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1.
为了成功预测竹林山煤矿综放高瓦斯矿井大采高工作面煤层瓦斯涌出量,以主采3号煤层为主要研究对象,针对3号煤层以往开采情况,通过布设测点测量其煤层瓦斯含量和了解相邻矿井瓦斯含量,采用分源预测法、回归法及统计法等预测方法得到了3号煤层瓦斯含量的分布规律,并绘制了3号煤层的瓦斯含量等值线图。对矿井不同生产时期的瓦斯含量进行预测,得到了生产前期、中期及后期采区的最大绝对瓦斯涌出量和最大相对瓦斯涌出量,说明了竹林山煤矿各个时期均属于高瓦斯矿井。  相似文献   
2.
为了减小传统的最差情况设计方法引入的电压裕量,提出了一种变化可知的自适应电压缩减(AVS)技术,通过调整电源电压来降低电路功耗.自适应电压缩减技术基于检测关键路径的延时变化,基于此设计了一款预错误原位延时检测电路,可以检测关键路径延时并输出预错误信号,进而控制单元可根据反馈回的预错误信号的个数调整系统电压.本芯片采用SMIC180 nm工艺设计验证,仿真分析表明,采用自适应电压缩减技术后,4个目标验证电路分别节省功耗12.4%,11.3%,10.4%和11.6%.  相似文献   
3.
For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (Ron,sp) of 2  cm2, which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.  相似文献   
4.
《Microelectronics Journal》2015,46(11):1012-1019
This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm2 and 0.08 mm2, respectively.  相似文献   
5.
The conversion of lignocellulosic biomass (LCB) to microbial oils is attracting a growing amount of attention. However, the growth of the oleaginous yeast Rhodotorula glutinis on LCB hydrolysate (mainly rice straw) only will lead to a low lipid mass fraction, in the range of 10–20%. This study shows that the addition of crude glycerol to the LCB hydrolysate medium can efficiently raise the lipid mass fraction to the range of 30–40%. Crude glycerol is a by-product in the biodiesel production process. The use of renewable LCB hydrolysate and crude glycerol would greatly reduce the substrate cost for microbial oil production using R. glutinis. In addition, the results of experiments show that a low-cost airlift bioreactor is a more suitable fermentation process for the growth of R. glutinis than the use of a conventional agitation tank. When using mixed carbon sources of LCB hydrolysate with 30 kg m−3 of reducing sugars and 30 kg m−3 of crude glycerol, a maximal cell mass of 21.4 kg m−3 and lipid mass fraction of 58.5 ± 6.2 were achieved in an internal loop airlift bioreactor, and this process may have the potential to be applied in scale-up production.  相似文献   
6.
为了提高注入剖面测井的准确性,研制了一种新型注入剖面组合测井仪。该仪器由流量处理单元、伽马处理单元、井温处理单元、磁性定位处理单元、调制式传输、电源电路六部分组成。一次下井可同时测取流量、伽马、井温、磁性定位四组参数。具有测取资料精度高、单芯电缆传输、流量可单点测量也可连续测量以厦现场监测和维修方便等特点。  相似文献   
7.
分别利用Ga2O3粉末和Ga2O3凝胶作为Ga源,采用NH3为N源,在950℃下,分别将两种反应物与流动的NH3反应20 min合成了GaN微晶。用X射线衍射(XRD)、扫描电子显微镜(SEM)、选择区电子衍射(SAED)对微晶进行结构、形貌的分析,特别是对两种不同途径合成GaN微晶的XRD进行了分析比较。结果表明,当Ga源温度为950℃时两种不同的合成途径均可得到六方纤锌矿结构的GaN单晶颗粒,在氮化温度为850℃和900℃时,利用Ga2O3粉末作为Ga源,仅有少量的Ga2O3转变为GaN;而采用Ga2O3凝胶作为Ga源,在相同的温度下,大部分凝胶经过高温氨化反应均可转化为GaN。  相似文献   
8.
Chemical Composition and Microstructure of Polymer‐Derived Glasses and Ceramics in the Si–C–O System. Part 2: Characterization of microstructure formation by means of high‐resolution transmission electron microscopy and selected area diffraction Liquid or solid silicone resins represent the economically most interesting class of organic precursors for the pyrolytic production of glass and ceramics materials on silicon basis. As dense, dimensionally stable components can be cost‐effectively achieved by admixing reactive filler powders, chemical composition and microstructure development of the polymer‐derived residues must be exactly known during thermal decomposition. Thus, in the present work, glasses and ceramics produced by pyrolysis of the model precursor polymethylsiloxane at temperatures from 525 to 1550 °C are investigated. In part 1, by means of analytical electron microscopy, the bonding state of silicon was determined on a nanometre scale and the phase separation of the metastable Si–C–O matrix into SiO2, C and SiC was proved. The in‐situ crystallization could be considerably accelerated by adding fine‐grained powder of inert fillers, such as Al2O3 or SiC, which permits effective process control. In part 2, the microstructure is characterized by high‐resolution transmission electron microscopy and selected area diffraction. Turbostratic carbon and cubic β‐SiC precipitate as crystallization products. Theses phases are embedded in an amorphous matrix. Inert fillers reduce the crystallization temperature by several hundred °C. In this case, the polymer‐derived Si–C–O material acts as a binding agent between the powder particles. Reaction layer formation does not occur. On the investigated pyrolysis conditions, no crystallization of SiO2 was observed.  相似文献   
9.
NMOS器件两次沟道注入杂质分布和阈电压计算   总被引:1,自引:1,他引:0  
王纪民  蒋志 《微电子学》1997,27(2):121-124
分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。对两次注入杂质的扩散分别提取了扩散系数的氧化增强系数、氧化衰减系数和有效杂地系数,给出了表面浓度与工艺参数之间的模拟关系式,以峰值浓度为强反型条件计算了开启电压,文章还给出了开启电压、氧化条件、不同注入组合之间的关系式。  相似文献   
10.
This paper describes the dielectric breakdown characteristics of oil and oil‐impregnated paper for very fast transient (VFT) voltages. Blumlein circuits generate VFT voltages of 60 and 300 ns in a pulse width that simulates disconnecting switching surges in gas‐insulated switch gears. We measured the breakdown voltages of needle‐to‐plane, plane‐to‐plane oil gaps and several pieces of paper between plane electrodes for VFT and lightning impulse voltages. The measured data were formulated in V‐t characteristics and Weibull probability distributions. The inclination n of V‐t characteristics of insulating paper is 150, which is less than n = 13.7 of the plane‐to‐plane oil gap in the VFT time range. The shape parameters of Weibull distribution obtained in this study show that the scattering of breakdown voltages of paper is much less than that of oil. © 2002 Wiley Periodicals, Inc. Electr Eng Jpn, 141(4): 16–24, 2002; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.10043  相似文献   
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