All-printed and highly stable organic resistive switching device based on graphene quantum dots and polyvinylpyrrolidone composite

We propose all printed and highly stable organic resistive switching device (ORSD) based on graphene quantum dots (G-QDs) and polyvinylpyrrolidone (PVP) composite for non-volatile memory applications. It is fabricated by sandwiching G-QDs/PVP composite between top and bottom silver (Ag) electrodes on a flexible substrate polyethylene terephthalate (PET) at ambient conditions through a cost effective and eco-friendly electro-hydrodynamic (EHD) technique. Thickness of the active layer is measured around 97 nm. The proposed ORSD is fabricated in a 3 × 3 crossbar array. It operates switching between high resistance state (HRS) and low resistance state (LRS) with OFF/ON ratio ∼14 for more than 500 endurance cycles, and retention time for more than 30 days. The switching voltage for set/reset of the devices is ±1.8 V and the bendability down to 8 mm diameter for 1000 cycles are tested. The elemental composition and surface morphology are characterized by XPS, FE-SEM, and microscope.     

Sol-Gel Preparation and Luminescence Properties of BaMgAl10O17∶Eu2+ Phosphors

The synthesis of BaMgAl10O17∶ Eu2 (BAM) phosphors using the sol-gel method and their luminescence properties were reported. The blue-light emitting BAM was synthesized using citric acid and ethylene glycol as chelating materials. Emission of blue-light was obtained from these phosphors. The luminescent intensity increases as the temperature of heat treatment is increased. This study investigated the effects of the molar ratio of ethylene glycol to citric acid (Φ value), with respect to the phase formation and luminescence properties of BAM. The variation of the Φ value resulted in the change of the sol-gel reaction mechanism and the microstructures of the resultant powders. An increase in Φ value leads to an increase in the rate of BAM phase formation. The photoluminescent intensity of the prepared phosphors increases with heating temperatures because of enhanced crystallization.     

Effects of Rare Earths on Toughness of 31Mn2SiRE Wear-Resistance Cast Steel

The toughness of 31Mn2SiRE wear-resistance cast steel were increased by means of RE compound modification and high temperature austenitizing. The results show that the microstructures can be refined, needle and network ferrite are eliminated, the dislocation density and the quantity of dislocated martensite are increased remarkably, and the shape and distribution of inclusions are improved by the addition of RE. Therefore, the mechanical properties of the modified steel can be greatly increased, especially the toughness (αK) by 44%, yield strength (σs) by 10%, and elongation (δ5) by 42%.     

井下乳化/水热催化裂解复合降黏开采稠油技术研究

实验考察了胜利孤东稠油井下催化水热裂解和乳化/催化水热裂解降黏效果。所用催化剂为水溶性铁镍钒体系,Fe3+∶Ni2+∶VO4+=5∶1∶1,100 g稠油与30 g 0.5%催化剂水溶液在240℃反应24小时。原始黏度(50℃)11.0和8.36 Pa.s的两种稠油裂解并静置除水后,黏度降低76.2%和75.6%,室温放置60天后降黏率下降小于3个百分点,气相色谱显示裂解后轻组分明显增加,红外光谱显示稠油组分发生脱羧反应且芳环数减少。讨论了稠油催化水热裂解反应机理。所用化学助剂JN-A在油水中均可溶,耐温达250℃,耐矿化度达50 g/L,其水溶液以30∶100的质量比与稠油混合时形成低黏度的O/W乳状液。当水相含1.0%JN-A和0.5%催化剂时,两种稠油水热裂解后的反应混合物为O/W乳状液,黏度仅为319和309 mPa.s,静置除水后的稠油降黏率增加到86.5%和87.3%,其中的轻组分含量进一步增加。该井下乳化/催化水热裂解复合降黏法成功地用于孤东两口蒸汽吞吐井,稠油井作业后初期采出的原油黏度由~9 Pa.s降低到1 Pa.s左右,随采油时间延长而逐渐升高,约50天后超过4Pa.s。图2表6参5。     

Effect of Stoichiometry on Properties of Rare-Earth-Based Hydrogen Storage Alloy for Nickel-Metal Hydride Secondary Battery

Effect of stoichiometry on microstructures, electrochemical properties and PCT characteristics of the alloys MI(Ni0.71Co0.15-Al0.06Mn0.08)x (MI=Lanthanum-rich Michmetal, x=4.6~5.2) have been investigated. The lattice constants a, c, and cellvolumes of non-stoichiometric alloys are bigger than those of the stoichiometric alloy. With the increasing stoichiometry x,the value of a decreases, and the value of c and cell volume increases except for those of the stoichiometric alloy; the plateaupressure of PCT curve, discharge capacity and cycling stability all increase. The alloy with x=5.2 shows the highest dischargecapacity and the best cycling stability among the studied alloys.     

用CMOS工艺实现VSR光电集成接收机的途径

介绍了10Gbit／s速率的甚短距离光传输系统VSR(Very Short Reach)中的接收机。分析了几种有希望用于VSR系统的CMOS工艺兼容的光电探测器。提出用CMOS电路实现VSR光电集成(OEIC)接收机的可能性和实现方法。     

大型连杆流线简易试验方法

介绍了一种大型连杆流线的简易试验方法及其评价原则。该方法可清晰显示流线，并适合任何尺寸和形状的锻造连杆的流线试验。     

Enhanced Photoelectrochemistry in CdS/Au Nanoparticle Bilayers

Three different configurations of Au‐nanoparticle/CdS‐nanoparticle arrays are organized on Au/quartz electrodes for enhanced photocurrent generation. In one configuration, Au‐nanoparticles are covalently linked to the electrode and the CdS‐nanoparticles are covalently linked to the bare Au‐nanoparticle assembly. The resulting photocurrent, φ = 7.5 %, is ca. 9‐fold higher than the photocurrent originating from a CdS‐nanoparticle layer that lacks the Au‐nanoparticles, φ = 0.8 %. The enhanced photocurrent in the Au/CdS nanoparticle array is attributed to effective charge separation of the electron–hole pair by the injection of conduction‐band electrons from the CdS‐ to the Au‐nanoparticles. Two other configurations involving electrostatically stabilized bipyridinium‐crosslinked Au/CdS or CdS/Au nanoparticle arrays were assembled on the Au/quartz crystal. The photocurrent quantum yields in the two systems are φ = 10 % and φ = 5 %, respectively. The photocurrents in control systems that include electrostatically bridged Au/CdS or CdS/Au nanoparticles by oligocationic units that lack electron‐acceptor units are substantially lower than the values observed in the analogous bipyridinium‐bridged systems. The enhanced photocurrents in the bipyridinium‐crosslinked systems is attributed to the stepwise electron transfer of conduction‐band electrons to the Au‐nanoparticles by the bipyridinium relay bridge, a process that stabilizes the electron–hole pair against recombination and leads to effective charge separation.