Samples in Si–Al-R-O-N (R = Y, Gd, Yb) systems were prepared by solid-state reactions using R2O3, Al2O3, SiO2 and Si3N4 powders as starting materials. X-ray diffraction was done to investigate RAM-J(R) solid solutions [RAM = R4Al2O9, J(R) = R4Si2N2O7] formation and their equilibrium with RSO (R4Si2O10). Phase relations between RAM, J(R) and RSO at 1700 °C were summarized in a phase diagram. It was determined that a limited solid solution of RAM and RSO could be formed along RAM-RSO tie-line, while RAM and J(R) form a continuous solid solution along RAM-J(R) tie-line. In RAM-J(R)-RSO ternary systems, the RAM-J(R) tie-lines were extended towards the RSO corner to form a continuous solid solution area of JRAMss (R = Y, Gd, Yb). The established phase relations in the Si–Al-R-O-N (R = Y, Gd, Yb) systems may facilitate compositional selections for developing JRAMss as monolithic ceramics or for SiC/Si3N4 based composites using the solid-solutions as a second refractory phase. 相似文献
Because of its ability to change optical absorption dynamically by applied electric field, nickel oxide (NiO) is a promising anodic material in smart windows, which can improve energy conversion efficiency in construction buildings. Although many works have achieved high electrochromic performance with different method. The underlying mechanism is still not fully investigated. In this article, we prepared the NiO films with large specific surface area and high stability by electron beam evaporation. X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) were employed to figure out the surface morphology and composition of as-deposited films. Afterwards, the electrochemical properties and optical performance of the prepared NiO films were investigated. On this basis, the origin of surface charge was fully analyzed by cyclic voltammetry and diffusion coefficient test. These experimental and theoretical results firmly confirm that both the surface reaction and capacitive effect bring about the excellent EC performance in NiO films. These results not only provide clear evidence about electrochemical kinetics in NiO films, but also offer some useful guidelines for the design of EC materials with higher performance and longer stability. 相似文献
Fully dense ceramics with retarded grain growth can be attained effectively at relatively low temperatures using a high-pressure sintering method. However, there is a paucity of in-depth research on the densification mechanism, grain growth process, grain boundary characterization, and residual stress. Using a strong, reliable die made from a carbon-fiber-reinforced carbon (Cf/C) composite for spark plasma sintering, two kinds of commercially pure α-Al2O3 powders, with average particle sizes of 220 nm and 3 μm, were sintered at relatively low temperatures and under high pressures of up to 200 MPa. The sintering densification temperature and the starting threshold temperature of grain growth (Tsg) were determined by the applied pressure and the surface energy relative to grain size, as they were both observed to increase with grain size and to decrease with applied pressure. Densification with limited grain coarsening occurred under an applied pressure of 200 MPa at 1050 °C for the 220 nm Al2O3 powder and 1400 °C for the 3 μm Al2O3 powder. The grain boundary energy, residual stress, and dislocation density of the ceramics sintered under high pressure and low temperature were higher than those of the samples sintered without additional pressure. Plastic deformation occurring at the contact area of the adjacent particles was proved to be the dominant mechanism for sintering under high pressure, and a mathematical model based on the plasticity mechanics and close packing of equal spheres was established. Based on the mathematical model, the predicted relative density of an Al2O3 compact can reach ~80 % via the plastic deformation mechanism, which fits well with experimental observations. The densification kinetics were investigated from the sintering parameters, i.e., the holding temperature, dwell time, and applied pressure. Diffusion, grain boundary sliding, and dislocation motion were assistant mechanisms in the final stage of sintering, as indicated by the stress exponent and the microstructural evolution. During the sintering of the 220 nm alumina at 1125 °C and 100 MPa, the deformation tends to increase defects and vacancies generation, both of which accelerate lattice diffusion and thus enhance grain growth. 相似文献
The direct-synthesis of conductive PbS quantum dot (QD) ink is facile, scalable, and low-cost, boosting the future commercialization of optoelectronics based on colloidal QDs. However, manipulating the QD matrix structures still is a challenge, which limits the corresponding QD solar cell performance. Here, for the first time a coordination-engineering strategy to finely adjust the matrix thickness around the QDs is presented, in which halogen salts are introduced into the reaction to convert the excessive insulating lead iodide into soluble iodoplumbate species. As a result, the obtained QD film exhibits shrunk insulating shells, leading to higher charge carrier transport and superior surface passivation compared to the control devices. A significantly improved power-conversion efficiency from 10.52% to 12.12% can be achieved after the matrix engineering. Therefore, the work shows high significance in promoting the practical application of directly synthesized PbS QD inks in large-area low-cost optoelectronic devices. 相似文献
High-density La0.9-xSrxK0.1MnO3 ceramics (LSKMO, A-site = La, Sr and K, 0 ≤ x ≤ 0.25) are successfully fabricated by using facile sol-gel method. Electrical properties are performed by using combination of phenomenological percolation (PP) model, double exchange (DE) mechanism, and Jahn-Teller (JT) effect. Moreover, X-ray diffraction and scanning electron microscopy are employed to analyze the structure and morphology of LSKMO ceramics. Valence states and ionic stoichiometry are assessed by using X-ray photoemission spectrometry. Results reveal that Sr2+ ions, substituting La3+ ions, significantly influenced DE mechanism and JT effect. In addition, Sr-doping plays essential role in improving electrical properties of LSKMO ceramics. At optimal doping content of x = 0.09, peak temperature coefficient of resistance (TCR) of the resistivity is found to be 11.56% K?1 at 297.15 K, which is optimal TCR for A-site K-occupied perovskite manganese oxides. These results confirm that polycrystalline LSKMO ceramics render high room-temperature TCR values due to Sr-doping. 相似文献
In this work, we developed a novel system of isovalent Zr4+ and donor Nb5+ co-doped CaCu3Ti4O12 (CCTO) ceramics to enhance dielectric response. The influences of Zr4+ and Nb5+ co-substituting on the colossal dielectric response and relaxation behavior of the CCTO ceramics fabricated by a conventional solid-phase synthesis method were investigated methodically. Co-doping of Zr4+ and Nb5+ ions leads to a significant reduction in grain size for the CCTO ceramics sintered at 1060 °C for 10 h. XRD and Raman results of the CaCu3Ti3.8-xZrxNb0.2O12 (CCTZNO) ceramics show a cubic perovskite structure with space group Im-3. The first principle calculation result exhibits a better thermodynamic stability of the CCTO structure co-doped with Zr4+ and Nb5+ ions than that of single-doped with Zr4+ or Nb5+ ion. Interestingly, the CCTZNO ceramics exhibit greatly improved dielectric constant (~105) at a frequency range of 102–105 Hz and at a temperature range of 20–210 °C, indicating a giant dielectric response within broader frequency and temperature ranges. The dielectric properties of CCTZNO ceramics were analyzed from the viewpoints of defect-dipole effect and internal barrier layer capacitance (IBLC) model. Accordingly, the immensely enhanced dielectric response is primarily ascribed to the complex defect dipoles associated with oxygen vacancies by co-doping Zr4+ and Nb5+ ions into CCTO structure. In addition, the obvious dielectric relaxation behavior has been found in CCTZNO ceramics, and the relaxation process in middle frequency regions is attributed to the grain boundary response confirmed by complex impedance spectroscopy and electric modulus. 相似文献
Laminated Si3N4/SiCw ceramics were successfully prepared by tape casting and hot-pressing. Its mechanical properties were measured and the impact resistance was discussed. The toughness of the laminated Si3N4/SiCw ceramics was 13.5 MPa m1/2, which was almost 1.6 times that of Si3N4/SiCw composite ceramics, namely 8.5 MPa m1/2. Moreover, the indentation strength of laminated Si3N4/SiCw ceramics was not sensitive to increasing indentation loads and exhibited a rising R-curve behaviour, indicating that the laminated Si3N4/SiCw ceramics had excellent impact resistance. The improved toughness and impact resistance of laminated Si3N4/SiCw ceramics was attributed to the residual stress caused by a thermal expansion coefficient mismatch between the different layers, resulting in crack deflection and bridging of SiC whiskers in the interface layer, thus consuming a large amount of fracture work. 相似文献
The traction motor is the power source of the locomotive. If the surface waviness occurs on the races of the motor bearing, it will cause abnormal vibration and noise, accelerate fatigue and wear, and seriously affect the stability and safety of the traction power transmission. In this paper, an excitation model coupling the time-varying displacement and contact stiffness excitations is adopted to investigate the effect of the surface waviness of the motor bearing on the traction motor under the excitation from the locomotive-track coupled system. The detailed mechanical power transmission path and the internal/external excitations (e.g., wheel–rail interaction, gear mesh, and internal interactions of the rolling bearing) of the locomotive are comprehensively considered to provide accurate dynamic loads for the traction motor. Effects of the wavenumber and amplitude of the surface waviness on the traction motor and its neighbor components of the locomotive are investigated. The results indicate that controlling the amplitude of the waviness and avoiding the wavenumber being an integer multiple of the number of the rollers are helpful for reducing the abnormal vibration and noise of the traction motor.
The Ag-Pd internal electrode of multilayer piezoelectric ceramics needs to be sintered below 1000°C, and lead wires and components need to be welded with lead-free solder at 260°C. PNN–PMW–PZT–xSr piezoelectric ceramics with high Curie temperature (Tc > 260°C) were synthesized at a low sintering temperature (960°C) to meet the requirements of multilayer piezoelectric devices. The relationship between structures (phase, domain, and microstructures) and electrical properties (piezo/ferroelectric properties, and dielectric relaxation) in the Sr2+ substituted ceramics was investigated. Rietveld refinement and Raman spectra show that Sr2+ substitution can cause the phase change and increase the force constant of [BO6] octahedron. The piezoelectric response increases with increasing the content of the tetragonal phase (CTP) in the rhombohedral-tetragonal (R-T) coexisted ceramics. The ceramics with 0.6 mol% Sr2+ substitution have minimum activation energy for domain wall movement (Ea) of 0.0362 eV which favors the formation of nanometer-sized domains, and possess excellent electrical properties (d33 = 623 pC/N, d33* =783 pm/V, Tc =295°C). The higher the CTP, the lower the Ea. The lower Ea favors the rotation of polarization direction and extension, and is beneficial to the generation of the nanometer-size domains, resulting in high piezoelectric properties. 相似文献
Mg(Ti1-xNbx)O3 (x = 0–0.09) ceramics were prepared by the conventional solid-state reaction method. The phase composition, sintering characteristics, microstructure and dielectric properties of Ti4+ replacement by Nb5+ in the formed solid solution Mg(Ti1-xNbx)O3 (x = 0–0.09) ceramics were systematically studied. The structural variations and influence of Nb5+ doping in Mg(Ti1-xNbx)O3 were also systematically investigated by X-ray diffraction and Raman spectroscopy, respectively. X-ray diffraction and its Rietveld refinement results confirmed that Mg(Ti1-xNbx)O3 (x = 0–0.09) ceramics crystallised into an ilmenite-type with R-3 (148) space group. The replacement of the low valence Ti4+ by the high valence Nb5+ can improve the dielectric properties of Mg(Ti1-xNbx)O3 (x = 0–0.09). This paper also studied the different sintering temperatures for Mg(Ti1-xNbx)O3 (x = 0–0.09) ceramics. The obtained results proved that 1350 °C is the best sintering temperature. The permittivity and Q × f initially increased and then decreased mainly due to the effects of porosity caused by the sintering temperature and the doping amount of Nb2O5, respectively. Furthermore, the increased Q × f is correlated to the increase in Ti–O bond strength as confirmed by Raman spectroscopy, and the electrons generated by the oxygen vacancies will be compensated by Nb5+ to a certain extent to suppress Ti4+ to Ti3+, which was confirmed by XPS. The increase in τf from ?47 ppm/°C to ?40.1 ppm/°C is due to the increment in cell polarisability. Another reason for the increased τf is the reduction in the distortion degree of the [TiO6] octahedral, which was also confirmed by Raman spectroscopy. Mg(Ti0.95Nb0.05)O3 ceramics sintered at 1350 °C for 2 h possessed excellent microwave dielectric properties of εr = 18.12, Q × f = 163618 GHz and τf = ?40.1 ppm/°C. 相似文献