新型氟碳表面活性剂在灭火剂中的应用研究

氟碳表面活性剂因其高表面活性、高耐热稳定性、高化学稳定性以及带有氟元素的烃基同时具有憎水性和憎油性的特点在消防灭火领域广泛应用。对表面活性剂的结构、分类、特性、合成方法、在消防领域应用方面进行了系统阐述,最后进行了展望,以期对未来氟碳表面活性剂的研究有所帮助。     

Plasma polymer films rf sputtered from PTFE under various argon pressures

Fluorocarbon plasma polymer films were prepared by radio-frequency (rf) sputtering of polytetrafluoroethylene (PTFE). Their wettability decreased with the increase in pressure of argon working gas. The films deposited at 70 Pa were found to be superhydrophobic plasma polymers with a static contact angle 146° for water. Sputtered fluorocarbon plasma polymer films were characterized by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and infrared (IR) spectroscopy. The paper shows that the surface composition and chemical structure of the films vary with altering the argon gas pressure.     

耐温表面活性剂在油藏开发中的研究进展

表面活性剂驱是三次采油中稳产增产的重要手段,随着高温油藏研究开发的不断深入,耐高温表面活性剂具有更加重要的研究价值。该文根据深层油藏温度高的特点和中国油藏开发现状,在研究国内外文献资料的基础上,将具有耐高温性能的表面活性剂按阴-非离子型(Anionic-nonionic)、两性型(Amphoteric)、双子型(Gemini)和氟碳型(Fluorocarbon)分类。通过对4类表面活性剂的比较,讨论了基团、分子结构等因素对表面活性剂耐温性的影响,指出可生物降解表面活性剂是耐温表面活性剂继续发展的重要方向,同时对双子表面活性剂的合成及氟碳表面活性剂的应用提出了建议。     

Reactive-ion-etching (RIE) process in CF4 plasma as a method of fluorine implantation

We have investigated the concentration of fluorine in a newly formed film, which is located on the etched surface during modification of thermal silicon dioxide layer in reactive-ion-etching (RIE) system in CF₄ plasma. We try to find the correlation between parameters of the RIE process, depth and concentration of implanted fluorine ions, and finally, the thermal stability of fluorine ions incorporated into etched layer.During the RIE of silicon dioxide in fluorine plasma, on the etched surface a layer containing fluorine atoms is formed. This layer is very thin (about 1.5 nm) and has high concentration of fluorine ions. This concentration can be changed with r.f. power, CF₄ gas pressure and CF₄ flow. The suitable selection of etching parameters makes inspection of concentration and of the depth of fluorine ions incorporated into silicon possible, during the etching process. Unfortunately, ultra-shallow junction formed in this way does not show resistance to high temperature. So it is recommended only for low-budget technologies.     

Hydrotrope-Induced Enhancement of Room Temperature Surface Activity for High Krafft Point Fluorinated Surfactants

Potassium perfluorooctane sulfonate (KPFOS) and sodium perfluorooctane sulfonate (NaPFOS) exhibit poor surface activities in aqueous solution at room temperature because of their high Krafft points. In this work, we attempted to increase the solubility of KPFOS and NaPFOS and consequently improve their surface activities at room temperature with sodium p‐methylbenzene sulfonate (BS) and urea, which are typical hydrotropes in industrial applications. The effects of BS and urea on the surface tension of the aqueous solutions of KPFOS and NaPFOS were investigated at 25 °C. When the hydrotropes were added, the effectiveness of KPFOS and NaPFOS in surface tension reduction was greatly enhanced and KPFOS showed higher efficiency in surface tension reduction than NaPFOS. On the other hand, BS had much stronger ability than urea to reduce the surface tension of KPFOS and NaPFOS in water. In particular, with the assistance of BS the minimum surface tension of KPFOS approached 19 mN/m at 25 °C. It was worth noting that in the presence of BS, the surface tension of an apparently “saturated” solution (i.e., with coexisting surfactant solid) continuously decreased with increasing surfactant concentration. This behavior was ascribed to enrichment of branched PFOS isomers in aqueous phase with the assistance of BS, as evidenced by high‐resolution ¹⁹F NMR. Hydrotropes were able to recover the inherent character of KPFOS and NaPFOS as highly surface‐active fluorinated surfactants by increasing the solubility of branched isomers. This is an easy way to enhance the effectiveness in surface tension reduction at room temperature for fluorinated surfactants with high Krafft points.     

Kynar—500涂装工艺与涂层性能研究

介绍了Kynar－500涂料的涂装工艺，并对涂层的性能作了试验与分析。     

Shell powder as a novel bio-filler for thermal insulation coatings

The feasibility of employing shell powder as a novel bio-filler to prepare fluorocarbon coating is demonstrated.According to the relevant Chinese standards, the thermal and mechanical properties of the shell powder-filled fluorocarbon coating were evaluated, and compared with those filled by commercial calcium carbonate. All the shell powder-filled coatings can meet the requirements stated in the relevant standards, and with decreasing the particle size of the shell powders, the performance of the thermal insulation coating is enhanced. The coating(SC3) filled by shell powders with an average particle size of 2.81 μm possesses a better thermal insulation performance than the coating(CC) filled by commercial calcium carbonate. The coating SC3 has comparable adhesive force and washing resistance with the coating CC, and in the washing resistance test, after 2000 cycles, the coating SC3 was still able to cover totally their substrates. This work demonstrates a high value-added disposal method for the aquacultural wastes.     

我国非金属浮顶的研究进展

概述了国内玻璃钢、柔性薄膜、氟碳表面膜和高分子聚合物等非金属浮顶的研究和进展情况,分析了其优缺点和需要克服的关键性技术;定性分析和比较了各类非金属浮顶和金属浮顶在一次性投资、安装工期、动火量、材料性能、抗静电性、运行状态和维护等方面的差异;指出加大资金和技术的投入,研制出实用有效的非金属浮顶符合我国的国情。     

Effect of etching on dielectric constant and surface composition of SiCOH low-k films in inductively coupled fluorocarbon plasmas

SiCOH low-k (k = 2.8) film etched in fluorocarbon (CF₄ and CHF₃) inductively coupled plasmas was characterized in this work. The surface composition and molecular structures of the low-k films after etching in the CF₄, CHF₃, CF₄/Ar, and CHF₃/Ar plasmas were characterized. A higher etch rate was observed with the CF₄ plasmas than with the CHF₃ plasmas. The etch rate of the low-k film in the CF₄ plasmas was decreased and the etch rate in the CHF₃ plasmas was increased by the Ar addition. After etching the low-k films, a decrease in the dielectric constant of up to 0.19 was observed. The thickness of the fluorocarbon (CF_x) layer and CF_x (x = 1, 2, 3)-to-carbon ratio obtained from the XPS C 1s peak increased with decreasing etch rate. The k-value was correlated with amount of Si-CH₃ and Si-O related groups determined from the Fourier transform infrared (FT-IR) spectrum. The Si-O related peaks were markedly decreased after etching in the CF₄ and CF₄/Ar plasmas. The lower k-value was attributed to the increase of the Si-CH₃/Si-O ratio after etching low-k film.