Efficiency improvement of CIGS solar cells using RF sputtered TCO/Ag/TCO thin-film as prospective buffer layer

In this paper, TCO (Transparent Conductive Oxide) incorporating ultrathin Ag intermediate film is proposed as a new buffer layer to enhance the efficiency of CIGS thin-film solar cells (TFSCs). In this regard, versatile multilayer thin-films based on ZnO/Ag/ZnO and ITO/Ag/ITO structures were deposited on glass using RF magnetron sputtering technique to determine the optoelectronic parameters of the multilayer structures. The elaborated samples were then characterized using SEM, EDS, XRD, and UV–Visible absorption spectroscopy techniques to investigate the structure morphological, optical, and electronic properties. The deposited multilayer thin-films showed amorphous-like structure and exhibited a broadband absorbance over the visible and even NIR spectrum ranges, indicating its potential application as alternative buffer layers for thin-film solar cells. In this context, TCO/Ag/TCO/CIGS solar cells have been numerically investigated using the deposited multilayer optoelectronic properties. It was revealed that the estimated efficiency of the ZnO/Ag/ZnO/CIGS-based solar cell could reach 18.5% with an open circuit voltage of 0.7 V and a short-circuit current density of 34.8 mA/cm². The performances exhibited by the investigated solar cell demonstrated that ZnO/Ag/ZnO multilayer can be used as an alternative to the conventional CdS buffer layer for developing high-performance non-toxic CIGS solar cells.     

Effect of the thicknesses of the Al2SiO5 ion conductor on the opto-electrical properties for all-solid electrochromic devices

In this study, an all-solid-state electrochromic device (ECD) with the structure of ITO/WO₃/Al₂SiO₅/NiO_x/ITO was prepared, and the effect of the Al₂SiO₅ solid electrolyte thicknesses on the opto-electrical performance was investigated. The microstructure and surface morphology were characterized using XRD, SEM and AFM, and the surface morphology and degree of surface looseness demonstrate a significant influence on the opto-electrical properties of ECDs. The charge transfer dynamics at the solid-solid interface were characterized using EIS to obtain an ionic conductivity of 4.637 × 10^-8 S/cm. CV, CA and UV–Visible spectra were employed to record the in situ electrochemical and optical properties. The results revealed that the highest optical modulation was 44.58%, the coloring and bleaching times were 14.8 s and 3.7 s, and the highest coloring efficiency was 98.17 cm²/C, which indicates that excellent opto-electrical properties were obtained. When the thickness increases, the degree of surface dense morphology transforms, and the loose morphology is more favorable for ion conductivity, which improves the opto-electrical properties. The results in this study provide insights into the understanding of Al³⁺-based all-solid-state ECDs, which promote the exploration of new types of Al³⁺ ionic conductors for all-solid-state ECDs.     

Recrystallization behavior,oxygen vacancy and photoluminescence performance of sputter-deposited Ga2O3 films via high-vacuum in situ annealing

Ga₂O₃ films were deposited on Si substrates through radio-frequency magnetron sputtering at room temperature and were annealed in situ in a high-vacuum environment. The as-deposited Ga₂O₃ film exhibited an island-like surface morphology and had an amorphous microstructure, with a few nanocrystalline grains embedded in it. After high-temperature in situ annealing, the films recrystallized and exhibited coalesced surfaces. Because of the thermally driven diffusion of Ga, the interfacial layer between Si and Ga₂O₃ was composed of SiGaO_x. Compared with ex situ annealing in air, in situ annealing in high vacuum is more advantageous because it enhances surface mobility and improves the crystallinity of the Ga₂O₃ films. The higher oxygen vacancy concentration of in situ annealed films revealed that oxygen atoms were easily released from the Ga₂O₃ lattice during high-vacuum annealing. Photoluminescence (PL) spectra exhibited four emission peaks centered in ultraviolet, blue, and green regions, and the peak intensities were significantly enhanced by thermal annealing at >600 °C. This work elucidates the effect of the in situ annealing treatment on the recrystallization behavior, interfacial microstructure, oxygen vacancy concentration, and PL performance of the Ga₂O₃ films, making it significant and instructional for the further development of Ga₂O₃-based devices.     

PdAg/alumina membranes prepared by high power impulse magnetron sputtering for hydrogen separation

The development of hydrogen purification membranes that meet market demands such as high purity, dynamic hydrogen production even at small scale, and reduced costs is still an open question. With this view, the present study aims at developing, for the first time, a method based on high power impulse magnetron sputtering for the deposition of Pd77Ag23 (wt%) films onto porous alumina substrates to achieve composite membranes with high hydrogen permeability and stability. This technique allows the deposition of films also on complex geometries and can be easily scaled up, thus making this technology a potential candidate for preparing high performing membranes. Membranes made by stable and porous alumina supports and metallic, dense and crystalline Pd₇₇Ag₂₃ layers, from 3.5 μm to 17 μm thick, have been prepared and tested. The membranes showed good hydrogen permeability values, showing flux values up to a maximum of 0.62 mol_H2 m^?2 s^?1 at 450 °C and ΔP of 300 kPa. The resistance to hydrogen embrittlement and the chemical inertness to syngas were also demonstrated.     

A cathode support structure for use in a magnetron oscillator experiment

A low temperature co-fired ceramic (LTCC) material system has been used to develop a protype field emission cathode structure for use in an experimental magnetron oscillator. The structure is designed for used with 30 gated field emission array (GFEA) die electrically connected through silver metal traces and electrical vias. To approximate a cylinder, the cathode structure (48 mm long and 13.7 mm in diameter) is comprised of 10 faceted plates which cover the GFEA dies. Slits in the facet plates allow electron injection. The GFEA die (3 mm × 8 mm) are placed in axial columns of 3 and spaced azimuthally around a cylindrical support structure in a staggered configuration resulting in 10 azimuthal locations. LTCC manufacturing techniques were developed in order to fabricate the newly designed cathode with seven layers wrapped to form the cylinder with electrical traces and vias. Two different cathode wrapping techniques and two different via filling techniques were studied and compared. Two different facet plate manufacturing techniques were studied. Finally, four different support stand configurations for firing the cylindrical structure were also compared with a square post stand having the best circularity and linearity measurements of the fired structure.     

Hydrogen gas sensing properties of WO3 sputter-deposited thin films enhanced by on-top deposited CuO nanoclusters

Magnetron-based gas aggregation cluster source (GAS) was used to prepare high-purity CuO (cupric oxide) nanoclusters on top of sputter-deposited thin film of tungsten trioxide (WO₃). The material was assembled as a conductometric hydrogen gas sensor and its response was tested and evaluated. It is demonstrated that addition of CuO clusters noticeably enhances the sensitivity of the pure WO₃ thin film. With an increasing amount of CuO clusters the sensitivity of CuO/WO₃ system rises further. When CuO clusters form a sufficiently thick and compact layer, the resistance response is reversed. Based on the sensorial behavior, conventional and near-ambient pressure X-Ray photoemission spectroscopies, and resistivity measurements, we propose that the sensing mechanism is based on the formation of nano-sized p-n junctions in between p-type CuO and n-type WO₃. The advantages of the GAS technique for preparing sensorial and/or catalytically active materials are emphasized.     

基于离子束溅射Ta2O5薄膜的紫外吸收膜技术

为获得高性能紫外激光薄膜元件,急需研制紫外高反射吸收薄膜,实现吸收损耗的精确测量。本文采用离子束溅射技术,通过调控氧气流量实现了具有不同吸收的Ta_2O_5薄膜的制备。以Ta_2O_5薄膜作为高折射率材料,设计了355nm的紫外高反射吸收薄膜。采用离子束溅射沉积技术,在熔融石英基底上制备了355nm的吸收薄膜,对于A=5%的紫外吸收光谱,在355nm的透射率、反射率和吸收率分别为0.1%,95.0%和4.9%;对于A=12%的紫外吸收光谱,在355nm的透射率、反射率和吸收率分别为0.1%,87.4%和12.5%。实验结果表明,采用离子束溅射沉积技术,可以实现不同吸收率的355nm高反射吸收薄膜的制备,对于基于光热偏转测量技术的紫外光学薄膜弱吸收测量仪的定标具有重要的意义。     

Morphology-controlled fabrication of nanostructured WO3 thin films by magnetron sputtering with glancing angle deposition for enhanced efficiency photo-electrochemical water splitting

Herein, the tungsten trioxide (WO₃) nanostructure thin films with different morphologies are firstly fabricated by magnetron sputtering with glancing angle deposition technique (MS-GLAD), followed by the post annealed treatment process in air ambient for 2 h. It is demonstrated that the geometry of MS-GLAD setup, mainly substrate position, played a crucial role in determining the morphology, crystallinity, optical transmittance, and photo-electrochemical (PEC) performance of the WO₃ nanostructured thin film. With the different substrate positions in the MS-GLAD system, the WO₃ nanorod film layer could be precisely changed to combine an underlying dense layer with a nanorod layer and then nanocolumnar film. Moreover, the prepared samples' chemical composition and work function are studied by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS), respectively. The combining WO₃ nanostructure produced high PEC efficiency compared to the single layer of the WO₃ nanorods sample and the dense WO₃ thin film sample. Thus, morphology-controlled nanostructure film based on the MS-GLAD technique in our study provides a simple approach to enhance the photo-anode for PEC water splitting application.     

Optical and electrical properties of ITO film on flexible fluorphlogopite substrate

Indium Tin Oxide (ITO) films were prepared, at room temperature, on a fluorphlogopite substrate using magnetron sputtering technology. At various temperatures of 500 °C, 600 °C, 700 °C, 800 °C, and 900 °C, the samples were (had) annealed for 2 h (a 2-h duration). The results showed improvement in the crystalline performance of ITO film at selected annealing temperatures, with a significant reduction in resistivity at 800 °C. The lowest resistivity is 4.08 × 10^?4 Ω-cm, which is nearly an order of magnitude lower than the unannealed sample. All samples have an average light transmittance above 85% in the visible light range (400–800 nm), and with increasing annealing temperature, the average light transmittance tends to decrease. Besides, at the sensitive wavelength of 550 nm, the light transmittance is as high as 93.74%. The sheet resistance testing of the sample was through the number of bending times, which revealed that with the increase of the number of bending, the sheet resistance increases. However, after 1200 bending times, the change rate of the sheet resistance remains below 5%. Thus, the ITO film prepared on the flexible fluorphlogopite substrate revealed excellent optical and electrical properties, good flexibility, and improved stability after high-temperature annealing, which guarantees successful application in flexible electronic devices.     

Controlled growth of nanocrystalline aluminum nitride films for full color range

Color films are widely used for visual effect as well as for their functional properties. To date, however, synthesizing thin films with desired color remains challenging. In this work, AlN color films are deposited on Si wafers by precise control of the deposition time for different thickness during reactive magnetron sputtering from an Al target in Ar/N₂ atmosphere. The thickness, morphology, structure, composition and color index are carefully examined by field emission scanning electron microscopy, atomic force microscopy, grazing incidence X-ray diffraction, X-ray photoelectron spectrometry and colorimeter, respectively. As the film thickness changes from 57 nm to 165 nm, the film exhibits purple, indigo, blue, green, yellow, orange and red in color. These colors repeat in the same order when the thickness goes over 165 nm. Once the thickness exceeds 467 nm, overlapping of colors takes place. The mechanisms are elucidated.