基于紧耦合结构的宽带基站天线设计

随着5G移动通信频段的公布,传统基站天线已不足以覆盖其工作频段。文章以紧耦合阵列天线理论为基础,提出了一种基于紧耦合结构的交叉偶极子宽带基站天线。该天线由两对正交的领结状偶极子天线构成,通过两对交叉偶极子之间的耦合效应,有效地展宽了天线的阻抗带宽。同时,通过在天线和金属反射板之间加载电阻型频率选择表面,吸收由反射板引入的谐振反射波,改善天线高频端辐射性能。仿真及测试结果表明:该天线在1.7-3.6 GHz 频率范围内,可以满足基站天线的设计指标,两端口驻波比均小于1.5,两端口之间隔离度大于55 dB,半功率波束宽度满足65°±5°范围,且整个频段内增益均大于8.5 dBi。     

对称消声器传递损失测量及误差修正

为了提高对称消声器传递损失的测量效率，基于声学理论分析，提出了一种单负载法传递损失计算模型。针对反射系数较大的吸声末端，导致该方法在实际测量中存在较大误差的问题，推导出了一种能够消除测试管道末端反射声波在上、下游形成多次反射的修正公式。通过自制阻抗管进行试验测试，结果表明：在末端声学负载吸声性能良好的情况下，单负载法传递损失计算模型能够精确计算出对称消声器的传递损失；修正公式能够有效地消除末端负载所引起的反射波对传递损失计算的影响，降低对末端声学负载吸声性能的要求，保证单负载传递损失计算模型的适用性。     

Resistive switching characteristics of ZnO–graphene quantum dots and their use as an active component of an organic memory cell with one diode-one resistor architecture

We investigated the resistive switching characteristics of a polystyrene:ZnO–graphene quantum dots system and its potential application in a one diode-one resistor architecture of an organic memory cell. The log–log I–V plot and the temperature-variable I–V measurements revealed that the switching mechanism in a low-current state is closely related to thermally activated transport. The turn-on process was induced by a space-charge-limited current mechanism resulted from the ZnO–graphene quantum dots acting as charge trap sites, and charge transfer through filamentary path. The memory device with a diode presented a ∼10³ I_ON/I_OFF ratio, stable endurance cycles (10² cycles) and retention times (10⁴ s), and uniform cell-to-cell switching. The one diode-one resistor architecture can effectively reduce cross-talk issue and realize a cross bar array as large as ∼3 kbit in the readout margin estimation. Furthermore, a specific word was encoded using the standard ASCII character code.     

改善FPGA互连阻性短路的测试能力

通过HSPICE模拟和理论分析研究了FPGA互连中的阻性短路缺陷行为.结果表明,阻性短路产生了时序故障,小电阻缺陷甚至产生了布尔故障.对于大电阻缺陷,当被测通路进行v-to-v转换,且引起短路故障的另一条通路保持v值时,最好检测方式发生.另外,使用静态分析可以很容易检测到小电阻缺陷.在最好检测方式下,评估了电源电压和温度对测试结果的影响.结果表明低电压有助于改善测试,短路材料有正温度系数时,低温测试较好,反之高温测试较好.     

黄土构造节理型地裂缝的地球物理勘探

采用地球物理勘探中的地震绕射波方法、高密度电法和地质雷达3种方法对黄土构造节理型地裂缝进行了探测尝试。结果表明,这些手段对探测黄土构造节理型地裂缝是有效的,地震绕射波方法可给出地裂缝的位置、深度等参数;高密度电法方法不仅可以给出其位置,还可得到其宽度参数;而地质雷达的探测结果可给出近地表数m内地裂缝(盲沟)的高精度图像,更适合探测隐伏地裂缝。     

高转速弹丸姿态解算方法研究

针对传统利用三轴磁阻传感器测量姿态角的解算方法计算量大这一问题,根据常规高转速弹丸在飞行过程中偏转角变化小这一特点,提出了一种基于偏转角的计算方法,计算结果既保证了姿态角的解算精度,又减少了计算量,表明了此解算方法的可行性。     

360-μW 4.1-dB NF CMOS MedRadio receiver RF front-end with current-reuse Q-boosted resistive feedback LNA for biomedical IoT applications

In this paper, a low-power low-noise complementary metal-oxide semiconductor (CMOS) receiver RF front-end (RFFE) that employs a current-reuse Q-boosted resistive feedback low-noise amplifier (RFLNA) is proposed for 401 to 406 MHz medical device radio-communication service band IoT applications. By employing a series RLC input matching network, the proposed RFLNA has the advantages of both the conventional RFLNA and the inductively degenerated common-source LNA without using large on-chip spiral inductors at the sources of the main transistors. The proposed active mixer utilizes a current-reuse transconductor, in which a p-channel metal-oxide semiconductor (PMOS) transistor performs a current-bleeding function to reduce direct current (DC) and flicker noise in the switching stage of the active mixer. The proposed receiver RFFE is implemented in a 65-nm CMOS process and achieves a voltage gain of 30.9 dB, noise figure of 4.1 dB, S11 of less than −10 dB, and IIP3 of −22.9 dBm. It operates at a supply voltage of 1 V with bias currents of 360 μA. The active die area is 0.4 mm × 0.35 mm.     

存在气流时消声器传声损失的数值计算

以轴对称式单扩张腔消声器为例,在推导存在气流时消声器传声损失计算模型的基础上,利用有限元法、计算流体力学方法和计算气动声学方法,对其传声损失进行了数值计算,探讨了声源、气流速度和插入管长度的影响,并通过与试验对比验证了模型和计算方法的正确性.研究表明:传声损失同时受到声源和气流的耦合作用,且随流速升高下降明显,高速气流是引起消声器消声性能下降的主要原因.考虑噪声源的频率特征并适当增加插入管长度在一定程度上可以提高消声器的消声性能.     

环形配电网的分频调节阻性有源电力滤波器位置策略

通过理论分析环形配电网的谐波放大原理,对比安装在线路中点且阻抗匹配的阻性有源电力滤波器(RAPF)和对称安装在不同位置的分频调节RAPF的抑制效果,提出了一种适用于环形配电网的分频调节RAPF的位置策略。若线路长度小于谐波波长的1/2,靠近线路中点的对称位置为最优安装位置;若线路长度大于谐波波长的1/2,距谐波源1/4波长的对称位置为最优安装位置。与安装在线路中点且阻抗匹配的RAPF相比,安装在最优位置的分频调节RAPF,当其电导增益≥匹配的电导时,均能有效地衰减谐波,获得更好的抑制效果;且电导增益越大,谐波抑制效果越好。同时,该方案对线路参数的改变具有更好的适应性。仿真和实验结果验证了该方案的有效性。