减河工程监控系统现地通信单元设计

提出一种配电网电容电流测量的新方法，在零序电压互感器的开口三角侧串联一个可调电感，通过注入一个变频恒流信号寻找配电网的谐振频率，改变可调电感的数值后寻找另一谐振频率，联立2个谐振方程求解电容电流，该方法消除了电压互感器漏抗对测量的影响。开发了配电网电容电流测量仪，经模拟试验和现场测试表明，该方法具有安全、快捷、准确等特点，适用于中性点不接地或经随调式消弧线圈接地配电网。