Low threshold voltage,highly stable electroforming-free threshold switching characteristics in VOx films-based device

Threshold switching (TS) devices have evolved as one of the most promising elements in memory circuit due to their important significance in suppressing crosstalk current in the crisscross array structure. However, the issue of high threshold voltage (V_th) and low stability still restricts their potential applications. Herein, the vanadium oxide (VO_x) films deposited by the pulsed laser deposition (PLD) method are adopted as the switching layer to construct the TS devices. The TS devices with Pt/VO_x/Pt/PI structure exhibit non-polar, electroforming-free, and volatile TS characteristics with an ultralow V_th (+0.48 V/−0.48 V). Besides that, the TS devices also demonstrates high stability, without obviously performance degradations after 350 cycles of endurance measurements. Additionally, the transition mechanism is mainly attributed to the synergistic effect of metal-insulator transition of VO₂ and oxygen vacancies. Furthermore, the nonvolatile bipolar resistance switching behaviors can be obtained by changing oxygen pressure during the deposition process for switching films. This work demonstrates that vanadium oxide film is a good candidate as switching layer for applications in the TS devices and opens an avenue for future electronics.     

Optical properties of transparent polycrystalline ruby (Cr:Al2O3) fabricated by high-pressure spark plasma sintering

Doped transparent ceramics with high optical quality can serve as materials for photonic applications such as laser gain media. In that regard, transparent polycrystalline alumina has potential for high-power applications due to its excellent physical and chemical properties, combined with unique doping possibilities. However, optical birefringence of Al₂O₃ crystals make achieving sufficiently high optical transmittance a processing challenge. In the present study, we demonstrated fabrication of highly transparent 0.5 at.% Cr:Al₂O₃ ceramics by high-pressure spark plasma sintering (HPSPS). The optical properties of these polycrystalline ruby ceramics were analyzed in order to assess possible laser operation (at 694.3 nm). The obtained ceramics exhibit high in-line transmittance (～72.5 % at 700 nm), equivalent to a scattering coefficient of 2.15 cm^?1, and characteristic ruby photoluminescence. The theoretically estimated lasing threshold and percentage of absorbed pump power indicate that such ruby ceramic lasers could operate at reasonable thresholds of 80?225 mW with short lengths of 0.5?5 mm. Thus, HPSPS is a promising method for producing laser-quality doped transparent ceramics for compact laser systems.     

Noncentrosymmetric Tetrel Pnictides RuSi4P4 and IrSi3P3: Nonlinear Optical Materials with Outstanding Laser Damage Threshold

Noncentrosymmetric (NCS) tetrel pnictides have recently generated interest as nonlinear optical (NLO) materials due to their second harmonic generation (SHG) activity and large laser damage threshold (LDT). Herein nonmetal-rich silicon phosphides RuSi₄P₄ and IrSi₃P₃ are synthesized and characterized. Their crystal structures are reinvestigated using single crystal X-ray diffraction and ²⁹Si and ³¹P magic angle spinning NMR. In agreement with previous report RuSi₄P₄ crystallizes in NCS space group P1, while IrSi₃P₃ is found to crystallize in NCS space group Cm, in contrast with the previously reported space group C2. A combination of DFT calculations and diffuse reflectance measurements reveals RuSi₄P₄ and IrSi₃P₃ to be wide bandgap (E_g) semiconductors, E_g = 1.9 and 1.8 eV, respectively. RuSi₄P₄ and IrSi₃P₃ outperform the current state-of-the-art infrared SHG material, AgGaS₂, both in SHG activity and laser inducer damage threshold. Due to the combination of high thermal stabilities (up to 1373 K), wide bandgaps (≈2 eV), NCS crystal structures, strong SHG responses, and large LDT values, RuSi₄P₄ and IrSi₃P₃ are promising candidates for longer wavelength NLO materials.     

加权信息熵与增强局部二值模式结合的人脸识别

针对人脸识别因光照、姿态、表情、遮挡及噪声等多种因素的影响而导致的识别率不高的问题，提出一种加权信息熵（IEw）与自适应阈值环形局部二值模式（ATRLBP）算子相结合的人脸识别方法（IE （w） ATR-LBP）。首先，从原始人脸图像分块提取信息熵，得到每个子块的IEw；然后，利用ATRLBP算子分别对每个人脸子块提取特征从而得到概率直方图；最后，将各个块的IEw与概率直方图相乘，再串联成为原始人脸图像最后的特征直方图，并利用支持向量机（SVM）对人脸进行识别。在AR人脸库的表情、光照、遮挡A和遮挡B四个数据集上，IE （w） ATR-LBP方法分别取得了98.37%、94.17%、98.20%和99.34%的识别率。在ORL人脸库上，IE （w） ATR-LBP方法的最大识别率为99.85%；而且在ORL人脸库5次不同训练样本的实验中，与无噪声时相比，加入高斯和椒盐噪声后的平均识别率分别下降了14.04和2.95个百分点。实验结果表明，IE （w） ATR-LBP方法能够有效提高人脸在受光照、姿态、遮挡等影响时的识别率，尤其是存在表情变化及脉冲类噪声干扰时的识别率。     

面向电信承载网的监控系统设计与实现

面对电信承载网连接的日益增长的海量终端设备，运营商需要结合网络拓扑对终端设备产生的数据进行高效的汇聚统计、异常分析、故障定位处理等操作。针对已有系统存在的操作困难、分析效率低等问题，设计与实现了一个面向电信承载网的高效监控系统，提供实时与离线数据分析和多维可视化分析的能力。对网管、认证、终端等系统及设备采集的数据进行结构化存储，对采集的数据进行拓扑相关性和时间序列方法分析，根据分析结果实现基于动态阈值控制的异常实时告警、定位等操作，并提供多维度可视化分析对网络状态进行实时监控。实际应用结果表明，该系统性能优异，具有良好交互性，能较好地满足承载网运维人员业务分析需求。     

异质性环境规制对绿色全要素生产率的影响机制——基于能源消费结构的调节作用

为探讨能源消费结构调节下异质性环境规制对绿色全要素生产率的影响机制，论文利用SBM方向距离函数测得全国各省市“经济-资源-环境-社会”四位一体的绿色全要素生产率，并将环境规制工具分为命令控制型、经济激励型、治理投入型和公众参与型4类，构建了空间杜宾模型以及门槛效应模型，进而得出在能源消费结构调节下，异质性环境规制对绿色全要素生产率的直接作用、间接作用以及空间溢出效应。研究结果表明：1）经济激励型和公众参与型环境规制通过调节能源消费结构对当地和邻地的绿色全要素生产率产生影响；2）在门槛检验方面，能源消费结构对命令控制型、经济激励型和公众参与型环境规制影响绿色全要素生产率存在门槛效应，同时在能源消费结构调节下，命令控制型和经济激励型环境规制对其本身对绿色全要素生产率的间接作用存在门槛效应。建议政府在制定环境规制时要考虑到其与能源消费结构的交互作用，并且在不同能源消费水平地区采用适宜的规制方法和强度，以更好地发挥环境规制作用。     

基于局部放电法的矿用高压电缆信号去噪算法研究

干扰噪声直接影响局部放电法有效检测矿用高压电缆故障。基于局部放电法，综合采用理论计算、仿真实验、现场试验的方法，对比分析了短时傅里叶变换和傅里叶分析去噪法的原理和优缺点，提出了一种矿用高压电缆的局部放电去噪算法——小波阈值去噪法，同时，选择了合理的阈值函数和去噪流程。基于此，采用白噪声和连续周期信号作为高压电缆的干扰噪声，进行了模拟仿真实验。结果表明，小波阈值去噪法可有效抑制白噪声，其中，Db2小波性能和去噪效果最好；同时，现场试验结果显示，去噪后信噪比得到了显著增加，验证了小波阈值去噪法的合理性和可靠性。     

基于机器视觉的手机电池表面缺陷检测

针对手机电池表面质量人工检测情况,开发了电池表面缺陷无损检测系统软件。首先电池表面经过倾斜矫正、感兴趣区域提取和字符灰度值修改等预处理操作,通过基于灰度密度分布和灰度差的自适应阈值亮度法对感兴趣区域进行子图像遍历,融合有重合区域的缺陷子图像并滤除没有明显缺陷的区域;然后采用支持向量机多种类分类法,提取二值图像像素分布规律作为训练特征,识别电池表面缺陷种类;最后设计了人机交互界面,确定最佳的可变参数,实验测试缺陷识别率达95%以上。     

基于HECC的门限群签密研究

分析了已有的门限群签密方案,针对现有方案中抗合谋攻击及身份追查等不足的问题,在(t,n)门限签密的基础上,基于HECC提出了一种可抗合谋攻击、身份可追查的高安全性门限群签密方案。该方案在可抵御合谋攻击的同时,可分辨攻击是来自于群成员还是外部,并可针对群成员的欺诈行为进行身份追查。该方案的安全性是建立在超椭圆曲线离散对数问题的难解性上,在保障安全的同时,也具备了HECC的诸多优点。