Structural,electrical, and linear/nonlinear optical characteristics of thermally evaporated molybdenum oxide thin films

Homogeneous thin films of Molybdenum oxide (MoO₃) were grown on quartz and glass substrates using the thermal evaporation method. XRD results showed that the MoO₃ powder has a polycrystalline structure with an orthorhombic crystal system whereas the MoO₃ thin films have amorphous nature. SEM images showed that the MoO₃ thin films have a nearly uniform surfaces with worm-like shape grains. The film thickness influences on the linear and nonlinear optical characteristics of MoO₃ thin films that were examined using spectrophotometric measurements and from which, the linear optical constants of the MoO₃ thin films were estimated. The electronic transition type was determined as a direct allowed one. The values of the optical band gap were obtained to be in the range of 3.88–3.72 eV. The dispersion parameters, third-order nonlinear optical susceptibility, and the nonlinear refractive index of the MoO₃ thin films were determined and interpreted in the light of the single oscillator model. The temperature dependence of the DC electrical conductivity and the corresponding conduction mechanism for the MoO₃ films were investigated at temperatures ranging from 303 to 463 K.     

Characterization of Bi2O3 thin films for doping photoluminescent Er3+ ions

Undoped and Er³⁺-doped Bi₂O₃ thin films were sputter-deposited on Si(100) substrates. Sufficiently oxidized Bi₂O₃ films with refractive indices between 2.17?2.23 were obtained at a wavelength of 633 nm; these values are comparable to those of bulk Bi₂O₃ crystals. While the film composition was stable for deposition temperatures between room temperature (RT) and 450 °C, the refractive index steeply decreased above 450 °C and reached 1.4 at 600 °C. The lowering of the optical transmittance spectra indicated aggregation of metallic Bi and darkening of the film. All films exhibited X-ray diffraction patterns of α-Bi₂O₃. The direct and indirect bandgap energies derived from the Tauc plots were 3.4–3.7 eV and 1.9–2.5 eV, respectively, depending on the O₂ flow rate and deposition temperature. Upon excitation of Er³⁺-doped Bi₂O₃ films at 532 nm, Er³⁺ emissions peaking at 1537 and 1541 nm appeared, and the photoluminescence spectra included fine structures reflecting crystal-field splitting. Resonant excitation of Er³⁺ 4f levels and indirect excitation via the defect levels of Bi₂O₃ followed by energy transfer to Er³⁺ contributed to the emission. The films deposited at RT with Er concentrations of 2 at.% had the emission intensity of Er³⁺, but concentration quenching strongly suppressed the Er³⁺ emission because the doped Er³⁺ ions stayed inside the Bi₂O₃ crystals. At deposition temperatures above 400 °C, the concentration quenching was mitigated possibly because out-diffusion of Er³⁺ ions reduced the effective number of Er³⁺ ions in the Bi₂O₃ crystalline domains.     

Design,synthesis, structure,and stability of novel multi-principal element (Ti,Zr,Hf,W)C ceramic with a miscibility gap

Here we design a novel multi-principal element carbide system (Ti,Zr,Hf,W)C with a miscibility gap using computational tools and report on the formation of a single-phase (Ti,Zr,Hf,W)C after spark plasma sintering. The (Ti,Zr,Hf,W)C shows high nanohardness (32.7 GPa) and fracture toughness (5 MPa·m^1/2). Aging studies at 1350 °C for 100 h show that the single-phase carbide solid solution is quite stable even though this temperature is within the predicted miscibility gap of the system. Detailed electron microscopy characterization shows that phase separation has initiated with minor decomposition after aging by forming rock-salt (Ti,W)C- and (Zr,Hf)C-rich phases as well as hexagonal WC precipitates. We show that the (Ti,W)C- and (Zr,Hf)C-rich phases form a lamellar structure upon aging and the interlamellar spacing is considerably coarser than what has been previously found for the binary (Ti,Zr)C system. The decomposition kinetics, on the other hand, is sluggish due to the reduced driving force for phase decomposition.     

Deciphering the Origins of P1-Induced Power Losses in Cu(Inx,Ga1–x)Se2 (CIGS) Modules Through Hyperspectral Luminescence

In this report, we show that hyperspectral high-resolution photoluminescence mapping is a powerful tool for the selection and optimization of the laser ablation processes used for the patterning interconnections of subcells on Cu(In_x,Ga_1−x)Se₂ (CIGS) modules. In this way, we show that in-depth monitoring of material degradation in the vicinity of the ablation region and the identification of the underlying mechanisms can be accomplished. Specifically, by analyzing the standard P1 patterning line ablated before the CIGS deposition, we reveal an anomalous emission-quenching effect that follows the edge of the molybdenum groove underneath. We further rationalize the origins of this effect by comparing the topography of the P1 edge through a scanning electron microscope (SEM) cross-section, where a reduction of the photoemission cannot be explained by a thickness variation. We also investigate the laser-induced damage on P1 patterning lines performed after the deposition of CIGS. We then document, for the first time, the existence of a short-range damaged area, which is independent of the application of an optical aperture on the laser path. Our findings pave the way for a better understanding of P1-induced power losses and introduce new insights into the improvement of current strategies for industry-relevant module interconnection schemes.     

Influence of Ti ions valence states on the optical and magnetic properties of GdCr1-xTixO3 (0≤x≤0.05)

The vacancy defects, optical and magnetic properties of GdCr_1-xTi_xO₃ (0≤x ≤ 0.05) polycrystalline samples were investigated in this research. The crystal structural analyses show that the orthorhombic perovskite structure exists in all the samples. The positron annihilation spectra reveal that the vacancy defects and local electron density vary with the change of Ti ions valence states. The magnetic measurements show that the antiferromagnetic transition is shifted to lower temperature with the replacement of Ti ions in Cr sites, and the value of spin reorientation caused by the exchange interaction between Gd³⁺ ion and Cr³⁺ ion can be influenced by the change of Ti ions valence states, which rises from x = 0 to 0.04 and then decreases at x = 0.05 sample. Simultaneously, the optical band gap decreases from 2.7 eV to 0.8 eV with the introduction of Ti ions into the lattice, the result can provide a reference for improving optical activity of rare-earth chromium oxides.     

{X,Y}-Cyclacene Graphs with Next Nearest Neighbor Interactions

Eigensolutions of {X( = C,B,N),Y( = C,B,N)}-cyclacene graphs with next nearest neighbor (nnn) interactions have been obtained in analytical forms by adapting n-fold rotational symmetry followed by two-fold rotational symmetry (or a plane of symmetry). Expressions of eigensolution indicate the subspectral relationship among such cyclacenes with an even number of hexagonal rings e.g., eigenvalues of {X,Y}-di-cyclacene are found in the eigenspectra of all such even cyclacenes. Total π-electron energies and highest occupied molecular orbital and lowest unoccupied molecular orbital (HOMO–LUMO) gaps are calculated using the analytical expressions obtained and are found to vary negligibly with the variation of nnn interactions in such cyclacenes. Total π-electron energy is found to increase due to increase in restriction intensity of nnn interactions, whereas the HOMO–LUMO gap of polyacenecs having the even number of hexagonal rings and with one electron at each site (atom) decreases with increase in the restriction intensity since such systems contain degenerate half-filled HOMO (bonding or nonbonding) that are much more vulnerable for perturbations imposed through nnn interactions.     

综合传动装置胀圈密封轴槽间隙设计方法

研究一种基于理论计算与CFD仿真的胀圈密封环轴槽间隙尺寸设计方法。基于流体力学的基本方程,建立胀圈密封流场的数学模型;结合实际工况与使用要求,确定胀圈密封环与轴槽径向间隙、轴向间隙及配流衬套与旋转轴之间的间隙尺寸的约束范围;建立流场的计算流体力学模型,通过正交试验设计,分析影响胀圈密封性能的高灵敏度因素;以密封泄漏量最小为目标函数,选取最佳的轴槽间隙设计参数。结果表明,研究的3种间隙中,相比于胀圈密封环与轴槽的径向间隙、轴向间隙,配流衬套与旋转轴之间的间隙对密封环的泄漏量影响更为显著,当配流衬套与旋转轴之间的间隙增大,泄漏量也随之增大。     

柱塞副微观表面对间隙油膜压力的影响

根据分形理论中的W-M函数建立柱塞与缸体孔表面三维形貌数学模型,并利用MATLAB软件编写程序,分析分形维数对表面微观形貌的影响。将柱塞副间隙油膜沿轴向展成平面,建立油膜厚度及压力分布计算模型,采用有限体积法求解二维雷诺方程,分析粗糙度对柱塞副间隙油膜压力分布的影响。结果表明:随着分形维数的增加,柱塞表面粗糙度呈增加趋势,且表面粗糙度越大,压力峰值越大。     

Investigation on the effect of EDM process variables and environments on acoustic emission signals

Abstract

The performance of electrical discharge machining (EDM) primarily depends on the spark quality generated in the inter-electrode gap (IEG) between the tool and workpiece. A method for obtaining accurate information about the spark gap is required to effectively monitor the EDM process. The rise and fall of thermal energy in the discharge zone at a rapid rate during the dielectric breakdown produces high-pressure shock waves. This work explores the suitability of using acoustic emission (AE) generated from these shock waves and the elastic AE waves released on the workpiece due to the induced stress to monitor the performance and spark gap in EDM. The information content of the AE signals acquired at various machining conditions was extracted using AE RMS, spectral energy and peak amplitude. These features were able to well discriminate the machining condition, tool material, workpiece material, flushing pressure, current density, the initial surface roughness of the tool. Additionally, the AE signal features had a good and consistent correlation with the performance parameters, including material removal rate, surface roughness (Ra and Rq) and tool wear. The findings lay the groundwork to develop an effective, non-intrusive in-situ AE-monitoring system for performance and IEG condition in EDM.