Enhance cycling performance of LiMn2O4 cathode by Sr2+ and Cr3+ doping

Spinel LiSr_0·1Cr_0·1Mn_1·8O₄ was synthesised by high temperature solid state method in order to enhance the electrochemical performance. The LiSr_0·1Cr_0·1Mn_1·8O₄ (LSCMO) materials were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrochemical tests. The XRD and SEM studies confirm that LSCMO had spinel crystal structure with a space group of Fd3m, and the particle of LSCMO shows irregular shape. The cyclic voltammetry data illustrated that the heavy current charge–discharge performance of LMO was improved by Sr²⁺ and Cr³⁺ doping. The galvanostatic charge–discharge of LSCMO cathode materials was measured at 1, 5, 10 and 20 C. The results indicated that LSCMO improved the capacity retention.     

MPTA型原油脱金属剂的工业应用

在对高金属含量原油进行初步评价的基础上，利用SH—Ⅰ型电脱盐试验仪对自主开发的MPTA型原油脱金属剂进行了原油脱金属的实验室研究。结果表明，当MPTA型脱金属剂加入量为250μg／g时，钙的脱除率可达97．4％，并且对其它金属元素，如镍、铁、钠、锰、铝和钒也有明显的脱除效果。该剂在山东恒源石油化工股份有限公司重交沥青车间500kt／a的电脱盐装置上进行原油脱金属工业试验的结果表明，经过二级电脱盐处理后，钙的脱除率达到99．1％，钠的脱除率为94．6％，铁的脱除率为82．9％，并可在一定程度上降低原油中镍和铜的含量。使用MPTA型原油脱金属剂显著降低了一、二级电脱盐装置的电场电流，有利于炼油厂的节能降耗。     

超高压大容量铝电解电容器的研制

分析了大功率设备用超高压大容量铝电解电容器的特点,通过研制工作电解液、制订制作工艺及零部件设计方案,研制出的超高压大容量铝电解电容器具有损耗角正切小(tgδ为0.25)、承受纹波电流能力强(100 Hz,2.12～27.8 A)及寿命长的特点,耐久性达到85℃,5 000 h。     

An Analysis of Citation Counts of ETRI‐Invented US Patents

From its foundation until 2004, ETRI has registered over 1,000 US patents. This letter analyzes the characteristics of these patents and addresses the explanatory factors affecting their citation counts. For explanatory variables, research team related variables, invention specific variables, and geographical domain related variables are suggested. Zero‐altered count data models are used to test the impact of independent variables. A key finding is that technological cumulativeness, the scale of invention, outputs in the electronic field, and the degree of dependence on the US technology domain positively affect the citation counts of ETRI‐invented US patents. The magnitude of international presence appears to negatively affect the citation counts of ETRI‐invented US patents.     

基于开关电流技术的连续小波变换的实现方法

开关电流技术是一种新的模拟抽样数据处理技术。开关电流电路具有一般电路不具有的优点，与标准数字CMOS工艺兼容。连续小波变换是分析非平稳信号的有力工具，在信号处理上有广泛的应用。本文提出用开关电流技术实现连续小波变换的方法，并用Matlab仿真证明了其理论可行性。     

新型交流脉冲MIG焊接法的研究

采用自行研制的具有方框形外特性的交流脉冲MIG焊接电源 ,又设计了双凹形焊接电流波形 ,即过零前后的电流波形均为脉冲大电流 ,有利于交流脉冲MIG焊接电弧的连续稳定。按照这个新型交流脉冲MIG焊接方法 ,不必加任何稳弧措施 ,可实现电弧的稳定燃烧 ,解决了电弧磁偏吹的问题 ,具有较好的焊接工艺性能 ,用于压力容器的全位置焊接和铝焊接均有很好的焊缝成型     

Magnetic field dependence of shielding current density in Y-Ba-Cu-O rings at 77 K

A method for contactless measurement of the shielding critical current density and its dependence on the external magnetic field is described and analyzed. The obtained values are compared with those measured resistively on two different samples. It is shown that the shielding critical current densityJ _cs and the intergranular transport current densityJ _cr are identical if the measurement conditions are similar. A degradation ofJ _cs measured in the external field with AC ripple has been observed.     

微型计算机的接触电流和接地线电流的测量

介绍了微型计算机的两种不同类型的泄漏电流的危害及其测量方法。     

Effects of hot-carrier stress on high performance polycrystalline silicon thin film transistor with a single perpendicular grain boundary

This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower.