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1.
《Food Control》2015
Bacillus cereus can cause emetic and diarrheal food poisoning. It is widespread in nature and therefore, considered a major foodborne pathogen. To develop a sensitive and reliable assay for detecting enterotoxin genes (nheA, entFM, hblD, cytK) and emetic toxin (ces), specific primers each targeting one individual gene were designed. Propidium monoazide (PMA) was coupled with the developed multiplex PCR (mPCR) for the detection of viable B. cereus. The inclusivity and exclusivity of the PMA-mPCR was confirmed using a panel of 44 strains including 17 emetic and 9 enterotoxic B. cereus reference strains and 18 non-target strains. The limit of detection (LOD) without PMA treatment in pure DNA was 2 pg/reaction tube. The LOD of mPCR assay in pure heat-killed dead bacteria was 4.0 × 102 CFU/mL. Also, the LOD on the viable bacteria with or without PMA treatment was similar (3.8 × 102 CFU/mL) showing that the PMA treatment did not significantly decrease sensitivity. Finally, the newly developed PMA-mPCR successfully detected 4.8 × 103 and 3.6 × 103 CFU/g of viable B. cereus F4810/72 (emetic) and B. cereus ATCC 12480 (enterotoxic) reference strains, respectively, in food samples. Hence, this study combines PMA and mPCR to detect viable B. cereus with a wide range of toxin detection (5 toxins). Thus, the novel PMA-mPCR assay developed in this study is a rapid and efficient diagnostic tool for the monitoring of viable B. cereus in food samples and potentially other samples via appropriate DNA extraction. 相似文献
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采用电声脉冲法(pulsed electro-acoustic method,PEA)研究了经过不同预处理温度处理后的高压直流电缆附件绝缘材料——硅橡胶(silicone rubber,SIR)及三元乙丙橡胶(ethylene propylene diene monomer,EPDM)绝缘层的空间电荷分布。为分析导致此空间电荷积累不同的原因,采用拉伸性能测试和动态热机械分析(dynamic thermal mechanical analysis,DMA)研究了高压直流电缆附件绝缘材料化学分子结构的变化。实验结果表明,SIR材料经过150℃预处理后,硫化更充分、交联密度增加,从而使得绝缘层中的空间电荷量减少,因此SIR的预处理以150℃为宜;EDPM材料经过150℃预处理后,综合表现为解聚反应,从而使得绝缘层中的空间电荷量增加,因此EDPM预处理温度以80℃为宜。 相似文献
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In this work, using Si interface passivation layer (IPL), we demonstrate n-MOSFET on p-type GaAs by varying physical-vapor-deposition (PVD) Si IPL thickness, S/D ion implantation condition, and different substrate doping concentration and post-metal annealing (PMA) condition. Using the optimized process, TaN/HfO2/GaAs n-MOSFETs made on p-GaAs substrates exhibit good electrical characteristics, equivalent oxide thickness (EOT) (∼3.7 nm), frequency dispersion (∼8%) and high maximum mobility (420 cm2/V s) with high temperature PMA (950 °C, 1 min) and good inversion. 相似文献
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Antoine Debuigne Marie HurtgenChristophe Detrembleur Christine JérômeChristopher Barner-Kowollik Thomas Junkers 《Progress in Polymer Science》2012,37(7):1004-1030
The current review focuses on the relevance and practical benefit of interpolymer radical coupling methods. The latter are developing rapidly and constitute a perfectly complementary macromolecular engineering toolbox to the controlled radical polymerization techniques (CRP). Indeed, all structures formed by CRP are likely to be prone to radical coupling reactions, which multiply the available synthetic possibilities. Basically, the coupling systems can be divided in two main categories. The first one, including the atom transfer radical coupling (ATRC), silane radical atom abstraction (SRAA) and cobalt-mediated radical coupling (CMRC), relies on the recombination of macroradicals produced from a dormant species. The second one, including atom transfer nitroxide radical coupling (ATNRC), single electron transfer nitroxide radical coupling (SETNRC), enhanced spin capturing polymerization (ESCP) and nitrone/nitroso mediated radical coupling (NMRC), makes use of a radical scavenger in order to promote the conjugation of the polymer chains. More than a compilation of macromolecular engineering achievements, the present review additionally aims to emphasize the particularities, synthetic potential and present limitations of each system. 相似文献
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The study of ultrathin ZrO2 films grown on surface passivated germanium substrates by plasma enhanced Atomic Layer Deposition (PEALD) has been carried out. Nitride passivation has been used to form an interfacial layer between ZrO2/Ge. The ultra-thin ZrO2 film deposited with thickness of ~5.75 nm and refractive index of ~2.05 as observed through ellipsometry. The Ge3d, Zr3d, N1s and O1s are XPS core level spectra's confirm the formation of GeON and ZrO2 ultra-thin films. The AFM results show the roughness of deposited films as low as 0.3 nm. The effect of post metallization annealing (PMA) on electrical properties of Au/Cr/ZrO2/GeON/Ge capacitors has been investigated. The improvement in k value (~38) and an EOT value (~0.5 nm) after PMA on Ge/GeON/ZrO2 stack has been observed. The flat band voltage and hysteresis of post metallization annealed devices has been reduced as compared to that of without PMA GeON/ZrO2 stack. 相似文献
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