Morphological study of thin films: Simulation and experimental insights using horizontal visibility graph

We studied the morphological nature of various thin films such as silicon carbide (SiC), diamond (C), germanium (Ge), and gallium nitride (GaN) on silicon substrate Si(100) using the pulsed laser deposition (PLD) method and Monte Carlo simulation. We, for the first time, systematically employed the visibility algorithm graph to meticulously study the morphological features of various PLD grown thin films. These thin-film morphologies are investigated using random distribution, Gaussian distribution, patterned heights, etc. The nature of the interfacial height of individual surfaces is examined by a horizontal visibility graph (HVG). It demonstrates that the continuous interfacial height of the silicon carbide, diamond, germanium, and gallium nitride films are attributed to random distribution and Gaussian distribution in thin films. However, discrete peaks are obtained in the brush and step-like morphology of germanium thin films. Further, we have experimentally verified the morphological nature of simulated silicon carbide, diamond, germanium, and gallium nitride thin films were grown on Si(100) substrate by pulsed laser deposition (PLD) at elevated temperature. Various characterization techniques have been used to study the morphological, and electrical properties which confirmed the different nature of the deposited films on the Silicon substrate. Decent hysteresis behavior has been confirmed by current-voltage (IV) measurement in all the four deposited films. The highest current has been measured for GaN at ～60 nA and the lowest current in SiC at ～30 nA level which is quite low comparing with the expected signal level (μA). The HVG technique is suitable to understand surface features of thin films which are substantially advantageous for the energy devices, detectors, optoelectronic devices operating at high temperatures.     

大采高综放工作面强动压端头顶板控制技术

为了解决大采高综放工作面回风侧端头顶板控制问题,针对马道头矿8211工作面的地质情况,通过对回风顺槽超前注浆加固,提高超前支护范围和支护强度,并对回风侧端头三角区煤壁和顶板进行化学浆加固的技术方案,有效控制了顺槽超前区围岩变形和工作面回风侧端头三角区煤壁片帮,保证了工作面端头区顶板安全。     

北斗三星无源定位技术

介绍了北斗双星定位系统的特点、功能、系统组成和工作原理,说明了北斗有源定位方式在应用方面的局限性。针对北斗有源定位方式不能无线电静默,和人们对具有无线电隐蔽性的卫星定位的需求,详细介绍一种北斗三星无源定位技术:包括工作原理、实现方法、定位精度分析和目前达到的定位精度。阐述了北斗三星无源定位技术的优点和应用形势。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Electrical and growth characteristics of Au/Al0.15Ga0.85N:Si structures with various Si incorporations

We have investigated the growth characteristics of n-Al_0.15Ga_0.85N:Si/GaN and the electronic properties of Au/n-Al_0.15Ga_0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al_0.15Ga_0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al_0.15Ga_0.85N epilayer, which was grown without any intentional flow of SiH₄. However, many cracks are observed in the n-Al_0.15Ga_0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al_0.15Ga_0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al_0.15Ga_0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling components and thermionic emission influence the current transport at the Au/n-Al_0.15Ga_0.85N:Si barrier when Si incorporation becomes higher.     

板栅模具设计中的几个问题

通过对板栅模具设计中遇到的几个实际问题的分析提出处理意见 ,从而达到科学合理地设计板栅模具。     

New developments in CdTe and CdZnTe detectors for X and γ-ray applications

There has been considerable recent progress in II-VI semiconductor material and in methods for improving performance of the associated radiation detectors. New high resistivity CdZnTe material, new contact technologies, new detector structures, new electronic correction methods have opened the field of nuclear and x-ray imaging for industrial and medical applications. The purpose of this paper is to review new developments in several of these fields. In addition, we will present some recent results at LETI concerning first the CdTe 2-D imaging system (20 × 30 mm² with 400 × 600 pixels) for dental radiology and second the CdZnTe fast pulse correction method applied to a 5 × 5 × 5 mm³ CdZnTe detector (energy resolution = 5% for detection efficiency of 85% at 122 keV) for medical imaging.     

热镀钢丝膜层的冷凝计算

分析了热镀钢丝自液池引出过程中的热传导，得出了温度分布的解析解，从而计算钢丝表面膜层达到凝固温度时的提抽高度，为结构设计及确定冷却装置的合理位置提供依据。     

回顶法灌注混凝土浆成桩工艺

探讨了回顶法灌注混凝土浆的成桩工艺，分析了影响混凝土浆灌注质量的主要因素，并给出了相应的技术参数和措施。     

定向爆破拆除煤矿主井井塔

文章论述了井塔拆除爆破中，把框架承重立柱的裸露钢筋骨架失稳看作为压杆失稳以及井塔在倾斜撞地时下部不解体破坏的估算。