Experimental study on the heat transfer and flow characteristics of nanorefrigerants inside a corrugated tube

The heat transfer and flow characteristics of MWCNT-R141b nanorefrigerant with different mass fractions have been studied through experiments. Experimental results were compared with existing correlations. A two-step method was used to prepare the nanorefrigerants. Span-80 was used as surfactant with an average particle diameter of 20 nm. Transmittance method was used to evaluate the stability of nanorefrigerants. Results showed that the stability of MWCNT-R141b nanorefrigerant, which is the added dispersant, was good during the experiments. The 0.3 wt% MWCNT-R141b nanorefrigerants had optimal heat transfer enhancement effects compared with pure refrigerants. The maximum Nusselt number increased by 40%. The specific pressure drop of nanorefrigerant increased as the Reynolds number (Re) increased, and the specific pressure drop of the pure refrigerant was minimum, which is similar to R141b.     

基于关键路径延时检测的自适应电压缩减技术

为了减小传统的最差情况设计方法引入的电压裕量,提出了一种变化可知的自适应电压缩减(AVS)技术,通过调整电源电压来降低电路功耗.自适应电压缩减技术基于检测关键路径的延时变化,基于此设计了一款预错误原位延时检测电路,可以检测关键路径延时并输出预错误信号,进而控制单元可根据反馈回的预错误信号的个数调整系统电压.本芯片采用SMIC180 nm工艺设计验证,仿真分析表明,采用自适应电压缩减技术后,4个目标验证电路分别节省功耗12.4％,11.3％,10.4％和11.6％.     

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.     

基于云概率密度分布估计的大坝监测数据分析

大坝运行监测易受自然环境和监测条件影响，存在时间和空间上的变异性，监测数据具有不确定性。以云理论的随机性和不确定性分析方法为基础，并与空间数据辐射思想相结合，建立了云滴概率密度分布估计模型，然后导出云概率密度分布函数，依据样本监测数据推求母体空间数据的分布特征，并设计了基于逆向云算法云变换的计算程序。分析陆浑水库1979~1999年测压管监测数据和位移变形数据的云概率密度分布特征和云数字特征，得出了20 a来大坝的数据分布特征和运行状态。监测数据分析结果表明，云概率密度分布估计不仅能有效合理地分析大坝的运行状态，而且能够依据云数字特征来判断监测状态和监测环境的异常变化。      

Voltage reference architectures for low-supply-voltage low-power applications

This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm² and 0.08 mm², respectively.     

Recent-onset ecstasy use: Association with deviant behaviors and psychiatric comorbidity.

Background: Despite increases in ecstasy (MDMA) use in the United States, little is known about characteristics linked with recent-onset ecstasy use, especially psychiatric symptoms and deviant behaviors. Aims: To test whether individuals with high levels of other drug use are more likely to be recent-onset ecstasy users; to test whether psychiatric symptoms in adults are associated with recent-onset ecstasy use; to explore the association between recent-onset ecstasy use and concomitant deviant behaviors in adolescents and adults. Methods: Data from the 2001 National Survey on Drug Use and Health. Findings: Recent-onset ecstasy use was significantly more likely to occur among adolescents and adults (18-34 years old) who engaged in deviant behaviors during the past year as compared with those who did not engage in deviant behaviors during the past year. Higher levels of deviancy indicated a higher likelihood of being a recent-onset ecstasy user, and associations were strongest with nonviolent deviant behaviors such as selling illegal drugs and stealing. Associations between deviant behaviors and recent-onset ecstasy use were similar in strength to associations between deviant behaviors and recent-onset cocaine and marijuana use, respectively. Adults who had past-year psychiatric symptoms (both depressive and panic symptoms) were twice as likely to be recent-onset ecstasy users as compared with those without past-year psychiatric symptoms. Greater levels of drug involvement increased the odds of being a recent-onset ecstasy user. Conclusion: Recent-onset ecstasy use seems to be associated with a range of other behavioral problems and may reflect one aspect of a larger problem behavior syndrome. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

迷宫螺旋泵和密封工作特性研究

介绍了一种实测迷宫螺旋泵和密封工作特性的实验方法,通过该方法可以测得迷宫螺旋泵的泵送特性曲线、迷宫螺旋端面组合密封的最大密封压力以及端面开启的开始转速,具有一定的实用价值。     

基于新理念的杀毒软件

论文通过对病毒及反病毒技术的发展分析,总结了现有一些较优秀的杀毒软件的优缺点,提出了基于新理念的攻防查杀型杀毒软件的实现模型。     

Measurement and Identification of the Parameters of SPICE-Models of a Bipolar Transistor

A method of measuring and identifying the static parameters of a bipolar transistor is considered. The characteristic of the transistor, from which the parameters of the model are determined, is chosen depending on what group the calculated parameters belong to. The characteristics are measured in such a way that the equations of the model describing them can be reduced to the simplest form.     

浅谈应用标准进行软件测试

国家标准GB T175 44规定了软件包的质量要求及针对这些要求如何对软件包进行测试的细则。质量要求从产品描述、用户文档、程序及数据三个方面进行了规定 ,测试细则依据这些规定制定。ISO IEC912 6 (1991)版由ISO IEC 912 6 (软件产品质量 )和ISO IEC14 5 98(软件产品评测 )两个标准代替 ,ISO IEC912 6表述了软件产品质量的内部质量、外部质量和使用中的质量 ,规定了内部质量、外部质量的六个质量特性 ,并细分为 2 1个子特性 ,使用中的质量规定了四个使用质量特性 ,使用质量是指六个软件产品质量特性的综合效果。进行软件测试时 ,可以依据GB T175 44中的规定组织测试过程再结合ISO IEC912 6中的质量特性及子特性的规定确定测试需求的内容和测试的重点 ,利用ISO IEC912 6质量的规定建立质量评级的标准。