THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.     

GOS+MU:一种查询对象选择新方法

在分析单一MU(Most Uncertainty)采样缺陷的基础上,提出一种"全局最优搜寻"方法 GOS(Global Optimal Search),并结合MU共同完成查询选择。GOS+MU方法中,GOS着眼全局寻找目标,在应用环境能提供的训练样本数量有限、分类器受训不充分时,该方法选择的对象学习价值高,能快速推进分类器学习进程;MU则能够在GOS采样失效情形下,利用分类器当前训练成果,选择查询不确定性最强的样本补充训练集。通过对网络商品的用户评论进行分类仿真,并比较其他采样学习方法的效果,证明了GOS+MU方法在压缩学习成本、提高训练效率方面的有效性。     

基于关键路径延时检测的自适应电压缩减技术

为了减小传统的最差情况设计方法引入的电压裕量,提出了一种变化可知的自适应电压缩减(AVS)技术,通过调整电源电压来降低电路功耗.自适应电压缩减技术基于检测关键路径的延时变化,基于此设计了一款预错误原位延时检测电路,可以检测关键路径延时并输出预错误信号,进而控制单元可根据反馈回的预错误信号的个数调整系统电压.本芯片采用SMIC180 nm工艺设计验证,仿真分析表明,采用自适应电压缩减技术后,4个目标验证电路分别节省功耗12.4％,11.3％,10.4％和11.6％.     

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.     

Voltage reference architectures for low-supply-voltage low-power applications

This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm² and 0.08 mm², respectively.     

Effect of microstructure on the fatigue crack growth behaviour of a near-α Ti alloy

Fatigue crack growth behaviour of Ti–6Al–2Zr–1.5Mo–1.5V (VT-20 a near-α Ti alloy) was studied in lamellar, bimodal and acicular microstructural conditions. Fatigue crack growth tests at both increasing and decreasing stress intensity factor range values were performed at ambient temperature and a loading ratio of 0.3 using compact tension samples. Lamellar and acicular microstructures showed lower fatigue crack growth rates as compared to the bimodal microstructure due to the tortuous nature of cracks in the former and the cleavage of primary α in the latter. The threshold stress intensity factor range was highest for acicular microstructure.     

小波变换分离太阳射电频谱图中的纤维结构

太阳射电爆发纤维精细结构是太阳射电爆发活动中一类重要的观测现象,利用二维小波变换对纤维精细结构动态频谱图进行处理,分离频谱图中的纤维结构。首先对原始频谱图实行多层小波变换,由低频分量重构原始图像,就可得到爆发的背景信息,令原始频谱图减去背景并经过阈值处理后,便可将原始频谱图中的纤维结构很好地分离出来。     

基于主体外部轮廓的照片分割算法

在实际应用中常常需要将人像从照片的背景中有效地分割出来，通常的做法是通过提取照片中人像各部分特征来实现分割，其缺陷是计算复杂度较大，分割效果受各种干扰因素影响很大。现提出了一种基于主体外部轮廓信息的照片分割算法，通过梯度锐化、边缘保护、临近像素点相似度比较来确定图像的边界，该算法对于具有相对均匀背景的照片具有较高的计算效率。     

Chemische Zusammensetzung und Mikrostruktur polymerabgeleiteter Gläser und Keramiken im System Si–C–O. Teil 2: Charakterisierung der Gefügeausbildung mittels hochauflösender Durchstrahlungselektronenmikroskopie und Feinbereichsbeugung

Chemical Composition and Microstructure of Polymer‐Derived Glasses and Ceramics in the Si–C–O System. Part 2: Characterization of microstructure formation by means of high‐resolution transmission electron microscopy and selected area diffraction Liquid or solid silicone resins represent the economically most interesting class of organic precursors for the pyrolytic production of glass and ceramics materials on silicon basis. As dense, dimensionally stable components can be cost‐effectively achieved by admixing reactive filler powders, chemical composition and microstructure development of the polymer‐derived residues must be exactly known during thermal decomposition. Thus, in the present work, glasses and ceramics produced by pyrolysis of the model precursor polymethylsiloxane at temperatures from 525 to 1550 °C are investigated. In part 1, by means of analytical electron microscopy, the bonding state of silicon was determined on a nanometre scale and the phase separation of the metastable Si–C–O matrix into SiO₂, C and SiC was proved. The in‐situ crystallization could be considerably accelerated by adding fine‐grained powder of inert fillers, such as Al₂O₃ or SiC, which permits effective process control. In part 2, the microstructure is characterized by high‐resolution transmission electron microscopy and selected area diffraction. Turbostratic carbon and cubic β‐SiC precipitate as crystallization products. Theses phases are embedded in an amorphous matrix. Inert fillers reduce the crystallization temperature by several hundred °C. In this case, the polymer‐derived Si–C–O material acts as a binding agent between the powder particles. Reaction layer formation does not occur. On the investigated pyrolysis conditions, no crystallization of SiO₂ was observed.     

On the corrosion fatigue crack initiation model and expression of metallic notched elements

In the present study, attempts are made to extend the application of the mechanical model for the fatigue crack initiation (FCI) and the FCI life formula of metallic notched elements in laboratory air to those in the corrosive environment. The test results and analysis of the corrosion FCI (CFCI) life of aluminum alloys and Ti---6A1---4V show that the expression of the CFCI life obtained by modifying the FCI life formula in laboratory air can give a good fit to the test results of the CFCI life. The salt water (3.5% NaCl) environment has no effects on the CFCI resistant coefficient compared with the FCI resistant coefficient in laboratory air. However, 3.5% NaCl environment greatly decreases the CFCI threshold of aluminum alloy, but has little effect on the CFCI threshold of Ti---6A1---4V. The loading frequency ranging from 1 Hz to 10 Hz has no appreciable effect on the CFCI life, and thus, the CFCI threshold of aluminum alloys investigated. Hence, the expression for the CFCI life of metallic notched elements proposed in this study is a better one, which reveals a correlation between the CFCI life and the governing parameters, such as, the geometry of the notched elements, the nominal stress range, the stress ratio, the tensile properties and the CFCI threshold. However, this new expression of the CFCI life needs to be verified by more test results.